Publications


  • Solid State Electronic Devices, 5th Ed. (2000), 6th Ed. (2005), 7th Ed. (2015), Prentice-Hall by B. Streetman and S. Banerjee
  • Effect of Surface Nitridation on the Electrical Characteristics of Germanium High κ/Metal Gate Metal Oxide Semiconductor Devices, D. Q. Kelly, J. J.-H. Chen, S. Guha, and S. K. Banerjee. Invited Book chapter, Springer, 2007.
  • SiGe HFETs, S.Banerjee, The Silicon Heterostructure Handbook, 2005, Edited by John Cressler.
  • High-k Gate Dielectrics, Y. Fan. S. Mudanai, L. Register and S. Banerjee, 2003
  • Device Miniaturization and Simulation, S. Banerjee and B. Streetman in ULSI Devices, John Wiley, 2000 (C.Chang and S.Sze editors)
  • Dopant Diffusion, S.Banerjee in Handbook of Semiconductor Manufacturing Technology, Marcel Dekker, 2000, 2006 (Y.Nishi, B.Doering and J.Kilby editors).
  • Silicon-germanium Devices, S.Banerjee, Elsevier, 2001.
  • Novel 3D CMOS, S.Dey and S.Banerjee, Solid State Electronics Trends, 2009
  • Ultra-low-power pseudospintronics devices via exciton condensation in coupled two-dimensional material systems,X. Mou, L. F. Register and S. K. Banerjee, in Nanoscale Materials and Devices for Electronics, Photonics and Solar Energy, Ed. Stephen Goodnick, Anatoli Korkin and Robert Nemanich, Springer, 2015
  • Bilayer pseudoSpin Field Effect Transistor (BiSFET), D. Reddy, L. F. Register and S. K. Banerjee, in "Beyond CMOS Logic Switches," T.-J. King and K. Kuhn, Eds., Cambridge: Cambridge Univ. Press, 2015.
  • Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor, Amritesh Rai, Hema C. P. Movva, Anupam Roy, Deepyanti Taneja, Sayema Chowdhury, and Sanjay K. Banerjee, in "Integration of 2D Materials for Electronics Applications", Filippo Giannazzo, Samuel Lara Avila, Jens Eriksson, and Sushant Sonde (Eds.), MDPI Books, 2019
  • Devices and defects in two-dimensional materials: outlook and perspectives, A Rai, A Roy, A Valsaraj, S Chowdhury, D Taneja, Y Wang, LF Register, SK Banerjee, in "Two-Dimensional Materials", 339-401 (Invited Book Chapter) 2021.

Refer to Prof. Banerjee's CV for a full list dating back to 1981.



•  R.Xue, …S.Chowdhury, SK. Banerjee, D.Forrest, H.Deng, D.Snoke. Plasmons in 2D Materials. APS March Meeting , 4 (11), 2023.
•  N. Navlakha, P. Jadaun, L.F. Register, and S.K. Banerjee. Band Alignment in BP/MoS2 heterostructure: Role of Charge Redistribution, Electric Field, Biaxial Strain, and Layer Engineering. J. Elec. Materials , 2023. [ link ]
•  W.Chi and S.K. Banerjee. Comparison and integration of CuInGaSe and perovskite solar cells. JOURNAL OF ENERGY CHEMISTRY ,78, pp.463-475, 2023. [ link ]
•  S. Yang, M. Dahan, S.Teja, C.Luth, SK. Banerjee, M.Kim, A.Roessler, E.Yalon, D. Akinwande. Reconfigurable Low-Voltage Hexagonal Boron Nitride Nonvolatile Switches for Millimeter-Wave Wireless Communications NANO LETTERS , pp.1152-1158, Jan. 2023. [ link ]
•  W.Chi, SK. Banerjee, K.Jayawardena, R.Silva and S.Seok. Perovskite/Silicon Tandem Solar Cells: Choice of Bottom Devices and Recombination Layers. ACS Energy Lett. , 8, 1535−1550, 2023. [ link ]
•  Matthew N. Disiena, Christopher Luth, S. S. Teja Nibhanupudi, Jatin V. Singh, A. Ansh, Sarmita Majumder, and Sanjay K. Banerjee. Proximity effects of 2D antiferromagnets on superconductivity in exfoliated niobium disulfid. J. Appl. Phys , 134(2), July 2023. [ link ]
•  Moonkyu Song, Sangheon Lee, S. S. Teja Nibhanupudi, Jatin Vikram Singh, Matthew Disiena, Christopher J. Luth, Siyu Wu, Matthew J. Coupin, Jamie H. Warner, and Sanjay K. Banerjee. Self-Compliant Threshold Switching Devices with High On/Off ratio by Control of Quantized Conductance in Ag Filaments. NANO LETTERS , 23(7), July 2023. [ link ]
•  Zefang Yea, Janghan Parka, Yanyao Zhangb, Xianghai Menga, Matthew Disienad, Sanjay K. Banerjeed, Jung-Fu Linb, and Yaguo Wang. Simultaneous Determination of Thermal Conductivity and Heat Capacity in Thin Films with Picosecond Transient Thermoreflectance and Picosecond Laser Flash. Nanoscale and Microscale Thermophysical Engineering 2023. [ link ]
•  Aqyan A. Bhatti, Branch T. Archer, Nupur Navlakha, Leonard F. Register,and Sanjay K. Banerjee. Semi-classical Monte Carlo study of the impact of tensile strain on the performance limits of monolayer MoS2 n-channel MOSFETs. J. Appl. Phys. 134, 204302 (2023). [ link ]


•  H. E. Darkhaneh, Z. Shamsi, M.G.R. Banda, M. Quevedo-Lopez, and S.K. Banerjee. Room-Temperature Processed Lateral Trench-Metal-Insulator-Semiconductor Schottky Barrier Diodes with Amorphous Gallium Oxide (a-Ga2O3) Thin Films on Si. physica status solidi ,2022. [ link ]
•  W. Chi, and S.K. Banerjee. Performance Improvement of Perovskite Solar Cells by Interactions between Nano‐Sized Quantum Dots and Perovskite. Advanced Functional Materials ,2022. [ link ]
•  M.H. Alam, S. Chowdhury, A. Roy, X. Wu, R. Ge, M.A. Rodder, J. Chen, Y. Lu, J.Lee, S.K. Banerjee, J. Warner, and D.Akinwande. Wafer-Scalable Single-Layer Amorphous Molybdenum Trioxide. ACS nano ,16 (3), 3756-3767, 2022. [ link ]
•  W. Chi, and S.K. Banerjee. Application of perovskite quantum dots as an absorber in perovskite solar cells. Angewandte Chemie ,134 (9), 2022. [ link ]
•  Hadi Ebrahimi-Darkhaneh, Mahsa Shekarnoush, Josefina Arellano-Jimenez, Rodolfo Rodriguez, Luigi Colombo, Manuel Quevedo-Lopez, and Sanjay K. Banerjee. High-quality crystal Mg-doped p-type Ga2O3 thin film by pulse laser deposition. J. Mat. Science , 2022. [ link ]
•  N.Navlkha, L.F.Register, and S.K. Banerjee. Emerging 2D Materials for Tunneling Field Effect Transistors. IEEE Latin American Devices Conf. , 2022. [ link ]
•  S.S. Teja Nibhanupudi, Dmitry Veksler, Anupam Roy, Matthew Coupin, Kevin C. Matthews, Jamie Warner, Gennadi Bersuker, Jaydeep P. Kulkarni and Sanjay K. Banerjee. Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devices. IEEE Dev. Res. Conf (DRC) , 2022. [ link ]
•  Sung Jin Yang, Frank Makal, Paul Peterson, Jason Alikpala, Christopher J. Luth, Sanjay K. Banerjee, Andreas Roessler, and Deji Akinwande. D-band frequency memristor switch based on monolayer boron nitride. IEEE Dev. Res. Conf (DRC) , 2022. [ link ]
•  Ryan Schalip, Anupam Roy, and Sanjay K. Banerjee. Molecular Beam Epitaxy Growth of Iron Selenide Thin Films on c-Al2O3(0001)e. Mat. Conf , 2022.
•  Sayema Chowdhury, Anupam Roy, Md Hasibul Alam, Tanmoy Pramanik, Jessica Depoy, Robert Chrostowski, Filippo Mangolini, Deji Akinwande, and Sanjay K. Banerjee. Role of Hydrogen in Suppressing Secondary Nucleation in Chemical Vapor-Deposited MoS2. ACS APPLIED ELECTRONIC MATERIALS , 4 (12) , pp.6133-6141, Dec. 2022. [ link ]
•  A.Roy, T.Pramanik, S.Chowdhury, and S.K. Banerjee. Phase-Field Modeling of Chemical Vapor-Deposited 2D MoSe2 Domains with Varying Morphology for Electronic Devices and Catalytic Applications. ACS APPLIED NANO MATERIALS , 5 (10) , pp.15488-15497, 2022. [ link ]
•  W.Chi and S.K. Banerjee. Engineering strategies for two-dimensional perovskite solar cells. TRENDS IN CHEMISTRY , 4 (11), Oct. 2022. [ link ]


•  W. Chi, and S.K. Banerjee Stability Improvement of Perovskite Solar Cells by Compositional and Interfacial Engineering. Chemistry of Materials,v.33 (2021). [ link ]
•  U. Roy, T. Pramanik, S. Roy, A. Chatterjee, L.F. Register, S.K. Banerjee Machine Learning for Statistical Modeling: The Case of Perpendicular Spin-Transfer-Torque Random Access Memory. ACM Transactions on Design Automation of Electronic Systems (TODAES),(26) (2021). [ link ]
•  S. Chowdhury, A. Roy, C. Liu, M.H. Alam, R. Ghosh, H. Chou, D. Akinwande, S.K. Banerjee Two-Step Growth of Uniform Monolayer MoS2 Nanosheets by Metal–Organic Chemical Vapor Deposition ACS Omega, (2021). [ link ]
•  M.H. Alam, S.S.T. Nibhanupudi, S.K. Banerjee, and D. Akinwande Centimeter-Scale MoS2 on Solid Electrolyte Substrate by Sulfurization of Molybdenum Thin Film IEEE 21st International Conference on Nanotechnology (NANO), 421-424, 2021 [ link ]
•  W. Chi, and S.K. Banerjee Development of perovskite solar cells by incorporating quantum dots Chemical Engineering Journal,131588, 2021 [ link ]
•  D. Koh, T.W. Hudnall, C.W. Bielawski, S.K. Banerjee, J. Brockman, M. Kuhn, and S.King X-Ray Photoemission Investigation of the Beryllium Oxide Band Alignment with Magnesium Oxide and Estimates for Other Insulating and Conducting Oxides ECS Transactions,102 (3), 127, 2021 [ link ]
•  M.H. Alam, S. Chowdhury, A. Roy, M.H. Braga, S.K. Banerjee, D. Akinwande Direct growth of MoS2 on electrolytic substrate and realization of high-mobility transistors Physical Review Materials,(5), 054003, 2021 [ link ]
•  N. Prasad, X. Wu, S.K. Banerjee, and L.F. Register Method to enhance resonant interlayer tunneling in bilayer-graphene systems Journal of Computational Electronics, 1-6, 2021. [ link ]
•  W Chi, and S.K. Banerjee Achieving Resistance against Moisture and Oxygen for Perovskite Solar Cells with High Efficiency and Stability Chemistry of Materials, 2021. [ link ]
•  R. Dey, A. Roy, L.F. Register, and S.K. Banerjee Recent progress on measurement of spin–charge interconversion in topological insulators using ferromagnetic resonance APL Materials, 9 (6), 060702, Invited, 2021. [ link ]
•  Electronics and Spintronics in 2D, UC Berkeley invited talk, Sept, 2021.
•  Electronics in Flatland, IEEE EDS invited talk, Oct., 2021.
•  Electronics and Spintronics in 2D, Indian National Academy of Sciences, invited talk, Dec, 2021.


