@inproceedings{wu_theoretical_2015,
title = {Theoretical study of the spontaneous electron-hole exciton condensates between n and p-type {MoS}2 monolayers, toward beyond {CMOS} applications},
doi = {10.1109/SISPAD.2015.7292274},
abstract = {We model equilibrium properties of possible room-temperature electron-hole exciton condensates formed between two dielectrically separated transition metal dichalcogenide (TMD) layers, MoS2 layers here, toward application to novel beyond CMOS devices. Our simulation method employs an interlayer Fock exchange interaction incorporated into an otherwise intra-layer tight-binding Hamiltonian within a maximally-localized Wannier function (MLWF) basis set.},
booktitle = {2015 {International} {Conference} on {Simulation} of {Semiconductor} {Processes} and {Devices} ({SISPAD})},
author = {Wu, Xian and Mou, Xuehao and Register, L.F. and Banerjee, S.K.},
month = sep,
year = {2015},
keywords = {bilayer, CMOS application, CMOS integrated circuits, complementary metal oxide semiconductor, Discrete Fourier transforms, Electric potential, electron-hole exciton condensate, Elementary particle exchange interactions, equilibrium property, exciton condensate, excitons, Fock exchange interaction, maximally-localized Wannier functions, Metals, molybdenum compounds, Monolayers, MoS2, n-type monolayer, Photonic band gap, p-type monolayer, Registers, tight-binding, TMD layer, transition metal dichalcogenide layer},
pages = {124--127}
}
@inproceedings{valsaraj_substitutional_2015,
title = {Substitutional doping of metal contact for monolayer transition metal dichalcogenides: {A} density functional theory based study},
shorttitle = {Substitutional doping of metal contact for monolayer transition metal dichalcogenides},
doi = {10.1109/SISPAD.2015.7292301},
abstract = {Significant roadblocks to the widespread use of monolayer transition metal dichalcogenides for CMOS-logic applications are the large contact resistance and absence of reliable doping techniques. Metal contacts that pin the Fermi level within the desired band are optimal for device applications. Here, we study substitutional doping of, and various metal contacts to, monolayer MoS2 using density functional theory.},
booktitle = {2015 {International} {Conference} on {Simulation} of {Semiconductor} {Processes} and {Devices} ({SISPAD})},
author = {Valsaraj, A. and Register, L.F. and Banerjee, S.K. and Chang, Jiwon},
month = sep,
year = {2015},
keywords = {ab initio, atomic layer deposition, atom-projected density of states, Bonding, contact resistance, Density functional theory, Doping, Doping profiles, Fermi level, Gold, metal contacts, molybdenum compounds, Monolayers, monolayer transition metal dichalcogenides, MoS2, Photonic band gap, reliable doping techniques, semiconductor materials, semiconductor-metal boundaries, Semiconductor process modeling, substitutional doping, transition metal dichalcogenides},
pages = {230--233}
}
@article{sanne_radio_2015,
title = {Radio {Frequency} {Transistors} and {Circuits} {Based} on {CVD} {MoS}2},
volume = {15},
issn = {1530-6984},
url = {http://dx.doi.org/10.1021/acs.nanolett.5b01080},
doi = {10.1021/acs.nanolett.5b01080},
abstract = {We report on the gigahertz radio frequency (RF) performance of chemical vapor deposited (CVD) monolayer MoS2 field-effect transistors (FETs). Initial DC characterizations of fabricated MoS2 FETs yielded current densities exceeding 200 ?A/?m and maximum transconductance of 38 ?S/?m. A contact resistance corrected low-field mobility of 55 cm2/(V s) was achieved. Radio frequency FETs were fabricated in the ground?signal?ground (GSG) layout, and standard de-embedding techniques were applied. Operating at the peak transconductance, we obtain short-circuit current-gain intrinsic cutoff frequency, fT, of 6.7 GHz and maximum intrinsic oscillation frequency, fmax, of 5.3 GHz for a device with a gate length of 250 nm. The MoS2 device afforded an extrinsic voltage gain Av of 6 dB at 100 MHz with voltage amplification until 3 GHz. With the as-measured frequency performance of CVD MoS2, we provide the first demonstration of a common-source (CS) amplifier with voltage gain of 14 dB and an active frequency mixer with conversion gain of ?15 dB. Our results of gigahertz frequency performance as well as analog circuit operation show that large area CVD MoS2 may be suitable for industrial-scale electronic applications.},
number = {8},
urldate = {2016-02-12},
journal = {Nano Lett.},
