@inproceedings{prasad_multi-barrier_2016,
title = {Multi-barrier inter-layer tunnel field-effect transistor},
doi = {10.1109/IEDM.2016.7838513},
url={https://doi.org/10.1109/IEDM.2016.7838513},
abstract = {The resonant tunneling characteristics of the inter-layer tunnel field-effect transistor (ITFET) within 2D van der Waals' materials can be made sharper by the use of multiple (m) intermediate well and tunnel barrier layers within a “mlTFET” variation. Ballistic quantum transport simulations are used to obtain the resonance characteristics in an MoS2 based-system, for specificity. Circuit simulations illustrate how the sharper resonance can lead to lower operating voltages and, thus, power, thereby improving the circuit performance.},
booktitle = {2016 {IEEE} {International} {Electron} {Devices} {Meeting} ({IEDM})},
author = {Prasad, N. and Mou, X. and Register, L. F. and Banerjee, S. K.},
month = dec,
year = {2016},
keywords = {2D van der Waals materials, Ballistic quantum transport simulations, ballistic transport, circuit performance improvement, circuit simulation, circuit simulations, Field effect transistors, Integrated circuit modeling, Logic gates, mITFET variation, Molybdenum, molybdenum compounds, MoS2, MoS2 based-system, multibarrier inter-layer tunnel field-effect transistor, multiple intermediate well, resonant tunneling characteristics, resonant tunnelling transistors, semiconductor device models, Sulfur, tunnel barrier layers, Tunneling, Two dimensional displays, Uncertainty},
pages = {30.4.1--30.4.4}
}
@article{hsieh_sub-1-volt_2016,
title = {A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems},
volume = {109},
issn = {0003-6951},
url = {http://aip.scitation.org/doi/abs/10.1063/1.4971188},
doi = {10.1063/1.4971188},
number = {22},
urldate = {2017-05-30},
journal = {Applied Physics Letters},
author = {Hsieh, Cheng-Chih and Roy, Anupam and Chang, Yao-Feng and Shahrjerdi, Davood and Banerjee, Sanjay K.},
month = nov,
year = {2016},
pages = {223501}
}
@article{ahn_nanoscale_2016,
title = {Nanoscale doping of compound semiconductors by solid phase dopant diffusion},
volume = {108},
issn = {0003-6951, 1077-3118},
url = {http://scitation.aip.org/content/aip/journal/apl/108/12/10.1063/1.4944888},
doi = {10.1063/1.4944888},
abstract = {Achieving damage-free, uniform, abrupt, ultra-shallow junctions while simultaneously controlling the doping concentration on the nanoscale is an ongoing challenge to the scaling down of electronic device dimensions. Here, we demonstrate a simple method of effectively doping ΙΙΙ-V compound semiconductors, specifically InGaAs, by a solid phase doping source. This method is based on the in-diffusion of oxygen and/or silicon from a deposited non-stoichiometric silicon dioxide (SiOx) film on InGaAs, which then acts as donors upon activation by annealing. The dopant profile and concentration can be controlled by the depositedfilm thickness and thermal annealing parameters, giving active carrier concentration of 1.4 × 1018 cm−3. Our results also indicate that conventional silicon based processes must be carefully reviewed for compound semiconductor device fabrication to prevent unintended doping.},
number = {12},
urldate = {2016-03-28},
journal = {Applied Physics Letters},
author = {Ahn, Jaehyun and Chou, Harry and Koh, Donghyi and Kim, Taegon and Roy, Anupam and Song, Jonghan and Banerjee, Sanjay K.},
month = mar,
year = {2016},
keywords = {III-V semiconductors, Ion beam assisted deposition, Ion implantation, Silicon, thin films},
pages = {122107}
}
@article{bhatti_first-principles_2016,
title = {First-principles simulation of oxygen vacancy migration in HfOx, CeOx, and at their interfaces for applications in resistive random-access memories},
issn = {1569-8025, 1572-8137},
url = {http://link.springer.com/article/10.1007/s10825-016-0847-9},
doi = {10.1007/s10825-016-0847-9},