•  Sayema Chowdhury, Anupam Roy, Sanjay K. Banerjee. Transition from 3D to 2D and fractal to compact domains of CVD Grown MoSe2. Materials Res. Society Symposium, 2020.
•  Md. Hasibul Alam, Zifan Xu, Sayema Chowdhury, Zhanzhi Jiang, Deepyanti Taneja, Sanjay K. Banerjee, Keji Lai, Maria Helena Braga and Deji Akinwande. Solid Electrolytic Substrates for High Performance TMD Transistors and Circuits. Device Research Conference, 2020.
•  Sayema Chowdhury, Anupam Roy, Chison Liu, Rudresh Ghosh, Harry Chou and Sanjay K. Banerjee. Large-Area Metal Organic Chemical Vapor Deposition Growth of Few Layer MoS2 and its Controlled Sulfurization to Monolayer MoS2. Electronics Materials Conference, June 2020.
•  Electronics in Flatland, (with Register, Tutuc, Akinwande), Vebleo Conf. on Nanomaterials, Sweden, Aug. 2020 (Invited Keynote).
•  P. Jadaun, L. F. Register, S. K. Banerjee. Design of giant spin Hall effect in transition metal oxides. Materials Research Society, Nov. 2020.
•  Priyamvada Jadaun, Leonard F Register, and Sanjay K Banerjee. Design of giant DMI and its microscopic origin in magnetic bilayers. MMM Conference, 2020.
•  Y Zhou, N Maity, A Rai, R Juneja, X Meng, A Roy, Y Zhang, X Xu, JF Lin, S.K.Banerjee, A.Singh, Y.Wang. Stacking Order Driven Optical Properties and Carrier Dynamics in ReS2. Advanced Materials,32 (22), 1908311, 2020. [ link ]
•  S Bang, S Lee, A Rai, NT Duong, I Kawk, S Wolf, CH Chung, SK Banerjee, A.Kummel, M.Jeong. Contact Engineering of Layered MoS2 via Chemically Dipping Treatments. Advanced Functional Materials, 30 (16), 2000250, 2020. [ link ]
•  S Chowdhury, A.Roy, I Bodemann, SK Banerjee. Two-Dimensional to Three-Dimensional Growth of Transition Metal Diselenides by Chemical Vapor Deposition: Interplay between Fractal, Dendritic, and Compact Morphologies. ACS Applied Materials & Interfaces, 12 (13), 15885-15892, 2020. [ link ]
•  N Prasad, T Pramanik, SK Banerjee, LF Register. Realizing both short-and long-term memory within a single magnetic tunnel junction based synapse. Journal of Applied Physics, 127 (9), 093904, 2020. [ link ]
•  A Roy, R Dey, T Pramanik, A Rai, R Schalip, S Majumder, S Guchhait, S.K.Banerjee. Structural and magnetic properties of molecular beam epitaxy grown chromium selenide thin films. Physical Review Materials, 4 (2), 025001, 2020. [ link ]
•  D Koh, T.Hudnall, C.Bielawski, SK Banerjee, J Brockman, M Kuhn, SW King. X-ray photoelectron spectroscopy investigation of the valence band offset at beryllium oxide-diamond interfaces. Diamond and Related Materials, 101, 107647, 2020. [ link ]
•  P Zhuang, W Lin, J Ahn, M Catalano, H Chou, A Roy, M Quevedo Lopez, L.Colombo, S.K.Banerjee. Nonpolar Resistive Switching of Multilayer hBN Based Memories. Advanced Electronic Materials, 6 (1), 1900979, 2020. [ link ]
•  W.Chi and S.K. Banerjee. Progress in Materials Development for the Rapid Efficiency Advancement of Perovskite Solar Cells. Small, May 2020.
•  Md Hasibul Alam, Sayema Chowdhury, Zifan Zhu, Deepyanti Taneja, Keji Lai, Sanjay K. Banerjee, Maria Helena Braga, and Deji Akinwande. Lithium-Ion Electrolytic Substrates for sub-1V High-Performance TMD Transistors and Amplifiers. Nature Communications, 2020. [ link ]
•  Priyamvada Jadaun, Leonard F Register, Sanjay K Banerjee. The microscopic origin of DMI in magnetic bilayers and prediction of giant DMI in new bilayers. Nature Partner Journal Computation, 2020. [ link ]
•  P Jadaun, LF Register, SK Banerjee. Rational design principles for giant spin Hall effect in 5d-transition metal oxides. Proceedings of the National Academy of Sciences, 117 (22), 11878-11886, 2020. [ link ]
•  Aqyan A. Bhatti, Nupur Navlakha, Dax M. Crum, Sanjay K. Banerjee, and Leonard F. Register. Quantum-Corrected Semiclassical Monte Carlo Study of Channel Scaling in Nanoscale Si, Ge, and In0.53Ga0.47As n-channel FinFETs. IEEE Nanotechnology magazine, Dec 2020. [ link ]
•  R Ge, X Wu, L Liang, SM Hus, Y Gu, E Okogbue, H Chou, J Shi, Y Zhang, Sanjay K Banerjee, Yeonwoong Jung, Jack C Lee, Deji Akinwande. A Library of Atomically Thin 2D Materials Featuring the Conductive Point Resistive Switching Phenomenon. Advanced Materials, 2007792, 2020. [ link ]
•  R Dey, LF Register, SK Banerjee. Two-dimensional transport model of spin-polarized tunneling in a topological-insulator/tunnel-barrier/ferromagnetic-metal heterostructure. Physical Review B, 102 (14), 144414, 2020. [ link ]
•  M.H. Alam, Z. Xu, S. Chowdhury, Z. Jiang, D. Taneja, S.K. Banerjee, K. Lai, and D. Akinwande Optoelectronic mixing with high-frequency graphene transistors. NATURE COMMUNICATIONS,vol 11, 3203, 2020. [ link ]
•  Jacob N. Rohan, P. Zhuang, S. S. Teja Nibhanupudi, Sanjay K. Banerjee, and Jaydeep P. Kulkarni Machine Learning Assisted Compact Modeling of Cycle-to-cycle Variations in 2-D h-BN based RRAM devices Government Microelectronic Conference (GOMACTech), March 2020


•  Kha Tran, Galan Moody, Fengcheng Wu, Xiaobo Lu, Junho Choi, Akshay Singh, Jacob Embley, André Zepeda, Marshall Campbell, Kyounghwan Kim, Amritesh Rai, Travis Autry, Daniel A Sanchez, Takashi Taniguchi, Kenji Watanabe, Nanshu Lu, Sanjay K Banerjee, Emanuel Tutuc, Li Yang, Allan H MacDonald, Kevin L Silverman, Xiaoqin Li. Moire Excitons in Van der Waals Heterostructures. APS March Meeting , 2019. [ link ]
•  W Guo, A Posadas, A Demkov, A Roy, A Rai, S Banerjee, K Olsson, XE Li. Two dimensional SrTiO3 membranes. Bulletin of the American Physical Society, 2019. [ link ]
•  Zizhuo Zhang, Himamshu C Nallan, Brennan M Coffey, Thong Q Ngo, Tanmoy Pramanik, Sanjay K Banerjee, John G Ekerdt. Atomic layer deposition of cobalt oxide on oxide substrates and low temperature reduction to form ultrathin cobalt metal films. Journal of Vacuum Science & Technology A, 37, 010903 (2019). [ link ]
•  Zheng Sun, Jonathan Beaumariage, Hema CP Movva, Sayema Chowdhury, Anupam Roy, Sanjay K Banerjee, David W Snoke. Stress-induced bandgap renormalization in atomic crystals. Solid State Communications, Vol 288, pg. 18-21, Feb. 2019. [ link ]
•  Di Wu, Wei Li, Amritesh Rai, Xiaoyu Wu, Hema CP Movva, Maruthi Nagavalli Yogeesh, Zhaodong Chu, Sanjay K Banerjee, Deji Akinwande, Keji Lai. Visualization of Local Conductance in MoS2/WSe2 Heterostructure Transistors. Nano letters, Feb. 2019. [ link ]
•  Kha Tran, Galan Moody, Fengcheng Wu, Xiaobo Lu, Junho Choi, Kyounghwan Kim, Amritesh Rai, Daniel A Sanchez, Jiamin Quan, Akshay Singh, Jacob Embley, André Zepeda, Marshall Campbell, Travis Autry, Takashi Taniguchi, Kenji Watanabe, Nanshu Lu, Sanjay K Banerjee, Kevin L Silverman, Suenne Kim, Emanuel Tutuc, Li Yang, Allan H MacDonald, Xiaoqin Li. Evidence for moiré excitons in van der Waals heterostructures. Nature, Feb. 2019. [ link ]
•  Jacob N. Rohan, Pingping Zhuang,SS Teja Nibhanupudi, Sanjay K. Banerjee, Jaydeep P. Kulkarni. Neural Network Assisted Compact Model for Accurate Characterization of Cycle-to-cycle Variations in 2-D h-BN based RRAM devices. Dev. Res. Conf., 2019.
•  Omar B. Mohammed, Leonard F. Register, and Sanjay K. Banerjee. 8. Tunnel Barrier Thickness, Interlayer Rotational Alignment, and Top Gating Effects on ReS2/hBN/ReS2 Resonant Interlayer Tunnel Field Effect Transistors. Dev Res. Conf, 2019.
•  Sayema Chowdhury, Anupam Roy and Sanjay Banerjee. Fractal Growth of WSe2, Using Chemical Vapor Deposition. Elec. Mat. Conf., 2019.
•  Anupam Roy, Tanmoy Pramanik, Rik Dey, Amritesh Rai and Sanjay Banerjee. Epitaxial Growth and Characterization of Chromium Selenide Thin¬Films on c-Al203(0001). Elec. Mat. Conf., 2019.
•  Omar B, Mohammed and Sanjay Banerjee. Two Terminal Devices Based on Two-Dimensional Materials. Elec. Mat. Conf., 2019.
•  Nitin Prasad, Tanmoy Pramanik, Sanjay K. Banerjee and Leonard F. Register. Tunable Long-Term and Short-Term Memories in a Single Magnetic Tunnel Junction Based Synapse. MMM Conf., 2019.
•  X Wu, X Mou, LF Register, SK Banerjee. Simulation of exciton condensate-mediated quantum transport in a double-monolayer transition metal dichalcogenide system. Physical Review B, 99 (3), 035113, 2019. [ link ]
•  W Lin, P Zhuang, H Chou, Y Gu, R Roberts, W Li, SK Banerjee, W Cai, D.Akinwande. Electron redistribution and energy transfer in graphene/MoS2 heterostructure. Applied Physics Letters, 114 (11), 113103, 2019. [ link ]
•  X Wu, R Ge, PA Chen, H Chou, Z Zhang, Y Zhang, S Banerjee, JC Lee, D. Akinwande. Thinnest Nonvolatile Memory Based on Monolayer h-BN. Advanced Materials, 31 (15), 1806790, 2019. [ link ]
•  JH Park, A Rai, J Hwang, C Zhang, I Kwak, SF Wolf, S Vishwanath, X Liu, SK. Banerjee, KJ. Cho, AC. Kummel. Band Structure Engineering of Layered WSe2 via One-Step Chemical Functionalization. ACS Nano, 1377545-7555, 2019. [ link ]
•  Donghyi Koh, Sanjay K Banerjee, Chris Locke, Stephen E Saddow, Justin Brockman, Markus Kuhn, Sean W King. Valence and conduction band offsets at beryllium oxide interfaces with silicon carbide and III-V nitrides. Journal of Vacuum Science & Technology B, 37, 041206 (2019). [ link ]
•  Electronics in Flatland, (with Register, Tutuc, Akinwande), Graphene Week, Helsinki, Sept. 2019. (Invited)
•  Electronics in Flatland, (with Register, Tutuc, Akinwande), American Vac. Society, Ohio, Sept. 2019. (Invited)
•  Electronics in Flatland, (with Register, Tutuc, Akinwande), Int. Workshop on Physics of Semiconductors, Kolkata, India, Dec. 2019. (Invited Plenary)
•  Nitin Prasad, Tanmoy Pramanik, Sanjay K. Banerjee and Leonard F. Register. 21. Tunable Long-Term and Short-Term Memories in a Single Magnetic Tunnel Junction Based Synapse. MMM Conf., 2019.


