@article{zhai_vertical_2014,
title = {Vertical {finFET} with {Salicide} {Contact} for {Potential} {Power} {Applications}},
volume = {3},
issn = {2162-8769, 2162-8777},
url = {http://jss.ecsdl.org/content/3/10/Q203},
doi = {10.1149/2.0151410jss},
abstract = {We report a vertically diffused finFET with high-κ gate dielectric and metal gate for potential power applications. Electron beam lithography and deep silicon reactive ion etching (RIE) were utilized to form the fins, followed by atomic layer deposition of Al2O3 high-k dielectric and TiN to form the metal gate. Self-aligned silicide (salicide) was formed on the top of the fins to lower the contact resistance. The devices exhibit excellent performance with steep sub-threshold swing (SS), low drain-induced barrier lowering (DIBL) and a high ION/IOFF ratio. The breakdown voltage test (BVDSS) was also characterized for potential power applications.},
language = {en},
number = {10},
urldate = {2016-02-16},
journal = {ECS J. Solid State Sci. Technol.},
author = {Zhai, Yujia and Mathew, Leo and Rao, Rajesh and Sreenivasan, S. V. and Willson, C. Grant and Banerjee, Sanjay K.},
month = jan,
year = {2014},
pages = {Q203--Q206}
}
@article{zhai_high-performance_2014,
title = {High-{Performance} {Vertical} {Gate}-{All}-{Around} {Silicon} {Nanowire} {FET} {With} {High}- /{Metal} {Gate}},
volume = {61},
issn = {0018-9383},
doi = {10.1109/TED.2014.2353658},
abstract = {We present a vertical gate-all-around Si nanowire (SiNW) metal-oxide-semiconductor field-effect transistor with high-κ dielectric and TiN metal gate. The process flow is fully compatible with CMOS technologies. SiNWs are fabricated by deep Si reactive ion etching, gate-stack is formed by atomic layer deposition, and metal salicide is utilized as drain contact. The fabricated p-type gate-all-around SiNW metal-oxide-semiconductor field-effect transistors that have a gate length of 320 nm exhibit excellent characteristics with ION/IOFF {\textgreater} 104, subthreshold slope of 87 mV/decade, and 25 mV/V of drain-induced barrier lowering. Low-temperature characteristics are also presented. The demonstrated devices have potential applications in novel low-power logic circuits and as selection transistors for 4F2 cross-point memory cells.},
number = {11},
journal = {IEEE Transactions on Electron Devices},
author = {Zhai, Yujia and Mathew, L. and Rao, R. and Palard, M. and Chopra, S. and Ekerdt, J.G. and Register, L.F. and Banerjee, S.K.},
month = nov,
year = {2014},
keywords = {4F2 cross-point memory cells, atomic layer deposition, CMOS integrated circuits, CMOS technologies, CMOS technology, deep Si etching, Dielectrics, drain-induced barrier, Elemental semiconductors, FET, Field effect transistors, gate-all-around, high- (kappa ) /metal gate, high-k dielectric thin films, high-k/metal gate, high-κ dielectric, logic circuits, Logic gates, low-power electronics, low-power logic circuits, metal gate, metal-oxide semiconductor field effect transistor, metal salicide, MOSFET, nanowire, nanowires, reactive ion etching, salicide, Si, Silicon, SiNW, size 320 nm, sputter etching, TiN, titanium compounds, vertical gate-all-around silicon nanowire},
pages = {3896--3900}
}
@article{saha_improved_2014,
title = {Improved {Cleaning} {Process} for {Textured} ∼25 μm {Flexible} {Mono}-{Crystalline} {Silicon} {Heterojunction} {Solar} {Cells} with {Metal} {Backing}},
volume = {3},
issn = {2162-8769, 2162-8777},
url = {http://jss.ecsdl.org/content/3/7/Q142},
doi = {10.1149/2.0041407jss},
abstract = {An improved cleaning process is developed to remove front surface contamination for single heterojunction solar cells on textured surfaces on ∼25 μm thick exfoliated, flexible mono-crystalline silicon. The process is very effective in cleaning metallic and organic residues, without introducing additional contamination or degrading the supporting back metal used for ultrathin substrate handling. Quantitative analysis of the Auger electron spectra shows significant potassium contamination reduction (∼0.89\% atomic) using the new cleaning process. An open-circuit voltage enhancement of 22 mV and an absolute 1.5\% increase in conversion efficiency are observed with the new cleaning procedure for the exfoliated thin solar cells.},
language = {en},
number = {7},
urldate = {2016-02-12},