author = {Sanne, Atresh and Ghosh, Rudresh and Rai, Amritesh and Yogeesh, Maruthi Nagavalli and Shin, Seung Heon and Sharma, Ankit and Jarvis, Karalee and Mathew, Leo and Rao, Rajesh and Akinwande, Deji and Banerjee, Sanjay},
month = aug,
year = {2015},
pages = {5039--5045}
}
@article{sanne_top-gated_2015,
title = {Top-gated chemical vapor deposited {MoS}2 field-effect transistors on {Si}3N4 substrates},
volume = {106},
issn = {0003-6951, 1077-3118},
url = {http://scitation.aip.org/content/aip/journal/apl/106/6/10.1063/1.4907885},
doi = {10.1063/1.4907885},
abstract = {We report the electrical characteristics of chemical vapor deposited (CVD) monolayer molybdenum disulfide (MoS2) top-gated field-effect transistors (FETs) on silicon nitride (Si3N4) substrates. We show that Si3N4 substrates offer comparable electrical performance to thermally grown SiO2 substrates for MoS2 FETs, offering an attractive passivating substrate for transition-metal dichalcogenides (TMD) with a smooth surface morphology. Single-crystal MoS2 grains are grown via vapor transport process using solid precursors directly on low pressure CVD Si3N4, eliminating the need for transfer processes which degrade electrical performance. Monolayer top-gated MoS2 FETs with Al2O3 gate dielectric on Si3N4 achieve a room temperature mobility of 24 cm2/V s with Ion/Ioff current ratios exceeding 107. Using HfO2 as a gate dielectric, monolayer top-gated CVD MoS2 FETs on Si3N4 achieve current densities of 55 μA/μm and a transconductance of 6.12 μS/μm at Vtg of −5 V and Vds of 2 V. We observe an increase in mobility at lower temperatures, indicating phonon scattering may dominate over charged impurity scattering in our devices. Our results show that Si3N4 is an attractive alternative to thermally grown SiO2 substrate for TMD FETs.},
number = {6},
urldate = {2016-02-12},
journal = {Applied Physics Letters},
author = {Sanne, A. and Ghosh, R. and Rai, A. and Movva, H. C. P. and Sharma, A. and Rao, R. and Mathew, L. and Banerjee, S. K.},
month = feb,
year = {2015},
keywords = {Carrier mobility, Chemical vapor deposition, Dielectric thin films, Field effect transistors, Monolayers},
pages = {062101}
}
@article{roy_magnetization_2015,
title = {Magnetization switching of a metallic nanomagnet via current-induced surface spin-polarization of an underlying topological insulator},
volume = {117},
issn = {0021-8979, 1089-7550},
url = {http://scitation.aip.org/content/aip/journal/jap/117/16/10.1063/1.4918900},
doi = {10.1063/1.4918900},
abstract = {We consider a thermally stable, metallic nanoscale ferromagnet (FM) subject to spin-polarized current injection and exchange coupling from the spin-helically locked surface states of a topological insulator (TI) to evaluate possible non-volatile memory applications. We consider parallel transport in the TI and the metallic FM, and focus on the efficiency of magnetization switching as a function of transport between the TI and the FM. Transport is modeled as diffusive in the TI beneath the FM, consistent with the mobility in the TI at room temperature, and in the FM, which essentially serves as a constant potential region albeit spin-dependent except in the low conductivity, diffusive limit. Thus, it can be captured by drift-diffusion simulation, which allows for ready interpretation of the results. We calculate switching time and energy consumed per write operation using self-consistent transport, spin-transfer-torque (STT), and magnetization dynamics calculations. Calculated switching energies and times compare favorably to conventional spin-torque memory schemes for substantial interlayer conductivity. Nevertheless, we find that shunting of current from the TI to a metallic nanomagnet can substantially limit efficiency. Exacerbating the problem, STT from the TI effectively increases the TI resistivity. We show that for optimum performance, the sheet resistivity of the FM layer should be comparable to or larger than that of the TI surface layer. Thus, the effective conductivity of the FM layer becomes a critical design consideration for TI-based non-volatile memory.},
number = {16},
urldate = {2016-02-12},
journal = {Journal of Applied Physics},
author = {Roy, Urmimala and Dey, Rik and Pramanik, Tanmoy and Ghosh, Bahniman and Register, Leonard F. and Banerjee, Sanjay K.},
month = apr,
year = {2015},
keywords = {Charge injection, Electrical resistivity, Nanoelectronic devices, Surface states, Torque},
pages = {163906}
}
@inproceedings{roy_write_2015,
title = {Write error rate in spin-transfer-torque random access memory including micromagnetic effects},