abstract = {Transition metal-oxide resistive random-access memories seem to be a viable candidate as the next-generation storage technology because transition metals have multiple oxidation states and are good ionic conductors. A wide range of transition metal oxides have recently been studied; however, fundamental understanding of the switching mechanism is still lacking. Migration energies and diffusivity of oxygen vacancies in amorphous and crystalline HfO2HfO2{\textbackslash}hbox \{HfO\}\_\{2\} and CeO2CeO2{\textbackslash}hbox \{CeO\}\_\{2\} and at their interface are investigated by employing density functional theory. We found that oxygen dynamics is better in CeO2CeO2{\textbackslash}hbox \{CeO\}\_\{2\} compared to HfO2HfO2{\textbackslash}hbox \{HfO\}\_\{2\}, including smaller activation energy barriers and larger diffusion pre-factors, which can have implications in the material-selection process to determine which combination of materials offer the most efficient switching. Furthermore, we found that motion of vacancies is different at the interface of these two oxides as compared to that within each constituents, which provided insight into the role of the interface in vacancy motion and ultimately using interface engineering as a way to tune material properties.},
language = {en},
urldate = {2016-07-27},
journal = {Journal of Computational Electronics},
author = {Bhatti, Aqyan A. and Hsieh, Cheng-Chih and Roy, Anupam and Register, Leonard F. and Banerjee, Sanjay K.},
month = jun,
year = {2016},
pages = {1--8}
}
@article{chang_large-area_2016,
title = {Large-{Area} {Monolayer} {MoS}2 for {Flexible} {Low}-{Power} {RF} {Nanoelectronics} in the {GHz} {Regime}},
volume = {28},
issn = {1521-4095},
url = {http://onlinelibrary.wiley.com/doi/10.1002/adma.201504309/abstract},
doi = {10.1002/adma.201504309},
language = {en},
number = {9},
urldate = {2016-03-21},
journal = {Advanced Materials},
author = {Chang, Hsiao-Yu and Yogeesh, Maruthi Nagavalli and Ghosh, Rudresh and Rai, Amritesh and Sanne, Atresh and Yang, Shixuan and Lu, Nanshu and Banerjee, Sanjay Kumar and Akinwande, Deji},
month = mar,
year = {2016},
keywords = {2D materials, CVD-growth, flexible electronics, molybdenum disulfide, Radio frequency},
pages = {1818--1823}
}
@article{chowdhury_black_2016,
title = {Black {Phosphorous} {Thin}-{Film} {Transistor} and {RF} {Circuit} {Applications}},
volume = {37},
issn = {0741-3106},
url = {http://ieeexplore.ieee.org/articleDetails.jsp?arnumber=7421966},
doi = {10.1109/LED.2016.2536102},
language = {English},
number = {4},
urldate = {2016-08-02},
journal = {IEEE Electron Device Letters},
author = {Chowdhury, Sk F. and Yogeesh, Maruthi N. and Banerjee, Sanjay K. and Akinwande, Deji},
month = apr,
year = {2016},
pages = {449--451}
}
@article{dey_localization_2016,
title = {Localization and interaction effects of epitaxial {Bi}2Se3 bulk states in two-dimensional limit},
volume = {120},
issn = {0021-8979, 1089-7550},
url = {http://scitation.aip.org/content/aip/journal/jap/120/16/10.1063/1.4965861},
doi = {10.1063/1.4965861},
abstract = {Quantum interference effects and electron-electron interactions are found to play an important role in two-dimensional (2D) bulk transport of topological insulator (TI) thin films, which were previously considered as 2D electron gas (2DEG) and explained on basis of Hikami-Larkin-Nagaoka formula and Lee-Ramakrishnan theory. The distinct massive Dirac-type band structure of the TI bulk state gives rise to quantum corrections to conductivity due to interference and interaction effects, which are quite different from that of a 2DEG. We interpret the experimental findings employing Lu-Shen theory particularly derived for the TI system in the 2D limit. The surface and the bulk conductions are identified based on slopes of logarithmic temperature-dependent conductivities with magnetic fields. The perpendicular field magnetoresistance is analyzed considering suppression of weak antilocalization/localization of the surface/bulk electrons by the applied field. We propose corresponding theoretical models to explain the parallel and tilted field magnetoresistance. The effect of the band structure is found to be crucial for an accurate explanation of the magnetotransport results in the TI thin film.},
number = {16},
urldate = {2016-11-04},
journal = {Journal of Applied Physics},
author = {Dey, Rik and Roy, Anupam and Pramanik, Tanmoy and Guchhait, Samaresh and Sonde, Sushant and Rai, Amritesh and Register, Leonard F. and Banerjee, Sanjay K.},
month = oct,
year = {2016},
keywords = {Band structure, Magnetic fields, Magnetic films, Magnetoresistance, Surface states},
pages = {164301}
}
@article{fallahazad_shubnikov-haas_2016,
title = {Shubnikov-de {Haas} {Oscillations} of {High}-{Mobility} {Holes} in {Monolayer} and {Bilayer} {WSe2}: {Landau} {Level} {Degeneracy}, {Effective} {Mass}, and {Negative} {Compressibility}},
volume = {116},
shorttitle = {Shubnikov{\textbackslash}char21\{\}de {Haas} {Oscillations} of {High}-{Mobility} {Holes} in {Monolayer} and {Bilayer} \$\{{\textbackslash}mathrm\{{WSe}\}\}\_\{2\}\$},