•  Amritesh Rai, Jun Hong Park, Chenxi Zhang, Iljo Kwak, Steven Wolf, Suresh Vishwanath, Xinyu Lin, Jacek Furdyna, Huili Grace Xing, Kyeongjae Cho, Andrew C. Kummel, and Sanjay K. Banerjee. Enhanced P-Type Behavior in 2D WSe2 via Chemical Defect Engineering. In 2018 76th Device Research Conference (DRC), August 2018. [ link ]
•  Amritesh Rai, Hema Movva, Anupam Roy, Deepyanti Taneja, Sayema Chowdhury, and Sanjay Banerjee. (Invited Feature Review) Progress in contact, doping and mobility engineering of MoS2: An atomically thin 2D semiconductor. Crystals, 8(8):316, August 2018. [ bib | DOI | http ]
•  Tanmoy Pramanik, Urmimala Roy, Priyamvada Jadaun, Leonard F Register, and Sanjay K Banerjee. Write error rates of in-plane spin-transfer-torque random access memory calculated from rare-event enhanced micromagnetic simulations. Journal of Magnetism and Magnetic Materials, 467:96--107, July 2018. [ bib | DOI | http ]
•  Rik Dey, Nitin Prasad, Leonard F Register, and Sanjay K Banerjee. Conversion of spin current into charge current in a topological insulator: Role of the interface. Physical Review B, 97(17):174406, May 2018. [ bib | DOI | http ]
•  Stefano Larentis, Hema CP Movva, Babak Fallahazad, Kyounghwan Kim, Armand Behroozi, Takashi Taniguchi, Kenji Watanabe, Sanjay K Banerjee, and Emanuel Tutuc. Large effective mass and interaction-enhanced zeeman splitting of k-valley electrons in MoSe2. Physical Review B, 97(20):201407, April 2018. [ bib | DOI | http ]
•  Rik Dey, Leonard F Register, and Sanjay K Banerjee. Modeling all-electrical detection of the inverse edelstein effect by spin-polarized tunneling in a topological-insulator/ferromagnetic-metal heterostructure. Physical Review B, 97(14):144417, April 2018. [ bib | DOI | http ]
•  Soonil Lee, Jaehyun Ahn, Leo Mathew, Rajesh Rao, Zhongjian Zhang, Jae Hyun Kim, Sanjay K Banerjee, and Edward T Yu. Highly improved passivation of c-Si surfaces using a gradient i a-Si: H layer. Journal of Applied Physics, 123(16):163101, April 2018. [ bib | DOI | http ]
•  Ke Chen, Anupam Roy, Amritesh Rai, Hema CP Movva, Xianghai Meng, Feng He, Sanjay K Banerjee, and Yaguo Wang. Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides. APL Materials, 6(5):056103, April 2018. [ bib | DOI | http ]
•  Hema CP Movva, Timothy Lovorn, Babak Fallahazad, Stefano Larentis, Kyounghwan Kim, Takashi Taniguchi, Kenji Watanabe, Sanjay K Banerjee, Allan H MacDonald, and Emanuel Tutuc. Tunable Γ-Κ valley populations in hole-doped trilayer WSe2. Physical review letters, 120(10):107703, March 2018. [ bib | DOI | http ]
•  Zhongjian Zhang, Alex C De Palma, Christopher J Brennan, Gabriel Cossio, Rudresh Ghosh, Sanjay K Banerjee, and T Yu Edward. Probing nanoscale variations in strain and band structure of MoS2 on Au nanopyramids using tip-enhanced raman spectroscopy. Physical Review B, 97(8):085305, February 2018. [ bib | DOI | http ]


•  Ke Chen, Anupam Roy, Amritesh Rai, Amithraj Valsaraj, Xianghai Meng, Feng He, Xiaochuan Xu, Leonard F Register, Sanjay Banerjee, and Yaguo Wang. Carrier trapping by oxygen impurities in molybdenum diselenide. ACS applied materials & interfaces, 10(1):1125--1131, December 2017. [ bib | DOI | http ]
•  Omar B Mohammed, Hema CP Movva, Nitin Prasad, Amithraj Valsaraj, Sangwoo Kang, Chris M Corbet, Takashi Taniguchi, Kenji Watanabe, Leonard F Register, Emanuel Tutuc, et al. ReS2-based interlayer tunnel field effect transistor. Journal of Applied Physics, 122(24):245701, December 2017. [ bib | DOI | http ]
•  Joon-Seok Kim, Rafia Ahmad, Tribhuwan Pandey, Amritesh Rai, Simin Feng, Jing Yang, Zhong Lin, Mauricio Terrones, Sanjay K Banerjee, Abhishek K Singh, et al. Towards band structure and band offset engineering of monolayer Mo(1-x) W(x)S2 via strain. 2D Materials, 5(1):015008, October 2017. [ bib | DOI | http ]
•  Jun Hong Park, Atresh Sanne, Yuzheng Guo, Matin Amani, Kehao Zhang, Hema CP Movva, Joshua A Robinson, Ali Javey, John Robertson, Sanjay K Banerjee, et al. Defect passivation of transition metal dichalcogenides via a charge transfer van der waals interface. Science Advances, 3(10):e1701661, October 2017. [ bib | DOI | http ]
•  Xuehao Mou, Leonard F Register, Allan H MacDonald, and Sanjay K Banerjee. Bilayer pseudospin junction transistor (BISJT) for “beyond-CMOS” logic. IEEE Transactions on Electron Devices, 64(11):4759--4762, September 2017. [ bib | DOI | http ]
•  Tanmoy Pramanik, Anupam Roy, Rik Dey, Amritesh Rai, Samaresh Guchhait, Hema C.P. Movva, Cheng-Chih Hsieh, and Sanjay K. Banerjee. Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy. Journal of Magnetism and Magnetic Materials, 437:72--77, September 2017. [ bib | DOI | http ]
•  Sangwoo Kang, Xuehao Mou, Babak Fallahazad, Nitin Prasad, Xian Wu, Amithraj Valsaraj, Hema CP Movva, Kyounghwan Kim, Emanuel Tutuc, Leonard F Register, et al. Interlayer tunnel field-effect transistor (ITFET): physics, fabrication and applications. Journal of Physics D: Applied Physics, 50(38):383002, August 2017. [ bib | http ]
•  Tanuj Trivedi, Anupam Roy, Hema C. P. Movva, Emily S. Walker, Seth R. Bank, Dean P. Neikirk, and Sanjay K. Banerjee. Versatile large-area custom-feature van der waals epitaxy of topological insulators. ACS Nano, x(x):ASAP, July 2017. [ bib | DOI | http ]
•  C. C. Hsieh, Y. F. Chang, Y. Jeon, A. Roy, D. Shahrjerdi, and S. K. Banerjee. Short-term relaxation in HfOx/CeOx resistive random access memory with selector. IEEE Electron Device Letters, 38(7):871--874, July 2017. [ bib | DOI ]
•  Ke Chen, Rudresh Ghosh, Xianghai Meng, Anupam Roy, Joon-Seok Kim, Feng He, Sarah C Mason, Xiaochuan Xu, Jung-Fu Lin, Deji Akinwande, et al. Experimental evidence of exciton capture by mid-gap defects in cvd grown monolayer MoSe2. npj 2D Materials and Applications, 1(1):15, June 2017. [ bib | DOI | http ]
•  Sarmita Majumder, Karalee Jarvis, Sanjay K Banerjee, and Karen L Kavanagh. Interfacial reactions at Fe/topological insulator spin contacts. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 35(4):04F105, June 2017. [ bib | DOI | http ]
•  Hema C. P. Movva, Babak Fallahazad, Kyounghwan Kim, Stefano Larentis, Takashi Taniguchi, Kenji Watanabe, Sanjay K. Banerjee, and Emanuel Tutuc. Density-dependent quantum hall states and zeeman splitting in monolayer and bilayer WSe2. Phys. Rev. Lett., 118:247701, June 2017. [ bib | DOI | http ]
•  William Hsu, Amritesh Rai, Xiaoru Wang, Yun Wang, Taegon Kim, Sanjay K. Banerjee. Impact of Junction Depth and Abruptness on the Activation and the Leakage Current in Germanium n+/p Junctions. arXiv:1705.06733, May 2017. [  link ]
•  Anupam Roy, Rudresh Ghosh, Amritesh Rai, Atresh Sanne, Kyounghwan Kim, Hema C. P. Movva, Rik Dey, Tanmoy Pramanik, Sayema Chowdhury, Emanuel Tutuc, and Sanjay K. Banerjee. Intra-domain periodic defects in monolayer MoS2. Applied Physics Letters, 110(20):201905, May 2017. [ bib | DOI | http ]
•  Stefano Larentis, Babak Fallahazad, Hema C. P. Movva, Kyounghwan Kim, Amritesh Rai, Takashi Taniguchi, Kenji Watanabe, Sanjay K. Banerjee, and Emanuel Tutuc. Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits. ACS Nano, 11(5):4832--4839, May 2017. [ bib | DOI | http ]
•  Jaehyun Ahn, Harry Chou, and Sanjay K. Banerjee. Graphene-Al2O3-silicon heterojunction solar cells on flexible silicon substrates. Journal of Applied Physics, 121(16):163105, April 2017. [ bib | DOI | http ]
•  Chih-Yang Lin, Ying-Chen Chen, Meiqi Guo, Chih-Hung Pan, Fu-Yuan Jin, Yi-Ting Tseng, Cheng Chih Hsieh, Xiaohan Wu, Min-Chen Chen, Yao-Feng Chang, Fei Zhou, B. Fowler, Kuan-Chang Chang, Tsung-Ming Tsai, Ting-Chang Chang, Yonggang Zhao, S. M. Sze, S. Banerjee, and J. C. Lee. A universal model for interface-type threshold switching phenomena by comprehensive study of vanadium oxide-based selector. In 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), pages 1--2, April 2017. [ bib | DOI ]
•  Rik Dey, Anupam Roy, Tanmoy Pramanik, Amritesh Rai, Seung Heon Shin, Sarmita Majumder, Leonard F. Register, and Sanjay K. Banerjee. Detection of current induced spin polarization in epitaxial Bi2Te3 thin film. Applied Physics Letters, 110(12):122403, March 2017. [ bib | DOI | http ]
•  Bahniman Ghosh, Rik Dey, Leonard F. Register, and Sanjay K. Banerjee. A simulation study of voltage-assisted low-energy switching of a perpendicular anisotropy ferromagnet on a topological insulator. Journal of Computational Electronics, 16(1):120--126, March 2017. [ bib | DOI | http ]
•  Sushant Sonde, Andrei Dolocan, Ning Lu, Chris Corbet, Moon J Kim, Emanuel Tutuc, Sanjay K Banerjee, and Luigi Colombo. Ultrathin, wafer-scale hexagonal boron nitride on dielectric surfaces by diffusion and segregation mechanism. 2D Materials, 4(2):025052, March 2017. [ bib | DOI | http ]
•  William Hsu, Feng Wen, Xiaoru Wang, Yun Wang, Andrei Dolocan, Anupam Roy, Taegon Kim, Emanuel Tutuc, and Sanjay K. Banerjee. Laser Spike Annealing for Shallow Junctions in Ge CMOS. IEEE Transactions on Electron Devices, 64(2):346--352, February 2017. [ bib | DOI | http ]


