@article{kim2017towards,
title = {Towards band structure and band offset engineering of monolayer Mo (1- x) W (x) S2 via Strain},
author = {Kim, Joon-Seok and Ahmad, Rafia and Pandey, Tribhuwan and Rai, Amritesh and Feng, Simin and Yang, Jing and Lin, Zhong and Terrones, Mauricio and Banerjee, Sanjay K and Singh, Abhishek K and others},
journal = {2D Materials},
volume = {5},
number = {1},
pages = {015008},
year = {2017},
publisher = {IOP Publishing},
month = {October},
doi = {10.1088/2053-1583/aa8e71},
url = {https://doi.org/10.1088/2053-1583/aa8e71}
}
@article{park2017defect,
title = {Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface},
author = {Park, Jun Hong and Sanne, Atresh and Guo, Yuzheng and Amani, Matin and Zhang, Kehao and Movva, Hema CP and Robinson, Joshua A and Javey, Ali and Robertson, John and Banerjee, Sanjay K and others},
journal = {Science Advances},
volume = {3},
number = {10},
pages = {e1701661},
year = {2017},
publisher = {American Association for the Advancement of Science},
month = {October},
doi = {10.1126/sciadv.1701661},
url = {https://doi.org/10.1126/sciadv.1701661}
}
@article{chen2017carrier,
title = {Carrier Trapping by Oxygen Impurities in Molybdenum Diselenide},
author = {Chen, Ke and Roy, Anupam and Rai, Amritesh and Valsaraj, Amithraj and Meng, Xianghai and He, Feng and Xu, Xiaochuan and Register, Leonard F and Banerjee, Sanjay and Wang, Yaguo},
journal = {ACS applied materials \& interfaces},
volume = {10},
number = {1},
pages = {1125--1131},
year = {2017},
publisher = {ACS Publications},
month = {December},
doi = {10.1021/acsami.7b15478},
url = {https://doi.org/10.1021/acsami.7b15478}
}
@article{mou2017bilayer,
title = {Bilayer Pseudospin Junction Transistor (BiSJT) for “Beyond-CMOS” Logic},
author = {Mou, Xuehao and Register, Leonard F and MacDonald, Allan H and Banerjee, Sanjay K},
journal = {IEEE Transactions on Electron Devices},
volume = {64},
number = {11},
pages = {4759--4762},
year = {2017},
publisher = {IEEE},
month = {September},
doi = {10.1109/TED.2017.2751560},
url = {https://doi.org/10.1109/TED.2017.2751560}
}
@article{mohammed2017res2,
title = {ReS2-based interlayer tunnel field effect transistor},
author = {Mohammed, Omar B and Movva, Hema CP and Prasad, Nitin and Valsaraj, Amithraj and Kang, Sangwoo and Corbet, Chris M and Taniguchi, Takashi and Watanabe, Kenji and Register, Leonard F and Tutuc, Emanuel and others},
journal = {Journal of Applied Physics},
volume = {122},
number = {24},
pages = {245701},
year = {2017},
publisher = {AIP Publishing},
month = {December},
doi = {10.1063/1.5004038},
url = {https://doi.org/10.1063/1.5004038}
}
@article{kang2017interlayer,
title = {Interlayer tunnel field-effect transistor (ITFET): physics, fabrication and applications},
author = {Kang, Sangwoo and Mou, Xuehao and Fallahazad, Babak and Prasad, Nitin and Wu, Xian and Valsaraj, Amithraj and Movva, Hema CP and Kim, Kyounghwan and Tutuc, Emanuel and Register, Leonard F and others},
journal = {Journal of Physics D: Applied Physics},
volume = {50},
number = {38},
pages = {383002},
year = {2017},
publisher = {IOP Publishing},
month = {August},
dot = {10.1088/1361-6463/aa8047},
url = {https://doi.org/10.1088/1361-6463/aa8047}
}
@article{chen2017experimental,
title = {Experimental evidence of exciton capture by mid-gap defects in CVD grown monolayer MoSe 2},
author = {Chen, Ke and Ghosh, Rudresh and Meng, Xianghai and Roy, Anupam and Kim, Joon-Seok and He, Feng and Mason, Sarah C and Xu, Xiaochuan and Lin, Jung-Fu and Akinwande, Deji and others},
journal = {npj 2D Materials and Applications},
volume = {1},
number = {1},
pages = {15},
year = {2017},
publisher = {Nature Publishing Group},
month = {June},
doi = {10.1038/s41699-017-0019-1},
url = {https://doi.org/10.1038/s41699-017-0019-1}
}
@article{majumder2017interfacial,