journal = {ECS J. Solid State Sci. Technol.},
author = {Saha, Sayan and Hilali, Mohamed M. and Onyegam, Emmanuel U. and Sonde, Sushant and Rao, Rajesh A. and Mathew, Leo and Upadhyaya, Ajay and Banerjee, Sanjay K.},
month = jan,
year = {2014},
pages = {Q142--Q145}
}
@article{ramon_impact_2014,
title = {Impact of contact and access resistances in graphene field-effect transistors on quartz substrates for radio frequency applications},
volume = {104},
issn = {0003-6951, 1077-3118},
url = {http://scitation.aip.org/content/aip/journal/apl/104/7/10.1063/1.4866332},
doi = {10.1063/1.4866332},
abstract = {High-frequency performance of graphene field-effect transistors (GFETs) has been limited largely by parasitic resistances, including contact resistance (RC ) and access resistance (RA ). Measurement of short-channel (500 nm) GFETs with short (200 nm) spin-on-doped source/drain access regions reveals negligible change in transit frequency (fT ) after doping, as compared to ∼23\% fT improvement for similarly sized undoped GFETs measured at low temperature, underscoring the impact of RC on high-frequency performance. DC measurements of undoped/doped short and long-channel GFETs highlight the increasing impact of RA for larger GFETs. Additionally, parasitic capacitances were minimized by device fabrication using graphene transferred onto low-capacitance quartz substrates.},
number = {7},
urldate = {2016-02-16},
journal = {Applied Physics Letters},
author = {Ramón, Michael E. and Movva, Hema C. P. and Chowdhury, Sk Fahad and Parrish, Kristen N. and Rai, Amritesh and Magnuson, Carl W. and Ruoff, Rodney S. and Akinwande, Deji and Banerjee, Sanjay K.},
month = feb,
year = {2014},
keywords = {contact resistance, Dirac equation, Doping, graphene, quartz},
pages = {073115}
}
@article{pramanik_micromagnetic_2014,
title = {Micromagnetic simulations of spin-wave normal modes and the spin-transfer-torque driven magnetization dynamics of a ferromagnetic cross},
volume = {115},
issn = {0021-8979, 1089-7550},
url = {http://scitation.aip.org/content/aip/journal/jap/115/17/10.1063/1.4863384},
doi = {10.1063/1.4863384},
abstract = {We studied spin-transfer-torque (STT) switching of a cross-shaped magnetic tunnel junction in a recent report [Roy et al., J. Appl. Phys. 113, 223904 (2013)]. In that structure, the free layer is designed to have four stable energy states using the shape anisotropy of a cross. STT switching showed different regions with increasing current density. Here, we employ the micromagnetic spectral mapping technique in an attempt to understand how the asymmetry of cross dimensions and spin polarization direction of the injected current affect the magnetization dynamics. We compute spatially averaged frequency-domain spectrum of the time-domain magnetization dynamics in the presence of the current-induced STT term. At low currents, the asymmetry of polarization direction and that of the arms are observed to cause a splitting of the excited frequency modes. Higher harmonics are also observed, presumably due to spin-wave wells caused by the regions of spatially non-uniform effective magnetic field. The results could be used towards designing a multi-bit-per-cell STT-based random access memory with an improved storage density.},
number = {17},
urldate = {2016-02-12},
journal = {Journal of Applied Physics},
author = {Pramanik, Tanmoy and Roy, Urmimala and Tsoi, Maxim and Register, Leonard F. and Banerjee, Sanjay K.},
month = may,
year = {2014},
keywords = {Demagnetization, Magnetic fields, magnetization dynamics, Polarization, Spin waves},
pages = {17D123}
}
@article{onyegam_realization_2014,
title = {Realization of dual-heterojunction solar cells on ultra-thin ∼25 μm, flexible silicon substrates},
volume = {104},
issn = {0003-6951, 1077-3118},
url = {http://scitation.aip.org/content/aip/journal/apl/104/15/10.1063/1.4871503},
doi = {10.1063/1.4871503},
abstract = {Silicon heterojunction (HJ) solar cells with different rear passivation and contact designs were fabricated on ∼25 μm semiconductor-on-metal (SOM) exfoliated substrates. It was found that the performance of these cells is limited by recombination at the rear-surface. Employing the dual-HJ architecture resulted in the improvement of open-circuit voltage (Voc) from 605 mV (single-HJ) to 645 mV with no front side intrinsic amorphous silicon (i-layer) passivation. Addition of un-optimized front side i-layer passivation resulted in further enhancement in Voc to 662 mV. Pathways to achieving further improvement in the performance of HJ solar cells on ultra-thin SOM substrates are discussed.},