•  N. Prasad, X. Mou, L. F. Register and, S. K Banerjee. Multi-barrier inter-layer tunnel field-effect transistor. In 2016 IEEE International Electron Devices Meeting (IEDM), 30.4.1--30.4.4, December 2016. [ bib | DOI | http ]
•  Cheng-Chih Hsieh, Anupam Roy, Yao-Feng Chang, Davood Shahrjerdi, and Sanjay K. Banerjee. A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems. Applied Physics Letters, 109(22):223501, November 2016. [ bib | DOI | http ]
•  Rik Dey, Anupam Roy, Tanmoy Pramanik, Samaresh Guchhait, Sushant Sonde, Amritesh Rai, Leonard F. Register, and Sanjay K. Banerjee. Localization and interaction effects of epitaxial Bi2Se3 bulk states in two-dimensional limit. Journal of Applied Physics, 120(16):164301, October 2016. [ bib | DOI | http ]
•  Amithraj Valsaraj, Leonard F. Register, Emanuel Tutuc, and Sanjay K. Banerjee. DFT simulations of inter-graphene-layer coupling with rotationally misaligned hBN tunnel barriers in graphene/hBN/graphene tunnel FETs. Journal of Applied Physics, 120(13):134310, October 2016. [ bib | DOI | http ]
•  William Hsu, Xiaoru Wang, Feng Wen, Yun Wang, Andrei Dolocan, Taegon Kim, Emanuel Tutuc, and Sanjay K. Banerjee. High Phosphorus Dopant Activation in Germanium Using Laser Spike Annealing. IEEE Electron Device Letters, 37(9):1088--1091, September 2016. [ bib | DOI | http ]
•  Xian Wu, Xuehao Mou, Leonard F. Register, and Sanjay K. Banerjee. Full-band simulations of single-particle resonant tunneling in transition metal dichalcogenide-based interlayer tunneling field-effect transistors. In 2016 Simulation of Semiconductor Processes and Devices (SISPAD), pages 89--92. IEEE, September 2016. [ bib | DOI | http ]
•  William Hsu, Taegon Kim, Harry Chou, Amritesh Rai, M. Josefina Arellano-Jimenez, Miguel Jose-Yacaman, Marylene Palard, and Sanjay, K. Banerjee. Enhancing the performance of GepFETs using novel BF+ implantation. In 2016 74th Annual Device Research Conference (DRC), August 2016. [ link ]
•  Sangwoo Kang, Nitin Prasad, Hema C. P. Movva, Amritesh Rai, Kyounghwan Kim, Takashi Taniguchi, Kenji Watanabe, Leonard F. Register, Emanuel Tutuc, and Sanjay K. Banerjee. Insights into interlayer tunnel FET performance improvement: Lessons learned from graphene hexagonal boron nitride heterostructures. In 2016 74th Annual Device Research Conference (DRC), August 2016. [ link ]
•  W. Hsu, T. Kim, H. Chou, A. Rai, and S. K. Banerjee. Novel BF+ Implantation for High Performance Ge pMOSFETs. IEEE Electron Device Letters, 37(8):954--957, August 2016. [ bib | DOI ]
•  Bahniman Ghosh, Rik Dey, Leonard F. Register, and Sanjay K. Banerjee. Voltage-controlled low-energy switching of nanomagnets through Ruderman-Kittel-Kasuya-Yosida interactions for magnetoelectric device applications. Journal of Applied Physics, 120(3):034303, July 2016. [ bib | DOI | http ]
•  William Hsu, Taegon Kim, Alfredo Benitez-Lara, Harry Chou, Andrei Dolocan, Amritesh Rai, M. Josefina Arellano-Jimenez, Marylene Palard, Miguel Jose-Yacaman, and Sanjay K. Banerjee. Diffusion and recrystallization of B implanted in crystalline and pre-amorphized Ge in the presence of F. Journal of Applied Physics, 120(1):015701, July 2016. [ bib | DOI | http ]
•  Sangwoo Kang, Nitin Prasad, Hema C. P. Movva, Amritesh Rai, Kyounghwan Kim, Xuehao Mou, Takashi Taniguchi, Kenji Watanabe, Leonard F. Register, Emanuel Tutuc, and Sanjay K. Banerjee. Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene–hBN–Graphene Interlayer Tunnel Field Effect Transistors. Nano Letters, July 2016. [ bib | DOI | http ]
•  S. Majumder, S. Guchhait, R. Dey, L. F. Register, and S. K. Banerjee. Large Magnetoresistance at Room Temperature in Ferromagnet - Topological Insulator Contacts. IEEE Transactions on Nanotechnology, 15(4):671--674, July 2016. [ bib | DOI ]
•  Aqyan A. Bhatti, Cheng-Chih Hsieh, Anupam Roy, Leonard F. Register, and Sanjay K. Banerjee. First-principles simulation of oxygen vacancy migration in HfOx, CeOx, and at their interfaces for applications in resistive random-access memories. Journal of Computational Electronics, pages 1--8, June 2016. [ bib | DOI | http ]
•  Hema C. P. Movva, Sangwoo Kang, Amritesh Rai, Kyounghwan Kim, Babak Fallahazad, Takashi Taniguchi, Kenji Watanabe, Emanuel Tutuc, and Sanjay K. Banerjee. Room temperature gate-tunable negative differential resistance in MoS2/hBN/WSe2 heterostructures. In 2016 74th Device Research Conference (DRC), pages 1--2. IEEE, June 2016. [ bib | DOI | http ]
•  Maruthi Yogeesh, Hsiao-Yu Chang, Wei Li, Somayyeh Rahimi, Amritesh Rai, Atresh Sanne, Rudresh Ghosh, Sanjay K Banerjee, and Deji Akinwande. Towards wafer scale monolayer MoS2 based flexible low-power RF electronics for IoT systems. In 2016 74th Device Research Conference (DRC), pages 1--2. IEEE, June 2016. [ bib | DOI | http ]
•  Sk F. Chowdhury, Maruthi N. Yogeesh, Sanjay K. Banerjee, and Deji Akinwande. Black Phosphorous Thin-Film Transistor and RF Circuit Applications. IEEE Electron Device Letters, 37(4):449--451, April 2016. [ bib | DOI | http ]
•  Rudresh Ghosh, Joon-Seok Kim, Anupam Roy, Harry Chou, Mary Vu, Sanjay K. Banerjee, and Deji Akinwande. Large area chemical vapor deposition growth of monolayer MoSe2 and its controlled sulfurization to MoS2. Journal of Materials Research, 31(07):917--922, April 2016. [ bib | DOI | http ]
•  Andrew Kummel, Jun Hong Park, Iljo Kwak, Evgeniy Chagarov, Hema Movva, Harry Chou, Sanjay K. Banerjee, Sara Fathipour, Alan Seabaugh, Susan Fullerton, Suresh Vishwanath, Huili Grace Xing, and Pabitra Choudhury. (Invited) Phthalocyanine Monolayer Nucleation of Gate Oxide ALD on Single Layer Graphene and TMD Surfaces. ECS Meeting Abstracts, MA2016-01(13):844--844, April 2016. [ bib | http ]
•  Jaehyun Ahn, Harry Chou, Donghyi Koh, Taegon Kim, Anupam Roy, Jonghan Song, and Sanjay K. Banerjee. Nanoscale doping of compound semiconductors by solid phase dopant diffusion. Applied Physics Letters, 108(12):122107, March 2016. [ bib | DOI | http ]
•  Hsiao-Yu Chang, Maruthi Nagavalli Yogeesh, Rudresh Ghosh, Amritesh Rai, Atresh Sanne, Shixuan Yang, Nanshu Lu, Sanjay Kumar Banerjee, and Deji Akinwande. Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime. Advanced Materials, 28(9):1818--1823, March 2016. [ bib | DOI | http ]
•  Sangwoo Kang, Hema C. P. Movva, Atresh Sanne, Amritesh Rai, and Sanjay K. Banerjee. Influence of electron-beam lithography exposure current level on the transport characteristics of graphene field effect transistors. Journal of Applied Physics, 119(12):124502, March 2016. [ bib | DOI | http ]
•  Kyounghwan Kim, Matthew Yankowitz, Babak Fallahazad, Sangwoo Kang, Hema C. P. Movva, Shengqiang Huang, Stefano Larentis, Chris M. Corbet, Takashi Taniguchi, Kenji Watanabe, Sanjay K. Banerjee, Brian J. LeRoy, and Emanuel Tutuc. van der Waals Heterostructures with High Accuracy Rotational Alignment. Nano Letters, 16(3):1989--1995, March 2016. [ bib | DOI | http ]
•  Anupam Roy, Hema C. P. Movva, Biswarup Satpati, Kyounghwan Kim, Rik Dey, Amritesh Rai, Tanmoy Pramanik, Samaresh Guchhait, Emanuel Tutuc, and Sanjay K. Banerjee. Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy. ACS Applied Materials & Interfaces, 8(11):7396--7402, March 2016. [ bib | DOI | http ]
•  Babak Fallahazad, Hema C. P. Movva, Kyounghwan Kim, Stefano Larentis, Takashi Taniguchi, Kenji Watanabe, Sanjay K. Banerjee, and Emanuel Tutuc. Shubnikov-de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer WSe2: Landau Level Degeneracy, Effective Mass, and Negative Compressibility. Physical Review Letters, 116(8):086601, February 2016. [ bib | DOI | http ]
•  Amber McCreary, Rudresh Ghosh, Matin Amani, Jin Wang, Karel-Alexander N. Duerloo, Ankit Sharma, Karalee Jarvis, Evan J. Reed, Avinash M. Dongare, Sanjay K. Banerjee, Mauricio Terrones, Raju R. Namburu, and Madan Dubey. Effects of Uniaxial and Biaxial Strain on Few-Layered Terrace Structures of MoS2 Grown by Vapor Transport. ACS Nano, 10(3):3186--3197, February 2016. [ bib | DOI | http ]
•  Tanuj Trivedi, Sushant Sonde, Hema C. P. Movva, and Sanjay K. Banerjee. Weak antilocalization and universal conductance fluctuations in bismuth telluro-sulfide topological insulators. Journal of Applied Physics, 119(5):055706, February 2016. [ bib | DOI | http ]
•  U. Roy, T. Pramanik, L. F. Register, and S. K. Banerjee. Write Error Rate of Spin-Transfer-Torque Random Access Memory Including Micromagnetic Effects Using Rare Event Enhancement. IEEE Transactions on Magnetics, PP(99):1--1, 2016. [ bib | DOI ]