url = {http://link.aps.org/doi/10.1103/PhysRevLett.116.086601},
doi = {10.1103/PhysRevLett.116.086601},
abstract = {We study the magnetotransport properties of high-mobility holes in monolayer and bilayer WSe2, which display well defined Shubnikov–de Haas (SdH) oscillations, and quantum Hall states in high magnetic fields. In both mono- and bilayer WSe2, the SdH oscillations and the quantum Hall states occur predominantly at even filling factors, evincing a twofold Landau level degeneracy. The Fourier transform analysis of the SdH oscillations in bilayer WSe2 reveals the presence of two subbands localized in the top or the bottom layer, as well as negative compressibility. From the temperature dependence of the SdH oscillations we determine a hole effective mass of 0.45m0 for both mono- and bilayer WSe2.},
number = {8},
urldate = {2016-03-21},
journal = {Physical Review Letters},
author = {Fallahazad, Babak and Movva, Hema C. P. and Kim, Kyounghwan and Larentis, Stefano and Taniguchi, Takashi and Watanabe, Kenji and Banerjee, Sanjay K. and Tutuc, Emanuel},
month = feb,
year = {2016},
pages = {086601}
}
@article{ghosh_voltage-controlled_2016,
title = {Voltage-controlled low-energy switching of nanomagnets through {Ruderman}-{Kittel}-{Kasuya}-{Yosida} interactions for magnetoelectric device applications},
volume = {120},
issn = {0021-8979, 1089-7550},
url = {http://scitation.aip.org/content/aip/journal/jap/120/3/10.1063/1.4959089},
doi = {10.1063/1.4959089},
abstract = {In this article, we consider through simulation low-energy switching of nanomagnets via electrostatically gated inter-magnet Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions on the surface of three-dimensional topological insulators, for possible memory and nonvolatile logic applications. We model the possibility and dynamics of RKKY-based switching of one nanomagnet by coupling to one or more nanomagnets of set orientation. Potential applications to both memory and nonvolatile logic are illustrated. Sub-attojoule switching energies, far below conventional spin transfer torque (STT)-based memories and even below CMOS logic appear possible. Switching times on the order of a few nanoseconds, comparable to times for STT switching, are estimated for ferromagnetic nanomagnets, but the approach also appears compatible with the use of antiferromagnets which may allow for faster switching.},
number = {3},
urldate = {2016-07-27},
journal = {Journal of Applied Physics},
author = {Ghosh, Bahniman and Dey, Rik and Register, Leonard F. and Banerjee, Sanjay K.},
month = jul,
year = {2016},
keywords = {Antiferromagnetism, Ferromagnetism, Insulator surfaces, Magnets, Nanoelectronic devices},
pages = {034303}
}
@article{ghosh_large_2016,
title = {Large area chemical vapor deposition growth of monolayer {MoSe}2 and its controlled sulfurization to {MoS}2},
volume = {31},
issn = {2044-5326},
url = {http://journals.cambridge.org/article_S0884291416000078},
doi = {10.1557/jmr.2016.7},
abstract = {Layered transition metal dichalcogenides which are part of the two dimensional materials family are experiencing rapidly growing interest owing to their diverse physical and optoelectronic properties. Large area controllable synthesis of these materials is required for transition from lab scale research to practical applications. In this work, we present a single step chemical vapor deposition process for large area monolayer growth of molybdenum selenide (MoSe2). We also demonstrate controllable thermal conversion from molybdenum selenide to molybdenum sulfide.},
number = {07},
urldate = {2016-08-02},
journal = {Journal of Materials Research},
author = {Ghosh, Rudresh and Kim, Joon-Seok and Roy, Anupam and Chou, Harry and Vu, Mary and Banerjee, Sanjay K. and Akinwande, Deji},
month = apr,
year = {2016},
pages = {917--922}
}
@article{hsu_novel_2016,
title = {Novel {BF}+ {Implantation} for {High} {Performance} {Ge} {pMOSFETs}},
volume = {37},
issn = {0741-3106},
doi = {10.1109/LED.2016.2578327},
abstract = {BF+ implantation is used for the first time for the formation of source/drain (S/D) junctions in Ge MOSFETs. It offers a higher B activation level ( cm and a shallower junction depth in Ge compared with B+ and BF2+ implantation for the same projected range, after rapid thermal annealing at 800 °C. Germanium pMOSFETs using BF+ implantation demonstrate a high ON/OFF ratio of and an enhancement of ON current, due to the reduction of S/D series resistance compared with B+ or BF2+ implanted junctions.},