doi = {10.1109/DRC.2015.7175598},
abstract = {Spin-transfer-torque (STT) random access memory (STTRAM) is considered to be one of the promising candidates for a non-volatile memory for improved scalability and access speed. Write error rate (WER) in an STTRAM is the probability that the free layer magnetization of the STTRAM bit does not flip when a write current is applied because of random thermal fluctuations. The WER needs to be below a certain acceptable limit for reliable write operation. Previously, WER have been studied using Fokker-Planck (FP) calculations for perpendicular bit [1] and using Landau-Lifshitz-Gilbert (LLG) simulations for the magnetization dynamics including a random thermal magnetic field and an STT term, for an in-plane bit with and without perpendicular magnetic anisotropy (PMA) [2]. These studies however assumed the free layer magnetization to be a macrospin, thereby neglecting the spatial variation in spin across the free layer (micromagnetic effects). Several important experimental observations related to WER in STTRAM have, however, been attributed to spatially varying spin-texture in the free layer magnet, for example, sub-volume excitations [3] and higher order spin wave modes related to branching of WER [4, 5].},
booktitle = {Device {Research} {Conference} ({DRC}), 2015 73rd {Annual}},
author = {Roy, U. and Kencke, D.L. and Pramanik, T. and Register, L.F. and Banerjee, S.K.},
month = jun,
year = {2015},
keywords = {error statistics, Fokker-Planck calculations, free layer magnetization, higher order spin wave modes, in-plane bit, Landau-Lifshitz-Gilbert simulations, LLG simulations, macrospin, magnetization dynamics, micromagnetic effects, micromagnetics, nonvolatile memory, perpendicular magnetic anisotropy, PMA, Poles and towers, random-access storage, random thermal fluctuations, random thermal magnetic field, spatially varying spin-texture, spatial variation, spin-transfer-torque random access memory, STT-RAM, sub-volume excitations, Switches, WER, write error rate},
pages = {147--148}
}
@article{roy_perpendicular_2015,
title = {Perpendicular {Magnetic} {Anisotropy} and {Spin} {Glass}-like {Behavior} in {Molecular} {Beam} {Epitaxy} {Grown} {Chromium} {Telluride} {Thin} {Films}},
volume = {9},
issn = {1936-0851},
url = {http://dx.doi.org/10.1021/nn5065716},
doi = {10.1021/nn5065716},
abstract = {Reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), vibrating sample magnetometry, and other physical property measurements are used to investigate the structure, morphology, magnetic, and magnetotransport properties of (001)-oriented Cr2Te3 thin films grown on Al2O3(0001) and Si(111)-(7?7) surfaces by molecular beam epitaxy. Streaky RHEED patterns indicate flat smooth film growth on both substrates. STM studies show the hexagonal arrangements of surface atoms. Determination of the lattice parameter from the atomically resolved STM image is consistent with the bulk crystal structures. Magnetic measurements show the film is ferromagnetic, having a Curie temperature of about 180 K, and a spin glass-like behavior was observed below 35 K. Magnetotransport measurements show the metallic nature of the film with a perpendicular magnetic anisotropy along the c-axis.},
number = {4},
urldate = {2016-02-12},
journal = {ACS Nano},
author = {Roy, Anupam and Guchhait, Samaresh and Dey, Rik and Pramanik, Tanmoy and Hsieh, Cheng-Chih and Rai, Amritesh and Banerjee, Sanjay K},
month = apr,
year = {2015},
pages = {3772--3779}
}
@article{rai_air_2015,
title = {Air {Stable} {Doping} and {Intrinsic} {Mobility} {Enhancement} in {Monolayer} {Molybdenum} {Disulfide} by {Amorphous} {Titanium} {Suboxide} {Encapsulation}},
volume = {15},
issn = {1530-6984},
url = {http://dx.doi.org/10.1021/acs.nanolett.5b00314},
doi = {10.1021/acs.nanolett.5b00314},