number = {15},
urldate = {2016-02-12},
journal = {Applied Physics Letters},
author = {Onyegam, Emmanuel U. and Sarkar, Dabraj and Hilali, Mohamed M. and Saha, Sayan and Mathew, Leo and Rao, Rajesh A. and Smith, Ryan S. and Xu, Dewei and Jawarani, Dharmesh and Garcia, Ricardo and Ainom, Moses and Banerjee, Sanjay K.},
month = apr,
year = {2014},
keywords = {Doping, Passivation, Quantum mechanics, Solar cells, Surface passivation},
pages = {153902}
}
@inproceedings{mou_interplay_2014,
title = {Interplay among {Bilayer} {pseudoSpin} field-effect transistor ({BiSFET}) performance, {BiSFET} scaling and condensate strength},
doi = {10.1109/SISPAD.2014.6931625},
abstract = {It has been proposed that superfluid excitonic condensates may be possible in dielectrically separated graphene layers or other two-dimensional materials. This possibility was the basis for the proposed ultra-low power Bilayer pseudoSpin Field-effect Transistor (BiSFET). Previously, we developed an atomistic tight-binding quantum transport simulator, including the non-local exchange interaction, and used it to demonstrate the essential excitonic superfluid transport physics which underlies the proposed BiSFET in presence of such a condensate. Here we report on extension of that work to analyze dependencies on device scaling and the condensate strength of BiSFET performance and required device parameters including interlayer conductance, and critical current and voltage.},
booktitle = {2014 {International} {Conference} on {Simulation} of {Semiconductor} {Processes} and {Devices} ({SISPAD})},
author = {Mou, Xuehao and Register, L.F. and Banerjee, S.K.},
month = sep,
year = {2014},
keywords = {atomistic tight-binding quantum transport simulator, BiSFET, condensate strength, Couplings, critical current and voltage, Critical current density (superconductivity), device parameters, device scaling, dielectrically separated graphene layers, electric admittance, Elementary particle exchange interactions, exciton condensate, excitonic superfluid transport physics, excitons, Field effect transistors, Fock exchange, graphene, low-power electronics, nonlocal exchange interaction, quantum transport, Registers, superfluid excitonic condensates, Transistors, two-dimensional materials, ultra-low power bilayer pseudospin field-effect transistor},
pages = {309--312}
}
@article{min_atomic_2014,
title = {Atomic layer etching of {BeO} using {BCl}3/{Ar} for the interface passivation layer of {III}–{V} {MOS} devices},
volume = {114},
issn = {0167-9317},
url = {http://www.sciencedirect.com/science/article/pii/S0167931713006254},
doi = {10.1016/j.mee.2013.10.003},
abstract = {BeO was investigated as the interface passivation layer (IPL) between a high-k dielectric and a III–V compound semiconductor substrate in metal-oxide-semiconductor (MOS) devices. One of the critical issues facing the fabrication of next generation MOS devices is the minimization of damage to the III–V semiconductor substrate during the etching of the thin IPL. In this study, atomic layer etching (ALET) was investigated for etching of BeO as the IPL on a GaAs substrate to control the etch depth precisely and to minimize the damage to the III–V semiconductor substrate. By using ALET to etch BeO, which uses BCl3 as the adsorption gas for the formation of chloride compounds (Be–Cl and BCl–O) and Ar as the desorption gas for the removal of the chloride compounds, a self-limited, one-monolayer etch rate of about 0.75 Å/cycle was achieved with no increase of surface roughness and without change of surface composition. Moreover, under the BeO ALET conditions, which are able to precisely stop etching over the GaAs substrate after removing BeO, the exposed GaAs substrate showed surface composition and surface roughness similar to those of the as-received GaAs substrate.},
urldate = {2016-02-16},
journal = {Microelectronic Engineering},
author = {Min, K. S. and Kang, S. H. and Kim, J. K. and Yum, J. H. and Jhon, Y. I. and Hudnall, Todd W. and Bielawski, C. W. and Banerjee, S. K. and Bersuker, G. and Jhon, M. S. and Yeom, G. Y.},