•  Xuehao Mou, Leonard F. Register, Allan H. MacDonald, and Sanjay K. Banerjee. Quantum transport simulation of exciton condensate transport physics in a double-layer graphene system. Phys. Rev. B, 92(23):235413, December 2015. [ bib | DOI | http ]
•  Amithraj Valsaraj, Jiwon Chang, Amritesh Rai, Leonard F. Register, and Sanjay K Banerjee. Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide. 2D Materials, 2(4):045009, November 2015. [ link ]
•  Donghyi Koh, Seung Heon Shin, Jaehyun Ahn, Sushant Sonde, Hyuk-Min Kwon, Tommaso Orzali, Dae-Hyun Kim, Tae-Woo Kim, and Sanjay K. Banerjee. Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device. Applied Physics Letters, 107(18):183509, November 2015. [ bib | DOI | http ]
•  Jun Hong Park, Hema C. P. Movva, Evgeniy Chagarov, Kasra Sardashti, Harry Chou, Iljo Kwak, Kai-Ting Hu, Susan K. Fullerton-Shirey, Pabitra Choudhury, Sanjay K. Banerjee, and Andrew C. Kummel. In Situ Observation of Initial Stage in Dielectric Growth and Deposition of Ultrahigh Nucleation Density Dielectric on Two-Dimensional Surfaces. Nano Lett., 15(10):6626-6633, October 2015. [ bib | DOI | http ]
•  Hema C. P. Movva, Amritesh Rai, Sangwoo Kang, Kyounghwan Kim, Babak Fallahazad, Takashi Taniguchi, Kenji Watanabe, Emanuel Tutuc, and Sanjay K. Banerjee. High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors. ACS Nano, 9(10):10402-10410, October 2015. [ bib | DOI | http ]
•  Xian Wu, Xuehao Mou, L.F. Register, and S.K. Banerjee. Theoretical study of the spontaneous electron-hole exciton condensates between n and p-type MoS2 monolayers, toward beyond CMOS applications. In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pages 124-127, September 2015. [ bib | DOI ]
•  A. Valsaraj, L.F. Register, S.K. Banerjee, and Jiwon Chang. Substitutional doping of metal contact for monolayer transition metal dichalcogenides: A density functional theory based study. In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pages 230-233, September 2015. [ bib | DOI ]
•  T. Pramanik, U. Roy, L.F. Register, and S.K. Banerjee. Proposal of a Multistate Memory Using Voltage Controlled Magnetic Anisotropy of a Cross-Shaped Ferromagnet. IEEE Transactions on Nanotechnology, 14(5):883-888, September 2015. [ bib | DOI ]
•  D.M. Crum, A. Valsaraj, L.F. Register, S.K. Banerjee, B. Sahu, Z. Krivakopic, S. Banna, and D. Nayak. Impact of gate oxide complex band structure on n-channel III –V FinFETs. In 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pages 250-253, September 2015. [ bib | DOI ]
•  Atresh Sanne, Maruthi N. Yogeesh, Rudresh Ghosh, Amritesh Rai, Seung H. Shin, Ankit Sharma, Leo Mathew, Rajesh Rao, Deji Akinwande, and Sanjay K. Banerjee. Radio frequency transistors and circuit applications based on CVD MoS2 In 2015 73rd Annual Device Research Conference (DRC), August 2015. [ link ]
•  Hema C. P. Movva, Amritesh Rai, Sangwoo Kang, Kyounghwan Kim, Samaresh Guchhait, Takashi Taniguchi, Kenji Watanabe, Emanuel Tutuc, and Sanjay K. Banerjee. Top-gated WSe2 field-effect transistors with Pt contacts. In 2015 73rd Annual Device Research Conference (DRC), August 2015. [ link ]
•  Amritesh Rai, Amithraj Valsaraj, Hema C. P. Movva, Anupam Roy, Emanuel Tutuc, Leonard F. Register, and Sanjay K. Banerjee. Interfacial-oxygen-vacancy mediated doping of MoS2 by high-k dielectrics. In 2015 73rd Annual Device Research Conference (DRC), August 2015. [ link ]
•  Atresh Sanne, Rudresh Ghosh, Amritesh Rai, Maruthi Nagavalli Yogeesh, Seung Heon Shin, Ankit Sharma, Karalee Jarvis, Leo Mathew, Rajesh Rao, Deji Akinwande, and Sanjay Banerjee. Radio Frequency Transistors and Circuits Based on CVD MoS2. Nano Lett., 15(8):5039-5045, August 2015. [ bib | DOI | http ]
•  Amritesh Rai, Amithraj Valsaraj, Hema C.P. Movva, Anupam Roy, Rudresh Ghosh, Sushant Sonde, Sangwoo Kang, Jiwon Chang, Tanuj Trivedi, Rik Dey, Samaresh Guchhait, Stefano Larentis, Leonard F. Register, Emanuel Tutuc, and Sanjay K. Banerjee. Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation. Nano Lett., 15(7):4329-4336, July 2015. [ bib | DOI | http ]
•  W. Hsu, J. Mantey, L.F. Register, and S.K. Banerjee. On the Electrostatic Control of Gate-Normal-Tunneling Field-Effect Transistors. IEEE Transactions on Electron Devices, 62(7):2292-2299, July 2015. [ bib | DOI ]
•  U. Roy, D.L. Kencke, T. Pramanik, L.F. Register, and S.K. Banerjee. Write error rate in spin-transfer-torque random access memory including micromagnetic effects. In Device Research Conference (DRC), 2015 73rd Annual, pages 147-148, June 2015. [ bib | DOI ]
•  C.-C. Hsieh, A. Roy, Yao-Feng Chang, A. Rai, and S. Banerjee. Cerium oxide based bipolar resistive switching memory with low operation voltage and high resistance ratio. In Device Research Conference (DRC), 2015 73rd Annual, pages 101-102, June 2015. [ bib | DOI ]
•  Urmimala Roy, Rik Dey, Tanmoy Pramanik, Bahniman Ghosh, Leonard F. Register, and Sanjay K. Banerjee. Magnetization switching of a metallic nanomagnet via current-induced surface spin-polarization of an underlying topological insulator. Journal of Applied Physics, 117(16):163906, April 2015. [ bib | DOI | http ]
•  Anupam Roy, Samaresh Guchhait, Rik Dey, Tanmoy Pramanik, Cheng-Chih Hsieh, Amritesh Rai, and Sanjay K Banerjee. Perpendicular Magnetic Anisotropy and Spin Glass-like Behavior in Molecular Beam Epitaxy Grown Chromium Telluride Thin Films. ACS Nano, 9(4):3772-3779, April 2015. [ bib | DOI | http ]
•  Sangwoo Kang, B. Fallahazad, Kayoung Lee, H. Movva, Kyounghwan Kim, C.M. Corbet, T. Taniguchi, K. Watanabe, L. Colombo, L.F. Register, E. Tutuc, and S.K. Banerjee. Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET. IEEE Electron Device Letters, 36(4):405-407, April 2015. [ bib | DOI ]
•  Cheng-Chih Hsieh, Anupam Roy, Amritesh Rai, Yao-Feng Chang, and Sanjay K. Banerjee. Characteristics and mechanism study of cerium oxide based random access memories. Applied Physics Letters, 106(17):173108, April 2015. [ bib | DOI | http ]
•  A. Sanne, R. Ghosh, A. Rai, H. C. P. Movva, A. Sharma, R. Rao, L. Mathew, and S. K. Banerjee. Top-gated chemical vapor deposited MoS2 field-effect transistors on Si3N4 substrates. Applied Physics Letters, 106(6):062101, February 2015. [ bib | DOI | http ]
•  William Hsu, Jason Mantey, Leonard F. Register, and Sanjay K. Banerjee. Comment on “Assessment of field-induced quantum confinement in heterogate germanium electron–hole bilayer tunnel field-effect transistor” [Appl. Phys. Lett. 105, 082108 (2014)]. Applied Physics Letters, 106(2):026102, January 2015. [ bib | DOI | http ]
•  Babak Fallahazad, Kayoung Lee, Sangwoo Kang, Jiamin Xue, Stefano Larentis, Christopher Corbet, Kyounghwan Kim, Hema C. P. Movva, Takashi Taniguchi, Kenji Watanabe, Leonard F. Register, Sanjay K. Banerjee, and Emanuel Tutuc. Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures. Nano Lett., 15(1):428-433, January 2015. [ bib | DOI | http ]
•  Chris M. Corbet, Connor McClellan, Amritesh Rai, Sushant Sudam Sonde, Emanuel Tutuc, and Sanjay K. Banerjee. Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS2. ACS Nano, 9(1):363-370, January 2015. [ bib | DOI | http ]