number = {8},
journal = {IEEE Electron Device Letters},
author = {Hsu, W. and Kim, T. and Chou, H. and Rai, A. and Banerjee, S. K.},
month = aug,
year = {2016},
keywords = {annealing, BF+ implantation, Dopant activation, Ge PMOSFET, Implants, Junctions, MOSFET, Resistance, S/D sheet resistance, Silicon, Thermal stability},
pages = {954--957}
}
@article{hsu_diffusion_2016,
title = {Diffusion and recrystallization of {B} implanted in crystalline and pre-amorphized {Ge} in the presence of {F}},
volume = {120},
issn = {0021-8979, 1089-7550},
url = {http://scitation.aip.org/content/aip/journal/jap/120/1/10.1063/1.4955312},
doi = {10.1063/1.4955312},
abstract = {Although the diffusion control and dopant activation of Ge p-type junctions are straightforward when using B+ implantation, the use of the heavier BF2 + ions or even BF+ is still favored in terms of shallow junction formation and throughput—because implants can be done at higher energies, which can give higher beam currents and beam stability—and thus the understanding of the effect of F co-doping becomes important. In this work, we have investigated diffusion and end-of-range (EOR) defect formation for B+, BF+, and BF2 + implants in crystalline and pre-amorphized Ge, employing rapid thermal annealing at 600 °C and 800 °C for 10 s. It is demonstrated that the diffusion of B is strongly influenced by the temperature, the presence of F, and the depth of amorphous/crystalline interface. The B and F diffusion profiles suggest the formation of B–F complexes and enhanced diffusion by interaction with point defects. In addition, the strong chemical effect of F is found only for B in Ge, while such an effect is vanishingly small for samples implanted with F alone, or co-implanted with P and F, as evidenced by the high residual F concentration in the B-doped samples after annealing. After 600 °C annealing for 10 s, interstitial-induced compressive strain was still observed in the EOR region for the sample implanted with BF+, as measured by X-ray diffraction. Further analysis by cross-sectional transmission electron microscopy showed that the \{311\} interstitial clusters are the majority type of EOR defects. The impact of these \{311\} defects on the electrical performance of Ge p+/n junctions formed by BF+ implantation was evaluated.},
number = {1},
urldate = {2016-07-27},
journal = {Journal of Applied Physics},
author = {Hsu, William and Kim, Taegon and Benitez-Lara, Alfredo and Chou, Harry and Dolocan, Andrei and Rai, Amritesh and Arellano-Jimenez, M. Josefina and Palard, Marylene and Jose-Yacaman, Miguel and Banerjee, Sanjay K.},
month = jul,
year = {2016},
keywords = {Elemental semiconductors, Germanium, Interstitial defects, Ion implantation, X-ray diffraction},
pages = {015701}
}
@article{hsu_high_2016,
title = {High {Phosphorus} {Dopant} {Activation} in {Germanium} {Using} {Laser} {Spike} {Annealing}},
volume = {37},
issn = {0741-3106, 1558-0563},
url = {http://ieeexplore.ieee.org/document/7505908/},
doi = {10.1109/LED.2016.2587829},
number = {9},
urldate = {2016-11-04},
journal = {IEEE Electron Device Letters},
author = {Hsu, William and Wang, Xiaoru and Wen, Feng and Wang, Yun and Dolocan, Andrei and Kim, Taegon and Tutuc, Emanuel and Banerjee, Sanjay K.},
month = sep,
year = {2016},
pages = {1088--1091}
}
@article{kang_influence_2016,
title = {Influence of electron-beam lithography exposure current level on the transport characteristics of graphene field effect transistors},
volume = {119},
issn = {0021-8979, 1089-7550},
url = {http://scitation.aip.org/content/aip/journal/jap/119/12/10.1063/1.4944599},
doi = {10.1063/1.4944599},
abstract = {Many factors have been identified to influence the electrical transport characteristics of graphenefield-effect transistors. In this report, we examine the influence of the exposure current level used during electron beam lithography (EBL) for active region patterning. In the presence of a self-assembled hydrophobic residual layer generated by oxygen plasma etching covering the top surface of the graphene channel, we show that the use of low EBL current level results in higher mobility, lower residual carrier density, and charge neutrality point closer to 0 V, with reduced device-to-device variations. We show that this correlation originates from the resist heating dependent release of radicals from the resist material, near its interface with graphene, and its subsequent trapping by the hydrophobic polymer layer. Using a general model for resist heating, we calculate the difference in resist heating for different EBL current levels. We further corroborate our argument through control experiments, where radicals are either intentionally added or removed by other processes. We also utilize this finding to obtain mobilities in excess of 18 000 cm2/V s on silicon dioxide substrates. We believe these results are applicable to other 2D materials such as transition metal dichalcogenides and nanoscale devices in general.},
