Electronics with van der Waals Semiconductors

Research on two-dimensional (2D) semiconductors like graphene and transition metal dichalcogenides (TMDs) has been a major thrust area in the BanerjeeLab over the past few years. With the ultimate goal of building functional devices based on 2D heterostructures, our research currently focuses on:

• Contact engineering and transport studies in TMDs
• Novel doping techniques of TMDs
• Applications of TMD-FETs for post-Si CMOS and RF device applications
• Interlayer tunnel FETs based on graphene and TMD heterostructures
• Large area growth of graphene, TMDs and hBN using CVD and MBE

Recent Publications:

• Anupam Roy, Rudresh Ghosh, Amritesh Rai, Atresh Sanne, Kyounghwan Kim, Hema C. P. Movva, Rik Dey, Tanmoy Pramanik, Sayema Chowdhury, Emanuel Tutuc, and Sanjay K. Banerjee. Intra-domain periodic defects in monolayer MoS₂. Applied Physics Letters, 110(20):201905, May 2017. [DOI | http ]
• Stefano Larentis, Babak Fallahazad, Hema C. P. Movva, Kyounghwan Kim, Amritesh Rai, Takashi Taniguchi, Kenji Watanabe, Sanjay K. Banerjee, and Emanuel Tutuc. Reconfigurable Complementary Monolayer MoTe₂ Field-Effect Transistors for Integrated Circuits. ACS Nano, 11(5):4832--4839, May 2017. [DOI | http ]
• Sushant Sonde, Andrei Dolocan, Ning Lu, Chris Corbet, Moon J Kim, Emanuel Tutuc, Sanjay K Banerjee, and Luigi Colombo. Ultrathin, wafer-scale hexagonal boron nitride on dielectric surfaces by diffusion and segregation mechanism. 2D Materials, 4(2):025052, March 2017. [DOI | http ]
• Amithraj Valsaraj, Leonard F. Register, Emanuel Tutuc, and Sanjay K. Banerjee. DFT simulations of inter-graphene-layer coupling with rotationally misaligned hBN tunnel barriers in graphene/hBN/graphene tunnel FETs. Journal of Applied Physics, 120(13):134310, October 2016. [DOI | http ]
• Sangwoo Kang, Nitin Prasad, Hema C. P. Movva, Amritesh Rai, Kyounghwan Kim, Xuehao Mou, Takashi Taniguchi, Kenji Watanabe, Leonard F. Register, Emanuel Tutuc, and Sanjay K. Banerjee. Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene–hBN–Graphene Interlayer Tunnel Field Effect Transistors. Nano Letters, July 2016. [DOI | http ]
• Sk F. Chowdhury, Maruthi N. Yogeesh, Sanjay K. Banerjee, and Deji Akinwande. Black Phosphorous Thin-Film Transistor and RF Circuit Applications. IEEE Electron Device Letters, 37(4):449-451, April 2016. [DOI | http ]
• Sangwoo Kang, Hema C. P. Movva, Atresh Sanne, Amritesh Rai, and Sanjay K. Banerjee. Influence of electron-beam lithography exposure current level on the transport characteristics of graphene field effect transistors. Journal of Applied Physics, 119(12):124502, March 2016. [DOI | http ]
• Anupam Roy, Hema C. P. Movva, Biswarup Satpati, Kyounghwan Kim, Rik Dey, Amritesh Rai, Tanmoy Pramanik, Samaresh Guchhait, Emanuel Tutuc, and Sanjay K. Banerjee. Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy. ACS Appl. Mater. Interfaces, March 2016. [DOI | http ]
• Babak Fallahazad, Hema C. P. Movva, Kyounghwan Kim, Stefano Larentis, Takashi Taniguchi, Kenji Watanabe, Sanjay K. Banerjee, and Emanuel Tutuc. Shubnikov-de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer WSe2: Landau Level Degeneracy, Effective Mass, and Negative Compressibility. Phys. Rev. Lett., 116(8):086601, February 2016. [DOI | http ]
• Rudresh Ghosh, Joon-Seok Kim, Anupam Roy, Harry Chou, Mary Vu, Sanjay K. Banerjee, and Deji Akinwande. Large area chemical vapor deposition growth of monolayer MoSe2 and its controlled sulfurization to MoS2. Journal of Materials Research, FirstView:1-6, 2016. [DOI | http ]