•  Yujia Zhai, L. Mathew, R. Rao, M. Palard, S. Chopra, J.G. Ekerdt, L.F. Register, and S.K. Banerjee. High-Performance Vertical Gate-All-Around Silicon Nanowire FET With High-κ/Metal Gate. IEEE Transactions on Electron Devices, 61(11):3896-3900, November 2014. [ bib | DOI ]
•  William Hsu, Jason Mantey, Cheng-Chih Hsieh, Anupam Roy, and Sanjay K. Banerjee. Thin, relaxed Si1−xGex virtual substrates on Si grown using C-doped Ge buffers. Applied Physics Letters, 105(15):152107, October 2014. [ bib | DOI | http ]
•  Gianluca Fiori, Francesco Bonaccorso, Giuseppe Iannaccone, Tomás Palacios, Daniel Neumaier, Alan Seabaugh, Sanjay K. Banerjee, and Luigi Colombo. Electronics based on two-dimensional materials. Nature Nanotechnology, 9(10):768-779, October 2014. [ bib | DOI | .html ]
•  Chris M. Corbet, Connor McClellan, Kyounghwan Kim, Sushant Sonde, Emanuel Tutuc, and Sanjay K. Banerjee. Oxidized Titanium as a Gate Dielectric for Graphene Field Effect Transistors and Its Tunneling Mechanisms. ACS Nano, 8(10):10480-10485, October 2014. [ bib | DOI | http ]
•  Xuehao Mou, L.F. Register, and S.K. Banerjee. Interplay among Bilayer pseudoSpin field-effect transistor (BiSFET) performance, BiSFET scaling and condensate strength. In 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pages 309-312, September 2014. [ bib | DOI ]
•  Mohamed M. Hilali, Sayan Saha, Emmanuel Onyegam, Rajesh Rao, Leo Mathew, and Sanjay K. Banerjee. Light trapping in ultrathin 25 μm exfoliated Si solar cells. Applied Optics, 53(27):6140, September 2014. [ bib | DOI | http ]
•  Rik Dey, Tanmoy Pramanik, Anupam Roy, Amritesh Rai, Samaresh Guchhait, Sushant Sonde, Hema C. P. Movva, Luigi Colombo, Leonard F. Register, and Sanjay K. Banerjee. Strong spin-orbit coupling and Zeeman spin splitting in angle dependent magnetoresistance of Bi2Te3. Applied Physics Letters, 104(22):223111, June 2014. [ bib | DOI | http ]
•  Tanmoy Pramanik, Urmimala Roy, Maxim Tsoi, Leonard F. Register, and Sanjay K. Banerjee. Micromagnetic simulations of spin-wave normal modes and the spin-transfer-torque driven magnetization dynamics of a ferromagnetic cross. Journal of Applied Physics, 115(17):17D123, May 2014. [ bib | DOI | http ]
•  Donghyi Koh, Jung-Hwan Yum, Sanjay K. Banerjee, Todd W. Hudnall, Christopher Bielawski, William A. Lanford, Benjamin L. French, Marc French, Patrick Henry, Han Li, Markus Kuhn, and Sean W. King. Investigation of atomic layer deposited beryllium oxide material properties for high-k dielectric applications. Journal of Vacuum Science & Technology B, 32(3):03D117, May 2014. [ bib | DOI | http ]
•  Emmanuel U. Onyegam, Dabraj Sarkar, Mohamed M. Hilali, Sayan Saha, Leo Mathew, Rajesh A. Rao, Ryan S. Smith, Dewei Xu, Dharmesh Jawarani, Ricardo Garcia, Moses Ainom, and Sanjay K. Banerjee. Realization of dual-heterojunction solar cells on ultra-thin ∼25 μm, flexible silicon substrates. Applied Physics Letters, 104(15):153902, April 2014. [ bib | DOI | http ]
•  D. Koh, H. M. Kwon, T.-W. Kim, D.-H. Kim, Todd W. Hudnall, Christopher W. Bielawski, W. Maszara, D. Veksler, D. Gilmer, P. D. Kirsch, and S. K. Banerjee. Lg = 100 nm In0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer. Applied Physics Letters, 104(16):163502, April 2014. [ bib | DOI | http ]
•  Jiwon Chang, Stefano Larentis, Emanuel Tutuc, Leonard F. Register, and Sanjay K. Banerjee. Atomistic simulation of the electronic states of adatoms in monolayer MoS2. Applied Physics Letters, 104(14):141603, April 2014. [ bib | DOI | http ]
•  Michael E. Ramón, Hema C. P. Movva, Sk Fahad Chowdhury, Kristen N. Parrish, Amritesh Rai, Carl W. Magnuson, Rodney S. Ruoff, Deji Akinwande, and Sanjay K. Banerjee. Impact of contact and access resistances in graphene field-effect transistors on quartz substrates for radio frequency applications. Applied Physics Letters, 104(7):073115, February 2014. [ bib | DOI | http ]
•  K. S. Min, S. H. Kang, J. K. Kim, J. H. Yum, Y. I. Jhon, Todd W. Hudnall, C. W. Bielawski, S. K. Banerjee, G. Bersuker, M. S. Jhon, and G. Y. Yeom. Atomic layer etching of BeO using BCl3/Ar for the interface passivation layer of III–V MOS devices. Microelectronic Engineering, 114:121-125, February 2014. [ bib | DOI | http ]
•  Jiwon Chang, Leonard F. Register, and Sanjay K. Banerjee. Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors. Journal of Applied Physics, 115(8):084506, February 2014. [ bib | DOI | http ]
•  Yujia Zhai, Leo Mathew, Rajesh Rao, S. V. Sreenivasan, C. Grant Willson, and Sanjay K. Banerjee. Vertical finFET with Salicide Contact for Potential Power Applications. ECS J. Solid State Sci. Technol., 3(10):Q203-Q206, January 2014. [ bib | DOI | http ]
•  Sayan Saha, Mohamed M. Hilali, Emmanuel U. Onyegam, Sushant Sonde, Rajesh A. Rao, Leo Mathew, Ajay Upadhyaya, and Sanjay K. Banerjee. Improved Cleaning Process for Textured ∼25 μm Flexible Mono-Crystalline Silicon Heterojunction Solar Cells with Metal Backing. ECS J. Solid State Sci. Technol., 3(7):Q142-Q145, January 2014. [ bib | DOI | http ]