abstract = {To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D transition metal dichalcogenides (TMDs), considerable effort has been put into exploring various doping techniques and dielectric engineering using high-? oxides, respectively. The goal of this work is to demonstrate a high-? dielectric that serves as an effective n-type charge transfer dopant on monolayer (ML) molybdenum disulfide (MoS2). Utilizing amorphous titanium suboxide (ATO) as the ?high-? dopant?, we achieved a contact resistance of ?180 Ω·?m that is the lowest reported value for ML MoS2. An ON current as high as 240 ?A/?m and field effect mobility as high as 83 cm2/V-s were realized using this doping technique. Moreover, intrinsic mobility as high as 102 cm2/V-s at 300 K and 501 cm2/V-s at 77 K were achieved after ATO encapsulation that are among the highest mobility values reported on ML MoS2. We also analyzed the doping effect of ATO films on ML MoS2, a phenomenon that is absent when stoichiometric TiO2 is used, using ab initio density functional theory (DFT) calculations that shows excellent agreement with our experimental findings. On the basis of the interfacial-oxygen-vacancy mediated doping as seen in the case of high-? ATO?ML MoS2, we propose a mechanism for the mobility enhancement effect observed in TMD-based devices after encapsulation in a high-? dielectric environment.},
number = {7},
urldate = {2016-02-11},
journal = {Nano Lett.},
author = {Rai, Amritesh and Valsaraj, Amithraj and Movva, Hema C.P. and Roy, Anupam and Ghosh, Rudresh and Sonde, Sushant and Kang, Sangwoo and Chang, Jiwon and Trivedi, Tanuj and Dey, Rik and Guchhait, Samaresh and Larentis, Stefano and Register, Leonard F. and Tutuc, Emanuel and Banerjee, Sanjay K.},
month = jul,
year = {2015},
pages = {4329--4336}
}
@article{pramanik_proposal_2015,
title = {Proposal of a {Multistate} {Memory} {Using} {Voltage} {Controlled} {Magnetic} {Anisotropy} of a {Cross}-{Shaped} {Ferromagnet}},
volume = {14},
issn = {1536-125X},
doi = {10.1109/TNANO.2015.2457833},
abstract = {Voltage controlled magnetic anisotropy (VCMA)-induced precessional magnetization dynamics of a cross-shaped ferromagnet (FM) is studied by micromagnetic simulation. A cross-shaped FM, which has four minima in its energy landscape, can be used to store two bits. We show that, by selecting appropriate dimensions and taking into account interfacial perpendicular magnetic anisotropy, the cross-shaped FM can be switched from one state to the other states using VCMA, while the in-plane component of magnetization provides multistate functionality. VCMA-induced switching provides a low-power alternative to spin-transfer-torque switching of a similar cross-shaped FM studied previously. We estimate the thermal stability using the string method to capture the complex micromagnetic nature of the switching along the minimum energy path. The results could be useful toward development of a low-power multistate nonvolatile memory.},
number = {5},
journal = {IEEE Transactions on Nanotechnology},
author = {Pramanik, T. and Roy, U. and Register, L.F. and Banerjee, S.K.},
month = sep,
year = {2015},
keywords = {Anisotropic magnetoresistance, cross-shaped ferromagnet, energy landscape, ferromagnetic materials, Frequency modulation, in-plane magnetization component, interfacial perpendicular magnetic anisotropy, low-power multistate nonvolatile memory, Magnetic anisotropy, magnetic switching, Magnetic tunneling, Magnetization, micromagnetics, micromagnetic simulation, minimum energy path, MRAM devices, multistate functionality, Multi-state memory, Multistate memory, perpendicular magnetic anisotropy, Shape anisotropy, string method, Switches, Thermal stability, Voltage Controlled Magnetic Anisotropy, voltage controlled magnetic anisotropy-induced precessional magnetization dynamics, voltage controlled magnetic anisotropy-induced switching},
pages = {883--888}
}
@article{park_situ_2015,
title = {In {Situ} {Observation} of {Initial} {Stage} in {Dielectric} {Growth} and {Deposition} of {Ultrahigh} {Nucleation} {Density} {Dielectric} on {Two}-{Dimensional} {Surfaces}},
volume = {15},
issn = {1530-6984},
url = {http://dx.doi.org/10.1021/acs.nanolett.5b02429},
doi = {10.1021/acs.nanolett.5b02429},
abstract = {Several proposed beyond-CMOS devices based on two-dimensional (2D) heterostructures require the deposition of thin dielectrics between 2D layers. However, the direct deposition of dielectrics on 2D materials is challenging due to their inert surface chemistry. To deposit high-quality, thin dielectrics on 2D materials, a flat lying titanyl phthalocyanine (TiOPc) monolayer, deposited via the molecular beam epitaxy, was employed to create a seed layer for atomic layer deposition (ALD) on 2D materials, and the initial stage of growth was probed using in situ STM. ALD pulses of trimethyl aluminum (TMA) and H2O resulted in the uniform deposition of AlOx on the TiOPc/HOPG. The uniformity of the dielectric is consistent with DFT calculations showing multiple reaction sites are available on the TiOPc molecule for reaction with TMA. Capacitors prepared with 50 cycles of AlOx on TiOPc/graphene display a capacitance greater than 1000 nF/cm2, and dual-gated devices have current densities of 10?7A/cm2 with 40 cycles.},