• Hema C. P. Movva, Amritesh Rai, Sangwoo Kang, Kyounghwan Kim, Babak Fallahazad, Takashi Taniguchi, Kenji Watanabe, Emanuel Tutuc, and Sanjay K. Banerjee. High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors. ACS Nano, 9(10):10402-10410, October 2015. [ DOI | http ]
• Amritesh Rai, Amithraj Valsaraj, Hema C.P. Movva, Anupam Roy, Rudresh Ghosh, Sushant Sonde, Sangwoo Kang, Jiwon Chang, Tanuj Trivedi, Rik Dey, Samaresh Guchhait, Stefano Larentis, Leonard F. Register, Emanuel Tutuc, and Sanjay K. Banerjee. Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation. Nano Lett., 15(7):4329-4336, July 2015. [ DOI | http ]
• Sangwoo Kang, B. Fallahazad, Kayoung Lee, H. Movva, Kyounghwan Kim, C.M. Corbet, T. Taniguchi, K. Watanabe, L. Colombo, L.F. Register, E. Tutuc, and S.K. Banerjee. Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET. IEEE Electron Device Letters, 36(4):405-407, April 2015. [ DOI ]
• Chris M. Corbet, Connor McClellan, Amritesh Rai, Sushant Sudam Sonde, Emanuel Tutuc, and Sanjay K. Banerjee. Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS2. ACS Nano, 9(1):363-370, January 2015. [ DOI | http ]
• Gianluca Fiori, Francesco Bonaccorso, Giuseppe Iannaccone, Tomás Palacios, Daniel Neumaier, Alan Seabaugh, Sanjay K. Banerjee, and Luigi Colombo. Electronics based on two-dimensional materials. Nature Nanotechnology, 9(10):768-779, October 2014. [ DOI | .html ]
• Jiwon Chang, Leonard F. Register, and Sanjay K. Banerjee. Atomistic full-band simulations of monolayer MoS2 transistors. Applied Physics Letters, 103(22):223509, November 2013. [ DOI | http ]
• Hema C. P. Movva, Michael E. Ramón, Chris M. Corbet, Sushant Sonde, Sk Fahad Chowdhury, Gary Carpenter, Emanuel Tutuc, and Sanjay K. Banerjee. Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions. Applied Physics Letters, 101(18):183113, October 2012. [ DOI | http ]
• M.E. Ramón, K.N. Parrish, S.F. Chowdhury, Carl W. Magnuson, H.C.P. Movva, R.S. Ruoff, Sanjay K. Banerjee, and D. Akinwande. Three-Gigahertz Graphene Frequency Doubler on Quartz Operating Beyond the Transit Frequency. IEEE Transactions on Nanotechnology, 11(5):877-883, September 2012. [ DOI ]
• Michael E. Ramón, Aparna Gupta, Chris Corbet, Domingo A. Ferrer, Hema C. P. Movva, Gary Carpenter, Luigi Colombo, George Bourianoff, Mark Doczy, Deji Akinwande, Emanuel Tutuc, and Sanjay K. Banerjee. CMOS-Compatible Synthesis of Large-Area, High-Mobility Graphene by Chemical Vapor Deposition of Acetylene on Cobalt Thin Films. ACS Nano, 5(9):7198-7204, September 2011. [ DOI | http ]
• Sanjay K. Banerjee, L.F. Register, E. Tutuc, D. Basu, Seyoung Kim, D. Reddy, and A.H. MacDonald. Graphene for CMOS and Beyond CMOS Applications. Proceedings of the IEEE, 98(12):2032-2046, December 2010. [ DOI ]
• Xuesong Li, Weiwei Cai, Jinho An, Seyoung Kim, Junghyo Nah, Dongxing Yang, Richard Piner, Aruna Velamakanni, Inhwa Jung, Emanuel Tutuc, Sanjay K. Banerjee, Luigi Colombo, and Rodney S. Ruoff. Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils. Science, 324(5932):1312-1314, June 2009. [ DOI | http ]
• Seyoung Kim, Junghyo Nah, Insun Jo, Davood Shahrjerdi, Luigi Colombo, Zhen Yao, Emanuel Tutuc, and Sanjay K. Banerjee. Realization of a high mobility dual-gated graphene field-effect transistor with Al2o3 dielectric. Applied Physics Letters, 94(6):062107, February 2009. [ DOI | http ]
• Sanjay K. Banerjee, L.F. Register, E. Tutuc, D. Reddy, and A.H. MacDonald. Bilayer PseudoSpin Field-Effect Transistor (BiSFET): A Proposed New Logic Device. IEEE Electron Device Letters, 30(2):158-160, February 2009. [ DOI ]