month = feb,
year = {2014},
keywords = {Atomic layer etching, III–V MOS device, Interface passivation layer, Plasma induced damage},
pages = {121--125}
}
@article{koh_investigation_2014,
title = {Investigation of atomic layer deposited beryllium oxide material properties for high-k dielectric applications},
volume = {32},
issn = {2166-2746, 2166-2754},
url = {http://scitation.aip.org/content/avs/journal/jvstb/32/3/10.1116/1.4867436},
doi = {10.1116/1.4867436},
abstract = {Beryllium oxide (BeO) is a wide band gap alkaline earth oxide material that has recently shown significant promise as a high-k dielectric material in Si and III-V metal–oxide–semiconductor field effect transistor devices. However, many of the basic material properties for BeO thin films utilized in these devices have not been reported or remain in question. In this regard, the authors report an investigation of the chemical, physical, electrical, and mechanical properties of BeO thin films formed via atomic layer deposition (ALD). Combined Rutherford backscattering and nuclear reaction analysis measurements show that ALD BeO thin films exhibit a low hydrogen content (\<5\%) and are nearly stoichiometric (Be/O ≅ 1.1 ± 0.05). Reflection electron energy loss spectroscopy measurements reveal a wide band gap of 8.0 ± 0.14 eV, and nanoindentation measurements show that ALD BeO has a high Young\'s modulus and hardness of 330 ± 30 and 33 ± 5 GPa, respectively.},
number = {3},
urldate = {2016-02-16},
journal = {Journal of Vacuum Science \& Technology B},
author = {Koh, Donghyi and Yum, Jung-Hwan and Banerjee, Sanjay K. and Hudnall, Todd W. and Bielawski, Christopher and Lanford, William A. and French, Benjamin L. and French, Marc and Henry, Patrick and Li, Han and Kuhn, Markus and King, Sean W.},
month = may,
year = {2014},
keywords = {atomic layer deposition, Band gap, Dielectrics, Dielectric thin films, Thin film structure},
pages = {03D117}
}
@article{koh_lg_2014,
title = {Lg = 100 nm {In}0.7Ga0.3As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer},
volume = {104},
issn = {0003-6951, 1077-3118},
url = {http://scitation.aip.org/content/aip/journal/apl/104/16/10.1063/1.4871504},
doi = {10.1063/1.4871504},
abstract = {In this study, we have fabricated nanometer-scale channel length quantum-well (QW) metal-oxide-semiconductor field effect transistors (MOSFETs) incorporating beryllium oxide (BeO) as an interfacial layer. BeO has high thermal stability, excellent electrical insulating characteristics, and a large band-gap, which make it an attractive candidate for use as a gate dielectric in making MOSFETs. BeO can also act as a good diffusion barrier to oxygen owing to its small atomic bonding length. In this work, we have fabricated In0.53Ga0.47As MOS capacitors with BeO and Al2O3 and compared their electrical characteristics. As interface passivation layer, BeO/HfO2 bilayer gate stack presented effective oxide thickness less 1 nm. Furthermore, we have demonstrated In0.7Ga0.3As QW MOSFETs with a BeO/HfO2 dielectric, showing a sub-threshold slope of 100 mV/dec, and a transconductance (gm,max) of 1.1 mS/μm, while displaying low values of gate leakage current. These results highlight the potential of atomic layer deposited BeO for use as a gate dielectric or interface passivation layer for III–V MOSFETs at the 7 nm technology node and/or beyond.},
number = {16},
urldate = {2016-02-16},
journal = {Applied Physics Letters},
author = {Koh, D. and Kwon, H. M. and Kim, T.-W. and Kim, D.-H. and Hudnall, Todd W. and Bielawski, Christopher W. and Maszara, W. and Veksler, D. and Gilmer, D. and Kirsch, P. D. and Banerjee, S. K.},
month = apr,
year = {2014},
keywords = {atomic layer deposition, Dielectrics, MOSFETs, Ozone, quantum wells},
pages = {163502}
}
@article{hsu_thin_2014,
title = {Thin, relaxed {Si}1−{xGex} virtual substrates on {Si} grown using {C}-doped {Ge} buffers},
volume = {105},
issn = {0003-6951, 1077-3118},
url = {http://scitation.aip.org/content/aip/journal/apl/105/15/10.1063/1.4898697},
doi = {10.1063/1.4898697},