number = {10},
urldate = {2016-02-12},
journal = {Nano Lett.},
author = {Park, Jun Hong and Movva, Hema C. P. and Chagarov, Evgeniy and Sardashti, Kasra and Chou, Harry and Kwak, Iljo and Hu, Kai-Ting and Fullerton-Shirey, Susan K. and Choudhury, Pabitra and Banerjee, Sanjay K. and Kummel, Andrew C.},
month = oct,
year = {2015},
pages = {6626--6633}
}
@article{movva_high-mobility_2015,
title = {High-{Mobility} {Holes} in {Dual}-{Gated} {WSe}2 {Field}-{Effect} {Transistors}},
volume = {9},
issn = {1936-0851},
url = {http://dx.doi.org/10.1021/acsnano.5b04611},
doi = {10.1021/acsnano.5b04611},
abstract = {We demonstrate dual-gated p-type field-effect transistors (FETs) based on few-layer tungsten diselenide (WSe2) using high work-function platinum source/drain contacts and a hexagonal boron nitride top-gate dielectric. A device topology with contacts underneath the WSe2 results in p-FETs with ION/IOFF ratios exceeding 107 and contacts that remain ohmic down to cryogenic temperatures. The output characteristics show current saturation and gate tunable negative differential resistance. The devices show intrinsic hole mobilities around 140 cm2/(V s) at room temperature and approaching 4000 cm2/(V s) at 2 K. Temperature-dependent transport measurements show a metal?insulator transition, with an insulating phase at low densities and a metallic phase at high densities. The mobility shows a strong temperature dependence consistent with phonon scattering, and saturates at low temperatures, possibly limited by Coulomb scattering or defects.},
number = {10},
urldate = {2016-02-12},
journal = {ACS Nano},
author = {Movva, Hema C. P. and Rai, Amritesh and Kang, Sangwoo and Kim, Kyounghwan and Fallahazad, Babak and Taniguchi, Takashi and Watanabe, Kenji and Tutuc, Emanuel and Banerjee, Sanjay K.},
month = oct,
year = {2015},
pages = {10402--10410}
}
@article{mou_quantum_2015,
title = {Quantum transport simulation of exciton condensate transport physics in a double-layer graphene system},
volume = {92},
url = {http://link.aps.org/doi/10.1103/PhysRevB.92.235413},
doi = {10.1103/PhysRevB.92.235413},
abstract = {Spatially indirect electron-hole exciton condensates stabilized by interlayer Fock exchange interactions have been predicted in systems containing a pair of two-dimensional semiconductor or semimetal layers separated by a thin tunnel dielectric. The layer degree of freedom in these systems can be described as a pseudospin. Condensation is then analogous to ferromagnetism, and the interplay between collective and quasiparticle contributions to transport is analogous to phenomena that are heavily studied in spintronics. These phenomena are the basis for pseudospintronic device proposals based on possible low-voltage switching between high (nearly shorted) and low interlayer conductance states and on near-perfect Coulomb drag-counterflow current along the layers. In this work, a quantum transport simulator incorporating a nonlocal Fock exchange interaction is presented, and used to model the essential transport physics in, for specificity, a graphene-dielectric-graphene system. Finite-size effects, Coulomb drag-counterflow current, critical interlayer currents beyond which interlayer dc conductance collapses at subthermal voltages, nonlocal coupling between interlayer critical currents in multiple lead devices, and an Andreev-like reflection process are illustrated.},
number = {23},
urldate = {2016-02-16},
journal = {Phys. Rev. B},
author = {Mou, Xuehao and Register, Leonard F. and MacDonald, Allan H. and Banerjee, Sanjay K.},
month = dec,
year = {2015},
pages = {235413}
}
@article{koh_damage_2015,
title = {Damage free {Ar} ion plasma surface treatment on {In}0.53Ga0.47As-on-silicon metal-oxide-semiconductor device},
volume = {107},
issn = {0003-6951, 1077-3118},
url = {http://scitation.aip.org/content/aip/journal/apl/107/18/10.1063/1.4935248},
doi = {10.1063/1.4935248},
abstract = {In this paper, we investigated the effect of in-situ Ar ion plasma surface pre-treatment in order to improve the interface properties of In0.53Ga0.47As for high-κ top-gate oxide deposition. X-ray photoelectron spectroscopy (XPS) and metal-oxide-semiconductor capacitors (MOSCAPs) demonstrate that Ar ion treatment removes the native oxide on In0.53Ga0.47As. The XPS spectra of Ar treated In0.53Ga0.47As show a decrease in the AsOx and GaOx signal intensities, and the MOSCAPs show higher accumulation capacitance (Cacc), along with reduced frequency dispersion. In addition, Ar treatment is found to suppress the interface trap density (Dit), which thereby led to a reduction in the threshold voltage (Vth) degradation during constant voltage stress and relaxation. These results outline the potential of surface treatment for III-V channel metal-oxide-semiconductor devices and application to non-planar device process.},