title = {Interfacial reactions at Fe/topological insulator spin contacts},
author = {Majumder, Sarmita and Jarvis, Karalee and Banerjee, Sanjay K and Kavanagh, Karen L},
journal = {Journal of Vacuum Science \& Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena},
volume = {35},
number = {4},
pages = {04F105},
year = {2017},
month = {June},
publisher = {AVS},
doi = {10.1116/1.4991331},
url = {https://doi.org/10.1116/1.4991331}
}
@article{trivedi_versatile_2017,
author = {Trivedi, Tanuj and Roy, Anupam and Movva, Hema C. P. and Walker, Emily S. and Bank, Seth R. and Neikirk, Dean P. and Banerjee, Sanjay K.},
title = {Versatile Large-Area Custom-Feature van der Waals Epitaxy of Topological Insulators},
journal = {ACS Nano},
volume = {x},
number = {x},
pages = {ASAP},
month = {July},
year = {2017},
doi = {10.1021/acsnano.7b03894},
url = {http://dx.doi.org/10.1021/acsnano.7b03894}
}
@article{hsieh_short-term_2017,
author = {C. C. Hsieh and Y. F. Chang and Y. Jeon and A. Roy and D. Shahrjerdi and S. K. Banerjee},
journal = {IEEE Electron Device Letters},
title = {Short-Term Relaxation in {HfO}$_x$/{CeO}$_x$ Resistive Random Access Memory With Selector},
year = {2017},
volume = {38},
number = {7},
pages = {871-874},
keywords = {Degradation;Hafnium compounds;Programming;Random access memory;Reliability;Resistance;Switches;RRAM;high-? dielectrics;programming algorithms;reliability},
doi = {10.1109/LED.2017.2710955},
issn = {0741-3106},
month = {July}
}
@article{movva_density_2017,
title = {Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer {WSe}$_2$},
author = {Movva, Hema C. P. and Fallahazad, Babak and Kim, Kyounghwan and Larentis, Stefano and Taniguchi, Takashi and Watanabe, Kenji and Banerjee, Sanjay K. and Tutuc, Emanuel},
journal = {Phys. Rev. Lett.},
volume = {118},
issue = {24},
pages = {247701},
numpages = {5},
year = {2017},
month = {June},
publisher = {American Physical Society},
doi = {10.1103/PhysRevLett.118.247701},
url = {https://link.aps.org/doi/10.1103/PhysRevLett.118.247701}
}
@article{roy_intra-domain_2017,
title = {Intra-domain periodic defects in monolayer {MoS}$_{2}$},
volume = {110},
issn = {0003-6951, 1077-3118},
url = {http://aip.scitation.org/doi/10.1063/1.4983789},
doi = {10.1063/1.4983789},
language = {en},
number = {20},
urldate = {2017-05-29},
journal = {Applied Physics Letters},
author = {Roy, Anupam and Ghosh, Rudresh and Rai, Amritesh and Sanne, Atresh and Kim, Kyounghwan and Movva, Hema C. P. and Dey, Rik and Pramanik, Tanmoy and Chowdhury, Sayema and Tutuc, Emanuel and Banerjee, Sanjay K.},
month = may,
year = {2017},
pages = {201905}
}
@article{larentis_reconfigurable_2017,
title = {Reconfigurable {Complementary} {Monolayer} {MoTe}$_{2}$ {Field}-{Effect} {Transistors} for {Integrated} {Circuits}},
volume = {11},
issn = {1936-0851, 1936-086X},
url = {http://pubs.acs.org/doi/abs/10.1021/acsnano.7b01306},
doi = {10.1021/acsnano.7b01306},
language = {en},
number = {5},
urldate = {2017-05-29},
journal = {ACS Nano},
author = {Larentis, Stefano and Fallahazad, Babak and Movva, Hema C. P. and Kim, Kyounghwan and Rai, Amritesh and Taniguchi, Takashi and Watanabe, Kenji and Banerjee, Sanjay K. and Tutuc, Emanuel},
month = may,
year = {2017},
pages = {4832--4839}
}
@article{ahn_graphene-2_2017,
title = {Graphene-{Al}$_2${O}$_{3}$ -silicon heterojunction solar cells on flexible silicon substrates},
volume = {121},
issn = {0021-8979, 1089-7550},
url = {http://aip.scitation.org/doi/10.1063/1.4981880},
doi = {10.1063/1.4981880},
language = {en},
number = {16},
urldate = {2017-05-29},
journal = {Journal of Applied Physics},
author = {Ahn, Jaehyun and Chou, Harry and Banerjee, Sanjay K.},
month = apr,
year = {2017},
pages = {163105}
}
@inproceedings{Lin_universal_2017,