abstract = {Ultrathin C-doped Ge (Ge:C) buffers are used as effective buffer layers to grow thin and smooth Si1−x Ge x relaxed virtual substrates on Si over a wide range of Ge content (x = 0.23, 0.38, 0.50, 0.65, 1) by ultrahigh vacuum chemical vapor deposition. High degree of relaxation (≥90\%) in thin Si1−x Ge x films (∼50 nm thick) is demonstrated using this approach without additional annealing. Raman data suggest that the Ge:C buffers are still under compressive stress with the subsequent Si1−x Ge x layer growth. A low threading dislocation density of the order of ∼6 × 104 cm−2 is obtained from the relaxed 500-nm Si0.77 Ge 0.23 film grown using this method.},
number = {15},
urldate = {2016-02-12},
journal = {Applied Physics Letters},
author = {Hsu, William and Mantey, Jason and Hsieh, Cheng-Chih and Roy, Anupam and Banerjee, Sanjay K.},
month = oct,
year = {2014},
keywords = {Elemental semiconductors, Epitaxy, Germanium, Thin film growth, X-ray diffraction},
pages = {152107}
}
@article{hilali_light_2014,
title = {Light trapping in ultrathin 25 μm exfoliated {Si} solar cells},
volume = {53},
issn = {0003-6935, 1539-4522},
url = {https://www.osapublishing.org/abstract.cfm?URI=ao-53-27-6140},
doi = {10.1364/AO.53.006140},
language = {en},
number = {27},
urldate = {2016-02-12},
journal = {Applied Optics},
author = {Hilali, Mohamed M. and Saha, Sayan and Onyegam, Emmanuel and Rao, Rajesh and Mathew, Leo and Banerjee, Sanjay K.},
month = sep,
year = {2014},
pages = {6140}
}
@article{fiori_electronics_2014,
title = {Electronics based on two-dimensional materials},
volume = {9},
copyright = {© 2014 Nature Publishing Group, a division of Macmillan Publishers Limited. All Rights Reserved.},
issn = {1748-3387},
url = {http://www.nature.com/nnano/journal/v9/n10/abs/nnano.2014.207.html},
doi = {10.1038/nnano.2014.207},
abstract = {The compelling demand for higher performance and lower power consumption in electronic systems is the main driving force of the electronics industry's quest for devices and/or architectures based on new materials. Here, we provide a review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal–oxide–semiconductor switches. We focus on the performance limits and advantages of these materials and associated technologies, when exploited for both digital and analog applications, focusing on the main figures of merit needed to meet industry requirements. We also discuss the use of two-dimensional materials as an enabling factor for flexible electronics and provide our perspectives on future developments.
View full text},
language = {en},
number = {10},
urldate = {2016-02-11},
journal = {Nat Nano},
author = {Fiori, Gianluca and Bonaccorso, Francesco and Iannaccone, Giuseppe and Palacios, Tomás and Neumaier, Daniel and Seabaugh, Alan and Banerjee, Sanjay K. and Colombo, Luigi},
month = oct,
year = {2014},
keywords = {Electronic devices},
pages = {768--779}
}
@article{dey_strong_2014,
title = {Strong spin-orbit coupling and {Zeeman} spin splitting in angle dependent magnetoresistance of {Bi}2Te3},
volume = {104},
issn = {0003-6951, 1077-3118},
url = {http://scitation.aip.org/content/aip/journal/apl/104/22/10.1063/1.4881721},
doi = {10.1063/1.4881721},
abstract = {We have studied angle dependent magnetoresistance of Bi2Te3 thin film with field up to 9 T over 2–20 K temperatures. The perpendicular field magnetoresistance has been explained by the Hikami-Larkin-Nagaoka theory alone in a system with strong spin-orbit coupling, from which we have estimated the mean free path, the phase coherence length, and the spin-orbit relaxation time. We have obtained the out-of-plane spin-orbit relaxation time to be small and the in-plane spin-orbit relaxation time to be comparable to the momentum relaxation time. The estimation of these charge and spin transport parameters are useful for spintronics applications. For parallel field magnetoresistance, we have confirmed the presence of Zeeman effect which is otherwise suppressed in perpendicular field magnetoresistance due to strong spin-orbit coupling. The parallel field data have been explained using both the contributions from the Maekawa-Fukuyama localization theory for non-interacting electrons and Lee-Ramakrishnan theory of electron-electron interactions. The estimated Zeeman g-factor and the strength of Coulomb screening parameter agree well with the theory. Finally, the anisotropy in magnetoresistance with respect to angle has been described by the Hikami-Larkin-Nagaoka theory. This anisotropy can be used in anisotropic magnetic sensor applications.},