number = {18},
urldate = {2016-02-16},
journal = {Applied Physics Letters},
author = {Koh, Donghyi and Shin, Seung Heon and Ahn, Jaehyun and Sonde, Sushant and Kwon, Hyuk-Min and Orzali, Tommaso and Kim, Dae-Hyun and Kim, Tae-Woo and Banerjee, Sanjay K.},
month = nov,
year = {2015},
keywords = {III-V semiconductors, Metal insulator semiconductor structures, Oxide surfaces, Surface treatments, X-ray photoelectron spectroscopy},
pages = {183509}
}
@article{kang_bilayer_2015,
title = {Bilayer {Graphene}-{Hexagonal} {Boron} {Nitride} {Heterostructure} {Negative} {Differential} {Resistance} {Interlayer} {Tunnel} {FET}},
volume = {36},
issn = {0741-3106},
doi = {10.1109/LED.2015.2398737},
abstract = {We present the room temperature operation of a vertical tunneling field-effect transistor using a stacked double bilayer graphene (BLG) and hexagonal boron nitride heterostructure. The device shows two tunneling resonances with negative differential resistance (NDR). An analysis of the electrostatic potential drop across the heterostructure indicates the resonances are associated with the relative alignment of the lower or upper bands of the two BLG. Using the NDR characteristic of the device, one-transistor latch or SRAM operation is demonstrated. The device characteristics are largely insensitive to temperature from 1.5 to 300 K.},
number = {4},
journal = {IEEE Electron Device Letters},
author = {Kang, Sangwoo and Fallahazad, B. and Lee, Kayoung and Movva, H. and Kim, Kyounghwan and Corbet, C.M. and Taniguchi, T. and Watanabe, K. and Colombo, L. and Register, L.F. and Tutuc, E. and Banerjee, S.K.},
month = apr,
year = {2015},
keywords = {bilayer graphene, BLG, BN, boron compounds, C, Electric potential, electrostatic potential drop analysis, Electrostatics, flip-flops, graphene, hexagonal boron nitride, hexagonal heterostructure, high electron mobility transistors, latch, Latches, lower-upper bands, NDR characteristic, Negative differential resistance, negative differential resistance interlayer tunnel FET, one-transistor latch, Random access memory, relative alignment, resonant tunneling, Resonant tunneling devices, resonant tunnelling transistors, room temperature operation, SRAM chips, SRAM operation, stacked double bilayer graphene, stacking, static random access memory, temperature 1.5 K to 300 K, tunneling field effect transistor, tunneling resonances, vertical tunneling field-effect transistor},
pages = {405--407}
}
@article{hsu_comment_2015,
title = {Comment on “{Assessment} of field-induced quantum confinement in heterogate germanium electron–hole bilayer tunnel field-effect transistor” [{Appl}. {Phys}. {Lett}. 105, 082108 (2014)]},
volume = {106},
issn = {0003-6951, 1077-3118},
url = {http://scitation.aip.org/content/aip/journal/apl/106/2/10.1063/1.4905865},
doi = {10.1063/1.4905865},
abstract = {Scitation is the online home of leading journals and conference proceedings from AIP Publishing and AIP Member Societies},
number = {2},
urldate = {2016-02-12},
journal = {Applied Physics Letters},
author = {Hsu, William and Mantey, Jason and Register, Leonard F. and Banerjee, Sanjay K.},
month = jan,
year = {2015},
keywords = {Carrier density, Elemental semiconductors, Germanium, Tunneling, Work functions},
pages = {026102}
}
@article{hsu_electrostatic_2015,
title = {On the {Electrostatic} {Control} of {Gate}-{Normal}-{Tunneling} {Field}-{Effect} {Transistors}},
volume = {62},
issn = {0018-9383},
doi = {10.1109/TED.2015.2434615},