•  Min Sang Park, Yonghyun Kim, Kyong Taek Lee, Chang Yong Kang, Byoung-Gi Min, Jungwoo Oh, Prashant Majhi, Hsing-Huang Tseng, Jack C. Lee, Sanjay K. Banerjee, Jeong-Soo Lee, Raj Jammy, and Yoon-Ha Jeong. Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs. Microelectronic Engineering, 112:80-83, December 2013. [ bib | DOI | http ]
•  Xuehao Mou, L.F. Register, and S.K. Banerjee. Quantum transport simulations on the feasibility of the bilayer pseudospin field effect transistor (BiSFET). In Electron Devices Meeting (IEDM), 2013 IEEE International, pages 4.7.1-4.7.4, December 2013. [ bib | DOI ]
•  T.-W. Kim, D.-H. Kim, D.H. Koh, H.M. Kwon, R.H. Baek, D. Veksler, C. Huffman, K. Matthews, S. Oktyabrsky, A. Greene, Y. Ohsawa, A. Ko, H. Nakajima, M. Takahashi, T. Nishizuka, H. Ohtake, S.K. Banerjee, S.H. Shin, D.-H. Ko, C. Kang, D. Gilmer, R.J.W. Hill, W. Maszara, C. Hobbs, and P.D. Kirsch. Sub-100 nm InGaAs quantum-well (QW) tri-gate MOSFETs with Al2O3/HfO2 (EOT < 1 nm) for low-power logic applications. In Electron Devices Meeting (IEDM), 2013 IEEE International, pages 16.3.1-16.3.4, December 2013. [ bib | DOI ]
•  H. S. Shin, J. H. Yum, D. W. Johnson, H. R. Harris, Todd W. Hudnall, J. Oh, P. Kirsch, W.-E. Wang, C. W. Bielawski, S. K. Banerjee, J. C. Lee, and H. D. Lee. Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors. Applied Physics Letters, 103(22):223504, November 2013. [ bib | DOI | http ]
•  Samaresh Guchhait, Hendrik Ohldag, Elke Arenholz, Domingo A. Ferrer, Apurva Mehta, and Sanjay K. Banerjee. Magnetic ordering of implanted Mn in HOPG substrates. Phys. Rev. B, 88(17):174425, November 2013. [ bib | DOI | http ]
•  Jiwon Chang, Leonard F. Register, and Sanjay K. Banerjee. Atomistic full-band simulations of monolayer MoS2 transistors. Applied Physics Letters, 103(22):223509, November 2013. [ bib | DOI | http ]
•  M. S. Khalil, M. J. A. Stoutimore, S. Gladchenko, A. M. Holder, C. B. Musgrave, A. C. Kozen, G. Rubloff, Y. Q. Liu, R. G. Gordon, J. H. Yum, S. K. Banerjee, C. J. Lobb, and K. D. Osborn. Evidence for hydrogen two-level systems in atomic layer deposition oxides. Applied Physics Letters, 103(16):162601, October 2013. [ bib | DOI | http ]
•  Xuehao Mou, L.F. Register, and S.K. Banerjee. Quantum transport simulation of Bilayer pseudoSpin Field-Effect Transistor (BiSFET) with tight-binding hartree-fock model. In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pages 420-423, September 2013. [ bib | DOI ]
•  Derek W. Johnson, Jung Hwan Yum, Todd W. Hudnall, Ryan M. Mushinski, Christopher W. Bielawski, John C. Roberts, Wei-E. Wang, Sanjay K. Banerjee, and H. Rusty Harris. Characterization of ALD Beryllium Oxide as a Potential High-k Gate Dielectric for Low-Leakage AlGaN/GaN MOSHEMTs. Journal of Elec Materi, 43(1):151-154, September 2013. [ bib | DOI | http ]
•  Jiwon Chang, L.F. Register, and S.K. Banerjee. Comparison of ballistic transport characteristics of monolayer transition metal dichalcogenides (TMDs) MX2 (M = Mo, W; X = S, Se, Te) n-MOSFETs. In 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pages 408-411, September 2013. [ bib | DOI ]
•  Priyamvada Jadaun, Di Xiao, Qian Niu, and Sanjay K. Banerjee. Topological classification of crystalline insulators with space group symmetry. Phys. Rev. B, 88(8):085110, August 2013. [ bib | DOI | http ]
•  Priyamvada Jadaun, Hema C. P. Movva, Leonard F. Register, and Sanjay K. Banerjee. Theory and synthesis of bilayer graphene intercalated with ICl and IBr for low power device applications. Journal of Applied Physics, 114(6):063702, August 2013. [ bib | DOI | http ]
•  William Hsu, Jason Mantey, Leonard F. Register, and Sanjay K. Banerjee. Strained-Si/strained-Ge type-II staggered heterojunction gate-normal-tunneling field-effect transistor. Applied Physics Letters, 103(9):093501, August 2013. [ bib | DOI | http ]
•  S. Saha, R.A. Rao, L. Mathew, M. Ainom, and S.K. Banerjee. A novel low-cost method for fabricating bifacial solar cells. In Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, pages 2268-2271, June 2013. [ bib | DOI ]
•  Urmimala Roy, Tanmoy Pramanik, Maxim Tsoi, Leonard F. Register, and Sanjay K. Banerjee. Micromagnetic study of spin-transfer-torque switching of a ferromagnetic cross towards multi-state spin-transfer-torque based random access memory. Journal of Applied Physics, 113(22):223904, June 2013. [ bib | DOI | http ]
•  E.U. Onyegam, W. James, R. Rao, L. Mathew, M. Hilali, and S.K. Banerjee. Amorphous/crystalline silicon heterojunction solar cells via Remote plasma chemical vapor deposition: Influence of hydrogen dilution, RF power, and sample Z-height position. In Photovoltaic Specialists Conference (PVSC), 2013 IEEE 39th, pages 1272-1276, June 2013. [ bib | DOI ]
•  Jiwon Chang, L.F. Register, and S.K. Banerjee. Full-band quantum transport simulations of monolayer MoS2 transistors: Possibility of negative differential resistance. In Device Research Conference (DRC), 2013 71st Annual, pages 75-76, June 2013. [ bib | DOI ]
•  J. Mantey, W. Hsu, J. James, E. U. Onyegam, S. Guchhait, and S. K. Banerjee. Ultra-smooth epitaxial Ge grown on Si(001) utilizing a thin C-doped Ge buffer layer. Applied Physics Letters, 102(19):192111, May 2013. [ bib | DOI | http ]
•  J.H. Yum, H.S. Shin, R.M. Mushinski, T.W. Hudnall, J. Oh, W.Y. Loh, C.W. Bielawski, G. Bersuker, S.K. Banerjee, W.E. Wang, P.D. Kirsch, and R. Jammy. A comparative study of gate first and last Si MOSFETs fabrication processes using ALD beryllium oxide as an interface passivation layer. In 2013 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), pages 1-2, April 2013. [ bib | DOI ]
•  Sayan Saha, Mohamed M. Hilali, Emmanuel U. Onyegam, Dabraj Sarkar, Dharmesh Jawarani, Rajesh A. Rao, Leo Mathew, Ryan S. Smith, Dewei Xu, Ujjwal K. Das, Bhushan Sopori, and Sanjay K. Banerjee. Single heterojunction solar cells on exfoliated flexible ∼25 μm thick mono-crystalline silicon substrates. Applied Physics Letters, 102(16):163904, April 2013. [ bib | DOI | http ]
•  Anupam Roy, Samaresh Guchhait, Sushant Sonde, Rik Dey, Tanmoy Pramanik, Amritesh Rai, Hema C. P. Movva, Luigi Colombo, and Sanjay K. Banerjee. Two-dimensional weak anti-localization in Bi2Te3 thin film grown on Si(111)-(7 × 7) surface by molecular beam epitaxy. Applied Physics Letters, 102(16):163118, April 2013. [ bib | DOI | http ]
•  E. U. Onyegam, D. Sarkar, M. Hilali, S. Saha, R. A. Rao, L. Mathew, D. Jawarani, J. Mantey, M. Ainom, R. Garcia, W. James, and S. K. Banerjee. Exfoliated, thin, flexible germanium heterojunction solar cell with record FF=58.1%. Solar Energy Materials and Solar Cells, 111:206-211, April 2013. [ bib | DOI | http ]
•  Michael E. Ramón, Tarik Akyol, Davood Shahrjerdi, Chadwin D. Young, Julian Cheng, Leonard F. Register, and Sanjay K. Banerjee. Fast and slow transient charging in various III-V field-effect transistors with atomic-layer-deposited-Al2O3 gate dielectric. Applied Physics Letters, 102(2):022104, January 2013. [ bib | DOI | http ]


•  Yujia Zhai, Marylene Palard, Leo Mathew, Muhammad Mustafa Hussain, C. Grant Willson, Emanuel Tutuc, and Sanjay K. Banerjee. Fabrication of Three-Dimensional MIS Nano-Capacitor Based on Nanoimprinted Single Crystal Silicon Nanowire Arrays. Micro and Nanosystems, 4(4):333-338, December 2012. [ bib ]
•  T.-W. Kim, D. Kim, D.-H. Koh, R.J.W. Hill, R.T.P. Lee, M.H. Wong, T. Cunningham, J.A. Del Alamo, S.K. Banerjee, S. Oktyabrsky, A. Greene, Y. Ohsawa, Y. Trickett, G. Nakamura, Q. Li, K.M. Lau, C. Hobbs, P.D. Kirsch, and R. Jammy. ETB-QW InAs MOSFET with scaled body for improved electrostatics. In Electron Devices Meeting (IEDM), 2012 IEEE International, pages 32.3.1-32.3.4, December 2012. [ bib | DOI ]
•  Jiwon Chang, Leonard F. Register, and Sanjay K. Banerjee. Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 112(12):124511, December 2012. [ bib | DOI | http ]
•  Juan C. Cervantes-González, Donghwan Ahn, Xiaoguang Zheng, Sanjay K. Banerjee, Alfonso T. Jacome, Joe C. Campbell, and Ignacio E. Zaldivar-Huerta. Germanium metal-semiconductor-metal photodetectors evanescently coupled with upper-level silicon oxynitride dielectric waveguides. Applied Physics Letters, 101(26):261109, December 2012. [ bib | DOI | http ]
•  Yujia Zhai, Leo Mathew, Rajesh Rao, Dewei Xu, and Sanjay K. Banerjee. High-Performance Flexible Thin-Film Transistors Exfoliated from Bulk Wafer. Nano Lett., 12(11):5609-5615, November 2012. [ bib | DOI | http ]
•  Li Tao, Jongho Lee, Milo Holt, Harry Chou, Stephen J. McDonnell, Domingo A. Ferrer, Matías G. Babenco, Robert M. Wallace, Sanjay K. Banerjee, Rodney S. Ruoff, and Deji Akinwande. Uniform Wafer-Scale Chemical Vapor Deposition of Graphene on Evaporated Cu (111) Film with Quality Comparable to Exfoliated Monolayer. J. Phys. Chem. C, 116(45):24068-24074, November 2012. [ bib | DOI | http ]
•  Hema C. P. Movva, Michael E. Ramón, Chris M. Corbet, Sushant Sonde, Sk Fahad Chowdhury, Gary Carpenter, Emanuel Tutuc, and Sanjay K. Banerjee. Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions. Applied Physics Letters, 101(18):183113, October 2012. [ bib | DOI | http ]
•  M.E. Ramón, K.N. Parrish, S.F. Chowdhury, Carl W. Magnuson, H.C.P. Movva, R.S. Ruoff, Sanjay K. Banerjee, and D. Akinwande. Three-Gigahertz Graphene Frequency Doubler on Quartz Operating Beyond the Transit Frequency. IEEE Transactions on Nanotechnology, 11(5):877-883, September 2012. [ bib | DOI ]
•  Priyamvada Jadaun, Bhagawan R. Sahu, Leonard F. Register, and Sanjay K. Banerjee. Density functional theory studies of interactions of graphene with its environment: Substrate, gate dielectric and edge effects. Solid State Communications, 152(15):1497-1502, August 2012. [ bib | DOI | http ]
•  D. Sarkar, E.U. Onyegam, S. Saha, L. Mathew, R.A. Rao, M.M. Hilali, R.S. Smith, D. Xu, D. Jawarani, R. Garcia, R. Stout, A. Gurmu, M. Ainom, J.G. Fossum, and S.K. Banerjee. Remote plasma chemical vapor deposition for high-efficiency ultra-thin ∼25-microns crystalline Si solar cells. In Photovoltaic Specialists Conference (PVSC), Volume 2, 2012 IEEE 38th, pages 1-6, June 2012. [ bib | DOI ]
•  D. Reddy, L.F. Register, and S.K. Banerjee. Bilayer graphene vertical tunneling field effect transistor. In Device Research Conference (DRC), 2012 70th Annual, pages 73-74, June 2012. [ bib | DOI ]
•  Michael E. Ramon, Kristen N. Parrish, Jongho Lee, Carl W. Magnuson, Li Tao, Rodney S. Ruoff, S.K. Banerjee, and Deji Akinwande. Graphene frequency doubler with record 3GHz bandwidth and the maximum conversion gain prospects. In Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, pages 1-3, June 2012. [ bib | DOI ]
•  Luigi Colombo, Sanjay Banerjee, Seyoung Kim, and Emanuel Tutuc. Establishing a uniformly thin dielectric layer on graphene in a semiconductor device without affecting the properties of graphene, June 2012. U.S. Classification 257/635, 438/591, 257/E21.085, 257/E29.001, 257/415; International Classification H01L29/00, H01L21/18; Cooperative Classification H01L21/28255, H01L29/1606, H01L29/51, H01L29/513; European Classification H01L21/28E3, H01L29/16G. [ bib | http ]
•  Jiwon Chang, L.F. Register, and S.K. Banerjee. Possible applications of topological insulator thin films for tunnel FETs. In Device Research Conference (DRC), 2012 70th Annual, pages 31-32, June 2012. [ bib | DOI ]
•  Sanjay K. Banerjee, Franklin Register II Leonard, Allan MacDonald, Dharmendar Reddy Palle, and Emanuel Tutuc. Bi-layer pseudo-spin field-effect transistor, May 2012. U.S. Classification 257/39, 257/36, 438/158; International Classification H01L29/06; Cooperative Classification H01L29/7781, B82Y10/00, H01L29/7831, H01L29/1606, H01L29/775; European Classification H01L29/775, H01L29/78E, B82Y10/00, H01L29/16G, H01L29/778B. [ bib | http ]
•  Leonard F. Register, X. Mou, Dharmendar Reddy, Wooyoung Jung, Inti Sodemann, Dima Pesin, Arjang Hassibi, Allan H. MacDonald, and Sanjay K. Banerjee. Bilayer Pseudo-Spin Field Effect Transistor (BiSFET): Concepts and Critical Issues for Realization. ECS Trans., 45(4):3-14, April 2012. [ bib | DOI | http ]
•  Junghyo Nah, David C. Dillen, Kamran M. Varahramyan, Sanjay K. Banerjee, and Emanuel Tutuc. Role of Confinement on Carrier Transport in Ge–SixGe1–x Core–Shell Nanowires. Nano Lett., 12(1):108-112, January 2012. [ bib | DOI | http ]
•  Mohamed M. Hilali, Shuqiang Yang, Mike Miller, Frank Xu, Sanjay Banerjee, and S. V. Sreenivasan. Enhanced photocurrent in thin-film amorphous silicon solar cells via shape controlled three-dimensional nanostructures. Nanotechnology, 23(40):405203, 2012. [ bib | DOI | http ]