author = {Chih-Yang Lin and Ying-Chen Chen and Meiqi Guo and Chih-Hung Pan and Fu-Yuan Jin and Yi-Ting Tseng and Cheng Chih Hsieh and Xiaohan Wu and Min-Chen Chen and Yao-Feng Chang and Fei Zhou and B. Fowler and Kuan-Chang Chang and Tsung-Ming Tsai and Ting-Chang Chang and Yonggang Zhao and S. M. Sze and S. Banerjee and J. C. Lee},
booktitle = {2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)},
title = {A universal model for interface-type threshold switching phenomena by comprehensive study of Vanadium oxide-based selector},
year = {2017},
pages = {1-2},
keywords = {current density;semiconductor device models;vanadium compounds;MIT metallic state modulation;SCM applications;TS phenomena;VOx;current density;electrical induced threshold switching phenomena;energy barrier;interface-type threshold switching phenomena;resistance evolution;storage-class memory;thermal induced threshold switching phenomena;thermal temperature;universal model;vanadium oxide-based selector characteristics;Contacts;Guidelines;Random access memory;Selector;Threshold Switching;VOx},
doi = {10.1109/VLSI-TSA.2017.7942474},
month = {April}
}
@article{dey_detection_2017,
title = {Detection of current induced spin polarization in epitaxial {Bi}$_{2}${Te}$_{3}$ thin film},
volume = {110},
issn = {0003-6951, 1077-3118},
url = {http://aip.scitation.org/doi/10.1063/1.4978691},
doi = {10.1063/1.4978691},
language = {en},
number = {12},
urldate = {2017-05-29},
journal = {Applied Physics Letters},
author = {Dey, Rik and Roy, Anupam and Pramanik, Tanmoy and Rai, Amritesh and Heon Shin, Seung and Majumder, Sarmita and Register, Leonard F. and Banerjee, Sanjay K.},
month = mar,
year = {2017},
pages = {122403}
}
@article{pramanik_angular_2017,
title = {Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy},
volume = {437},
issn = {03048853},
url = {http://linkinghub.elsevier.com/retrieve/pii/S0304885317303372},
doi = {10.1016/j.jmmm.2017.04.039},
language = {en},
urldate = {2017-05-29},
journal = {Journal of Magnetism and Magnetic Materials},
author = {Pramanik, Tanmoy and Roy, Anupam and Dey, Rik and Rai, Amritesh and Guchhait, Samaresh and Movva, Hema C.P. and Hsieh, Cheng-Chih and Banerjee, Sanjay K.},
month = sep,
year = {2017},
pages = {72--77}
}
@article{ghosh_simulation_2017,
title = {A simulation study of voltage-assisted low-energy switching of a perpendicular anisotropy ferromagnet on a topological insulator},
volume = {16},
issn = {1569-8025, 1572-8137},
url = {http://link.springer.com/10.1007/s10825-016-0951-x},
doi = {10.1007/s10825-016-0951-x},
language = {en},
number = {1},
urldate = {2017-05-29},
journal = {Journal of Computational Electronics},
author = {Ghosh, Bahniman and Dey, Rik and Register, Leonard F. and Banerjee, Sanjay K.},
month = mar,
year = {2017},
pages = {120--126}
}
@article{sonde_ultrathin_2017,
title = {Ultrathin, wafer-scale hexagonal boron nitride on dielectric surfaces by diffusion and segregation mechanism},
volume = {4},
issn = {2053-1583},
url = {http://stacks.iop.org/2053-1583/4/i=2/a=025052?key=crossref.adadc7e47cfe58e26428fdd873ba34d1},
doi = {10.1088/2053-1583/aa6562},
number = {2},
urldate = {2017-05-29},
journal = {2D Materials},
author = {Sonde, Sushant and Dolocan, Andrei and Lu, Ning and Corbet, Chris and Kim, Moon J and Tutuc, Emanuel and Banerjee, Sanjay K and Colombo, Luigi},
month = mar,
year = {2017},
pages = {025052}
}
@article{hsu_laser_2017,
title = {Laser {Spike} {Annealing} for {Shallow} {Junctions} in {Ge} {CMOS}},
volume = {64},
issn = {0018-9383, 1557-9646},
url = {http://ieeexplore.ieee.org/document/7797159/},
doi = {10.1109/TED.2016.2635625},
number = {2},
urldate = {2017-05-29},
journal = {IEEE Transactions on Electron Devices},
author = {Hsu, William and Wen, Feng and Wang, Xiaoru and Wang, Yun and Dolocan, Andrei and Roy, Anupam and Kim, Taegon and Tutuc, Emanuel and Banerjee, Sanjay K.},
month = feb,
year = {2017},
pages = {346--352}
}
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