abstract = {A gate-normal-tunneling field-effect transistor (gate-normal TFET) with abrupt switching and increased tunneling current is a promising candidate for low-voltage operation in advanced technology nodes. However, it is still challenging to experimentally achieve steep subthreshold swings (SSs) of theoretical predictions. The parasitic nonnormal tunneling initiated prior to the desired normal tunneling due to poor electrostatic control is considered to be one of the explanations for the experimentally inferior SS. This paper investigates the electrostatic control of gate-normal TFETs via numerical simulations in which a semiclassical approximation is used for the tunneling barrier imposed by quantum confinement. The electrostatic potential throughout the device is found to be strongly influenced by quantum effects. As a result, we predicted a higher parasitic tunneling current using our semiclassical simulations (quantum corrected 3-D) compared with classical (nonquantum corrected 3-D) results for gate-normal TFETs with a homojunction. This finding was supported by a qualitative fully quantum mechanical (2-D sub-band) study. A heterojunction gate-normal TFET design utilizing an underlying modulation-doping layer is proposed to minimize parasitic tunneling with small variation of quantum confinement and low doping level in the channel.},
number = {7},
journal = {IEEE Transactions on Electron Devices},
author = {Hsu, W. and Mantey, J. and Register, L.F. and Banerjee, S.K.},
month = jul,
year = {2015},
keywords = {2D subband study, abrupt switching, Doping, Electric potential, electrostatic control, Electrostatics, Field effect transistors, Field-induced quantum confinement, gate normal tunneling, gate normal tunneling field effect transistors, heterojunction gate normal TFET, High definition video, Logic gates, low voltage operation, modulation doping, parasitic tunneling, quantum confinement, quantum mechanical study, quantum theory, Silicon, TFET simulation, TFET simulation., tunnel field-effect transistor (TFET), Tunneling, tunneling barrier, tunneling current, tunnel transistors},
pages = {2292--2299}
}
@article{hsieh_characteristics_2015,
title = {Characteristics and mechanism study of cerium oxide based random access memories},
volume = {106},
issn = {0003-6951, 1077-3118},
url = {http://scitation.aip.org/content/aip/journal/apl/106/17/10.1063/1.4919442},
doi = {10.1063/1.4919442},
abstract = {In this work, low operating voltage and high resistance ratio of different resistance states of binary transition metal oxide based resistive random access memories (RRAMs) are demonstrated. Binary transition metal oxides with high dielectric constant have been explored for RRAM application for years. However, CeOx is considered as a relatively new material to other dielectrics. Since research on CeOx based RRAM is still at preliminary stage, fundamental characteristics of RRAM such as scalability and mechanism studies need to be done before moving further. Here, we show very high operation window and low switching voltage of CeOx RRAMs and also compare electrical performance of Al/CeOx/Au system between different thin film deposition methods and discuss characteristics and resistive switching mechanism.},
number = {17},
urldate = {2016-02-12},
journal = {Applied Physics Letters},
author = {Hsieh, Cheng-Chih and Roy, Anupam and Rai, Amritesh and Chang, Yao-Feng and Banerjee, Sanjay K.},
month = apr,
year = {2015},
keywords = {Cerium, Magnetization reversals, Molecular beam epitaxy, Physical vapor deposition, X-ray photoelectron spectroscopy},
pages = {173108}
}
@inproceedings{hsieh_cerium_2015,
title = {Cerium oxide based bipolar resistive switching memory with low operation voltage and high resistance ratio},
doi = {10.1109/DRC.2015.7175575},
abstract = {Resistive random access memory (RRAM) is attractive as a promising candidate for next generation nonvolatile memory due to its potential scalability beyond 10 nm feature size using a crossbar structure, fast switching speed, low operating power, and good reliability. Cerium oxide has high dielectric constant and various valance states, making cerium oxide a potential material for RRAM application. Nevertheless, fundamental characterization of CeOx based RRAMs i.e., the scalability, reliability and mechanism, has been only partially reported. In this paper the fundamental characteristics of cerium oxide RRAMs are studied. In this paper metal-insulator-metal (MIM) structure is studied for memory device characterization.},
booktitle = {Device {Research} {Conference} ({DRC}), 2015 73rd {Annual}},
author = {Hsieh, C.-C. and Roy, A. and Chang, Yao-Feng and Rai, A. and Banerjee, S.},
month = jun,
year = {2015},
keywords = {bipolar resistive switching memory, CeOx, cerium compounds, cerium oxide RRAM, crossbar structure, dielectric constant, memory device characterization, metal-insulator-metal structure, MIM devices, MIM structure, MIM structures, Molecular beam epitaxial growth, next generation nonvolatile memory, resistive RAM, resistive random access memory, Switches, valance states},
pages = {101--102}
}
@article{fallahazad_gate-tunable_2015,
