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@article{chen2017carrier, title = {Carrier Trapping by Oxygen Impurities in Molybdenum Diselenide}, author = {Chen, Ke and Roy, Anupam and Rai, Amritesh and Valsaraj, Amithraj and Meng, Xianghai and He, Feng and Xu, Xiaochuan and Register, Leonard F and Banerjee, Sanjay and Wang, Yaguo}, journal = {ACS applied materials \& interfaces}, volume = {10}, number = {1}, pages = {1125--1131}, year = {2017}, publisher = {ACS Publications}, month = {December}, doi = {10.1021/acsami.7b15478}, url = {https://doi.org/10.1021/acsami.7b15478} }
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@article{chen2017experimental, title = {Experimental evidence of exciton capture by mid-gap defects in CVD grown monolayer MoSe 2}, author = {Chen, Ke and Ghosh, Rudresh and Meng, Xianghai and Roy, Anupam and Kim, Joon-Seok and He, Feng and Mason, Sarah C and Xu, Xiaochuan and Lin, Jung-Fu and Akinwande, Deji and others}, journal = {npj 2D Materials and Applications}, volume = {1}, number = {1}, pages = {15}, year = {2017}, publisher = {Nature Publishing Group}, month = {June}, doi = {10.1038/s41699-017-0019-1}, url = {https://doi.org/10.1038/s41699-017-0019-1} }
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@inproceedings{Lin_universal_2017, author = {Chih-Yang Lin and Ying-Chen Chen and Meiqi Guo and Chih-Hung Pan and Fu-Yuan Jin and Yi-Ting Tseng and Cheng Chih Hsieh and Xiaohan Wu and Min-Chen Chen and Yao-Feng Chang and Fei Zhou and B. Fowler and Kuan-Chang Chang and Tsung-Ming Tsai and Ting-Chang Chang and Yonggang Zhao and S. M. Sze and S. Banerjee and J. C. Lee}, booktitle = {2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)}, title = {A universal model for interface-type threshold switching phenomena by comprehensive study of Vanadium oxide-based selector}, year = {2017}, pages = {1-2}, keywords = {current density;semiconductor device models;vanadium compounds;MIT metallic state modulation;SCM applications;TS phenomena;VOx;current density;electrical induced threshold switching phenomena;energy barrier;interface-type threshold switching phenomena;resistance evolution;storage-class memory;thermal induced threshold switching phenomena;thermal temperature;universal model;vanadium oxide-based selector characteristics;Contacts;Guidelines;Random access memory;Selector;Threshold Switching;VOx}, doi = {10.1109/VLSI-TSA.2017.7942474}, month = {April} }
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