number = {22},
urldate = {2016-02-12},
journal = {Applied Physics Letters},
author = {Dey, Rik and Pramanik, Tanmoy and Roy, Anupam and Rai, Amritesh and Guchhait, Samaresh and Sonde, Sushant and Movva, Hema C. P. and Colombo, Luigi and Register, Leonard F. and Banerjee, Sanjay K.},
month = jun,
year = {2014},
keywords = {Magnetic fields, Magnetoresistance, Self organized systems, Semiclassical theories, Zeeman effect},
pages = {223111}
}
@article{corbet_oxidized_2014,
title = {Oxidized {Titanium} as a {Gate} {Dielectric} for {Graphene} {Field} {Effect} {Transistors} and {Its} {Tunneling} {Mechanisms}},
volume = {8},
issn = {1936-0851},
url = {http://dx.doi.org/10.1021/nn5038509},
doi = {10.1021/nn5038509},
abstract = {We fabricate and characterize a set of dual-gated graphene field effect transistors using a novel physical vapor deposition technique in which titanium is evaporated onto the graphene channel in 10 Å cycles and oxidized in ambient to form a top-gate dielectric. A combination of X-ray photoemission spectroscopy, ellipsometry, and transmission electron microscopy suggests that the titanium is oxidizing in situ to titanium dioxide. Electrical characterization of our devices yields a dielectric constant of ? = 6.9 with final mobilities above 5500 cm2/(V s). Low temperature analysis of the gate-leakage current in the devices gives a potential barrier of 0.78 eV in the conduction band and a trap depth of 45 meV below the conduction band.},
number = {10},
urldate = {2016-02-12},
journal = {ACS Nano},
author = {Corbet, Chris M. and McClellan, Connor and Kim, Kyounghwan and Sonde, Sushant and Tutuc, Emanuel and Banerjee, Sanjay K.},
month = oct,
year = {2014},
pages = {10480--10485}
}
@article{chang_ballistic_2014,
title = {Ballistic performance comparison of monolayer transition metal dichalcogenide {MX}2 ({M} = {Mo}, {W}; {X} = {S}, {Se}, {Te}) metal-oxide-semiconductor field effect transistors},
volume = {115},
issn = {0021-8979, 1089-7550},
url = {http://scitation.aip.org/content/aip/journal/jap/115/8/10.1063/1.4866872},
doi = {10.1063/1.4866872},
abstract = {We study the transport properties of monolayer MX2 (M = Mo, W; X = S, Se, Te) n- and p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic non-equilibrium Green\'s function simulations with an atomistic tight-binding Hamiltonian with hopping potentials obtained from density functional theory. We discuss the subthreshold slope, drain-induced barrier lowering (DIBL), as well as gate-induced drain leakage (GIDL) for different monolayer MX2 MOSFETs. We also report the possibility of negative differential resistance behavior in the output characteristics of nanoscale monolayer MX2 MOSFETs.},
number = {8},
urldate = {2016-02-12},
journal = {Journal of Applied Physics},
author = {Chang, Jiwon and Register, Leonard F. and Banerjee, Sanjay K.},
month = feb,
year = {2014},
keywords = {Band gap, Band structure, Monolayers, MOSFETs, Negative resistance},
pages = {084506}
}
@article{chang_atomistic_2014,
title = {Atomistic simulation of the electronic states of adatoms in monolayer {MoS}2},
volume = {104},
issn = {0003-6951, 1077-3118},
url = {http://scitation.aip.org/content/aip/journal/apl/104/14/10.1063/1.4870767},
doi = {10.1063/1.4870767},
abstract = {Using an ab initio density functional theory based electronic structure method, we study the effects of adatoms on the electronic properties of monolayer transition metal dichalcogenide Molybdenum-disulfide (MoS2). We consider the 1st (Li, Na, K) and 7th (F, Cl, Br) column atoms and metals (Sc, Ti, Ta, Mo, Pd, Pt, Ag, Au). Three high symmetry sites for the adatom on the surface of monolayer MoS2 are examined as starting points to search for the most energetically stable configuration for each adatom-monolayer MoS2 system, as well as the type of associated bonding. For the most stable adatom positions, we characterize the emergence of adatom-induced electronic states including any dopant states.},
number = {14},
urldate = {2016-02-12},
journal = {Applied Physics Letters},
author = {Chang, Jiwon and Larentis, Stefano and Tutuc, Emanuel and Register, Leonard F. and Banerjee, Sanjay K.},
month = apr,
year = {2014},
keywords = {Band gap, Doping, Gold, Molybdenum, Monolayers},
pages = {141603}
}
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