title = {Gate-{Tunable} {Resonant} {Tunneling} in {Double} {Bilayer} {Graphene} {Heterostructures}},
volume = {15},
issn = {1530-6984},
url = {http://dx.doi.org/10.1021/nl503756y},
doi = {10.1021/nl503756y},
abstract = {We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current?voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials indicates that the resonance occurs when the energy bands of the two bilayer graphene are aligned. We discuss the tunneling resistance dependence on the interlayer hBN thickness, as well as the resonance width dependence on mobility and rotational alignment.},
number = {1},
urldate = {2016-02-11},
journal = {Nano Lett.},
author = {Fallahazad, Babak and Lee, Kayoung and Kang, Sangwoo and Xue, Jiamin and Larentis, Stefano and Corbet, Christopher and Kim, Kyounghwan and Movva, Hema C. P. and Taniguchi, Takashi and Watanabe, Kenji and Register, Leonard F. and Banerjee, Sanjay K. and Tutuc, Emanuel},
month = jan,
year = {2015},
pages = {428--433}
}
@inproceedings{crum_impact_2015,
title = {Impact of gate oxide complex band structure on n-channel {III} \#x2013;{V} {FinFETs}},
doi = {10.1109/SISPAD.2015.7292306},
abstract = {FinFET geometries have been developed for the sub-22 nm regime to extend Si-CMOS scaling via improved electrostatics compared to planar technology. Moreover, engineers have incorporated high-k oxide gate stacks. Beyond leakage current, less discussed is the impact of the gate oxide's complex band structure on the device performance. However, it defines the boundary condition for the channel wavefunction at the interface, which, in turn, affects the quantum confinement energy for channel electrons. Here we show that the ON-state performance of n-channel FinFETs may be sensitive to the oxide's complex band structure, especially with light-mass III-V channel materials, such as In0.53Ga0.47As. We study this effect using an ensemble semi-classical Monte Carlo device simulator with advanced quantum corrections for degeneracy and confinement effects. Our simulations suggest that using a surface oxide with a heavy effective mass may lower the channel carrier confinement energies, mitigating unwanted quantum side-effects that hinder device performance. Ultimately, future high-k stacks may benefit from oxide gate stack heterostructures balancing effective mass and dielectric permittivity considerations.},
booktitle = {2015 {International} {Conference} on {Simulation} of {Semiconductor} {Processes} and {Devices} ({SISPAD})},
author = {Crum, D.M. and Valsaraj, A. and Register, L.F. and Banerjee, S.K. and Sahu, B. and Krivakopic, Z. and Banna, S. and Nayak, D.},
month = sep,
year = {2015},
keywords = {Aluminum oxide, channel electrons, channel wavefunction, CMOS integrated circuits, CMOS scaling, dielectric constant, dielectric permittivity, Effective mass, FinFETs, gate oxide complex band structure, hafnium compounds, high-k oxide gate stacks, III-V semiconductors, leakage current, leakage currents, Logic gates, Monte Carlo methods, MOSFET, n-channel III-V FinFET, oxide gate stack heterostructures, Performance evaluation, permittivity, quantum confinement energy, quantum side-effects, semi-classical Monte Carlo device simulator, surface oxide},
pages = {250--253}
}
@article{corbet_field_2015,
title = {Field {Effect} {Transistors} with {Current} {Saturation} and {Voltage} {Gain} in {Ultrathin} {ReS}2},
volume = {9},
issn = {1936-0851},
url = {http://dx.doi.org/10.1021/nn505354a},
doi = {10.1021/nn505354a},
abstract = {We report the fabrication and device characteristics of exfoliated, few-layer, dual-gated ReS2 field effect transistors (FETs). The ReS2 FETs display n-type behavior with a room temperature Ion/Ioff of 105. Many devices were studied with a maximum intrinsic mobility of 12 cm2·V?1·s?1 at room temperature and 26 cm2·V?1·s?1 at 77 K. The Cr/Au-ReS2 contact resistance determined using the transfer length method is gate-bias dependent and ranges from 175 kΩ·?m to 5 kΩ·?m, and shows an exponential dependence on back-gate voltage indicating Schottky barriers at the source and drain contacts. Dual-gated ReS2 FETs demonstrate current saturation, voltage gain, and a subthreshold swing of 148 mV/decade.},
number = {1},
urldate = {2016-02-12},
journal = {ACS Nano},
author = {Corbet, Chris M. and McClellan, Connor and Rai, Amritesh and Sonde, Sushant Sudam and Tutuc, Emanuel and Banerjee, Sanjay K.},
month = jan,
year = {2015},
pages = {363--370}
}
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