•  Jung Hwan Yum, G. Bersuker, T. Akyol, D.A. Ferrer, Ming Lei, Keun Woo Park, T.W. Hudnall, M.C. Downer, C.W. Bielawski, E.T. Yu, J. Price, Jack C. Lee, and Sanjay K. Banerjee. Epitaxial ALD BeO: Efficient Oxygen Diffusion Barrier for EOT Scaling and Reliability Improvement. IEEE Transactions on Electron Devices, 58(12):4384-4392, December 2011. [ bib | DOI ]
•  Jiwon Chang, Priyamvada Jadaun, Leonard F. Register, Sanjay K. Banerjee, and Bhagawan Sahu. Dielectric capping effects on binary and ternary topological insulator surface states. Phys. Rev. B, 84(15):155105, October 2011. [ bib | DOI | http ]
•  Michael E. Ramón, Aparna Gupta, Chris Corbet, Domingo A. Ferrer, Hema C. P. Movva, Gary Carpenter, Luigi Colombo, George Bourianoff, Mark Doczy, Deji Akinwande, Emanuel Tutuc, and Sanjay K. Banerjee. CMOS-Compatible Synthesis of Large-Area, High-Mobility Graphene by Chemical Vapor Deposition of Acetylene on Cobalt Thin Films. ACS Nano, 5(9):7198-7204, September 2011. [ bib | DOI | http ]
•  Se-Hoon Lee, P. Majhi, D.A. Ferrer, Pui-Yee Hung, J. Huang, J. Oh, Wei-Yip Loh, B. Sassman, Byoung-Gi Min, Hsing-Huang Tseng, R. Harris, G. Bersuker, P.D. Kirsch, R. Jammy, and S.K. Banerjee. Impact of Millisecond Flash-Assisted Rapid Thermal Annealing on SiGe Heterostructure Channel pMOSFETs With a High-k/Metal Gate. IEEE Transactions on Electron Devices, 58(9):2917-2923, September 2011. [ bib | DOI ]
•  Bhagawan Sahu, Hongki Min, and Sanjay K. Banerjee. Edge saturation effects on the magnetism and band gaps in multilayer graphene ribbons and flakes. Phys. Rev. B, 84(7):075481, August 2011. [ bib | DOI | http ]
•  L.F. Register, M.M. Hasan, and Sanjay K. Banerjee. Stepped Broken-Gap Heterobarrier Tunneling Field-Effect Transistor for Ultralow Power and High Speed. IEEE Electron Device Letters, 32(6):743-745, June 2011. [ bib | DOI ]
•  Jiwon Chang, Leonard F. Register, Sanjay K. Banerjee, and Bhagawan Sahu. Density functional study of ternary topological insulator thin films. Phys. Rev. B, 83(23):235108, June 2011. [ bib | DOI | http ]
•  F. Ferdousi, M. Jamil, H. Liu, S. Kaur, D. Ferrer, L. Colombo, and S.K. Banerjee. Fullerene-Based Hybrid Devices for High-Density Nonvolatile Memory. IEEE Transactions on Nanotechnology, 10(3):572-575, May 2011. [ bib | DOI ]
•  Se-Hoon Lee, A. Nainani, Jungwoo Oh, Kanghoon Jeon, P.D. Kirsch, P. Majhi, L.F. Register, Sanjay K. Banerjee, and R. Jammy. on-State Performance Enhancement and Channel-Direction-Dependent Performance of a Biaxial Compressive Strained Quantum-Well pMOSFET Along and Channel Directions. IEEE Transactions on Electron Devices, 58(4):985-995, April 2011. [ bib | DOI ]
•  Tackhwi Lee, Kisik Choi, Takashi Ando, Dae-Gyu Park, Michael A. Gribelyuk, Unoh Kwon, and Sanjay K. Banerjee. Mechanism of VFB/VTH shift in Dysprosium incorporated HfO2 gate dielectric n-Type Metal-Oxide-Semiconductor devices. Journal of Vacuum Science & Technology B, 29(2):021209, March 2011. [ bib | DOI | http ]
•  Dharmendar Reddy, Leonard F. Register, Gary D. Carpenter, and Sanjay K. Banerjee. Graphene field-effect transistors. J. Phys. D: Appl. Phys., 44(31):313001, 2011. [ bib | DOI | http ]
•  Keng-Ming Liu, L.F. Register, and Sanjay K. Banerjee. Quantum Transport Simulation of Strain and Orientation Effects in Sub-20 nm Silicon-on-Insulator FinFETs. IEEE Transactions on Electron Devices, 58(1):4-10, January 2011. [ bib | DOI ]
•  Insun Jo, I-Kai Hsu, Yong J. Lee, Mir Mohammad Sadeghi, Seyoung Kim, Stephen Cronin, Emanuel Tutuc, Sanjay K. Banerjee, Zhen Yao, and Li Shi. Low-Frequency Acoustic Phonon Temperature Distribution in Electrically Biased Graphene. Nano Lett., 11(1):85-90, January 2011. [ bib | DOI | http ]
•  Priyamvada Jadaun, Sanjay K. Banerjee, Leonard F. Register, and Bhagawan Sahu. Density functional theory based study of graphene and dielectric oxide interfaces. J. Phys.: Condens. Matter, 23(50):505503, 2011. [ bib | DOI | http ]


•  R. Mishr, Bahniman Ghosh, and Sanjay K. Banerjee. Device and circuit performance evaluation and improvement of SiGe Tunnel FETs. In 2010 International Conference on Enabling Science and Nanotechnology (ESciNano), pages 1-2, December 2010. [ bib | DOI ]
•  Sanjay K. Banerjee, L.F. Register, E. Tutuc, D. Basu, Seyoung Kim, D. Reddy, and A.H. MacDonald. Graphene for CMOS and Beyond CMOS Applications. Proceedings of the IEEE, 98(12):2032-2046, December 2010. [ bib | DOI ]
•  Bhagawan Sahu, Hongki Min, and Sanjay K. Banerjee. Effects of edge magnetism and external electric field on energy gaps in multilayer graphene nanoribbons. Phys. Rev. B, 82(11):115426, September 2010. [ bib | DOI | http ]
•  Tackhwi Lee and Sanjay K. Banerjee. Device characteristics of HfON charge-trap layer nonvolatile memory. Journal of Vacuum Science & Technology B, 28(5):1005-1010, September 2010. [ bib | DOI | http ]
•  Jiwon Chang, A.K. Kapoor, L.F. Register, and Sanjay K. Banerjee. Analytical Model of Short-Channel Double-Gate JFETs. IEEE Transactions on Electron Devices, 57(8):1846-1855, August 2010. [ bib | DOI ]
•  D. Reddy, L.F. Register, E. Tutuc, and Sanjay K. Banerjee. Bilayer Pseudospin Field-Effect Transistor: Applications to Boolean Logic. IEEE Transactions on Electron Devices, 57(4):755-764, April 2010. [ bib | DOI ]
•  Se-Hoon Lee, A. Nainani, Jungwoo Oh, P. Kirsch, Sanjay K. Banerjee, and R. Jammy. Hole band anisotropy effect on ON-state performance of biaxial compressive strained SiGe-based short channel QW pMOSFETs: Experimental observations. In 2010 International Symposium on VLSI Technology Systems and Applications (VLSI-TSA), pages 126-127, April 2010. [ bib | DOI ]
•  En-Shao Liu, N. Jain, K.M. Varahramyan, Junghyo Nah, Sanjay K. Banerjee, and E. Tutuc. Role of Metal –Semiconductor Contact in Nanowire Field-Effect Transistors. IEEE Transactions on Nanotechnology, 9(2):237-242, March 2010. [ bib | DOI ]
•  Junghyo Nah, En-Shao Liu, K.M. Varahramyan, D. Shahrjerdi, Sanjay K. Banerjee, and E. Tutuc. Scaling Properties of – Core –Shell Nanowire Field-Effect Transistors. IEEE Transactions on Electron Devices, 57(2):491-495, February 2010. [ bib | DOI ]
•  Bhagawan Sahu, Hongki Min, and Sanjay K. Banerjee. Effects of magnetism and electric field on the energy gap of bilayer graphene nanoflakes. Phys. Rev. B, 81(4):045414, January 2010. [ bib | DOI | http ]
•  Feng Li, Se-Hoon Lee, Zhao Fang, P. Majhi, Qiming Zhang, Sanjay K. Banerjee, and S. Datta. Flicker-Noise Improvement in 100-nm Strained Quantum-Well Transistors Using Ultrathin Si Cap Layer. IEEE Electron Device Letters, 31(1):47-49, January 2010. [ bib | DOI ]
•  Mustafa Jamil, En-Shao Liu, Fahmida Ferdousi, Joseph P. Donnelly, Emanuel Tutuc, and Sanjay K. Banerjee. Effects of Si-cap thickness and temperature on device performance of Si/Ge 1− x C x /Si p-MOSFETs. Semicond. Sci. Technol., 25(4):045005, 2010. [ bib | DOI | http ]