number = {12},
urldate = {2016-03-28},
journal = {Journal of Applied Physics},
author = {Kang, Sangwoo and Movva, Hema C. P. and Sanne, Atresh and Rai, Amritesh and Banerjee, Sanjay K.},
month = mar,
year = {2016},
keywords = {Electrical resistivity, Electric currents, Electron beams, Field effect transistors, graphene},
pages = {124502}
}
@article{kang_effects_2016,
title = {Effects of {Electrode} {Layer} {Band} {Structure} on the {Performance} of {Multilayer} {Graphene}–{hBN}–{Graphene} {Interlayer} {Tunnel} {Field} {Effect} {Transistors}},
issn = {1530-6984},
url = {http://dx.doi.org/10.1021/acs.nanolett.6b01646},
doi = {10.1021/acs.nanolett.6b01646},
abstract = {Interlayer tunnel field-effect transistors based on graphene and hexagonal boron nitride (hBN) have recently attracted much interest for their potential as beyond-CMOS devices. Using a recently developed method for fabricating rotationally aligned two-dimensional heterostructures, we show experimental results for devices with varying thicknesses and stacking order of the graphene electrode layers and also model the current–voltage behavior. We show that an increase in the graphene layer thickness results in narrower resonance. However, due to a simultaneous increase in the number of sub-bands and decrease of sub-band separation with an increase in thickness, the negative differential resistance peaks becomes less prominent and do not appear for certain conditions at room temperature. Also, we show that due to the unique band structure of odd number of layer Bernal-stacked graphene, the number of closely spaced resonance conditions increase, causing interference between neighboring resonance peaks. Although this can be avoided with even number of layer graphene, we find that in this case the bandgap opening present at high biases tend to broaden the resonance peaks.},
urldate = {2016-07-27},
volume = {16},
number={8},
journal = {Nano Letters},
author = {Kang, Sangwoo and Prasad, Nitin and Movva, Hema C. P. and Rai, Amritesh and Kim, Kyounghwan and Mou, Xuehao and Taniguchi, Takashi and Watanabe, Kenji and Register, Leonard F. and Tutuc, Emanuel and Banerjee, Sanjay K.},
month = jul,
year = {2016},
pages={4975--4981}
}
@article{kim_van_2016,
title = {van der {Waals} {Heterostructures} with {High} {Accuracy} {Rotational} {Alignment}},
volume = {16},
issn = {1530-6984},
url = {http://dx.doi.org/10.1021/acs.nanolett.5b05263},
doi = {10.1021/acs.nanolett.5b05263},
abstract = {We describe the realization of van der Waals (vdW) heterostructures with accurate rotational alignment of individual layer crystal axes. We illustrate the approach by demonstrating a Bernal-stacked bilayer graphene formed using successive transfers of monolayer graphene flakes. The Raman spectra of this artificial bilayer graphene possess a wide 2D band, which is best fit by four Lorentzians, consistent with Bernal stacking. Scanning tunneling microscopy reveals no moiré pattern on the artificial bilayer graphene, and tunneling spectroscopy as a function of gate voltage reveals a constant density of states, also in agreement with Bernal stacking. In addition, electron transport probed in dual-gated samples reveals a band gap opening as a function of transverse electric field. To illustrate the applicability of this technique to realize vdW heterostructuctures in which the functionality is critically dependent on rotational alignment, we demonstrate resonant tunneling double bilayer graphene heterostructures separated by hexagonal boron-nitride dielectric.},
number = {3},
urldate = {2016-03-21},
journal = {Nano Letters},
author = {Kim, Kyounghwan and Yankowitz, Matthew and Fallahazad, Babak and Kang, Sangwoo and Movva, Hema C. P. and Huang, Shengqiang and Larentis, Stefano and Corbet, Chris M. and Taniguchi, Takashi and Watanabe, Kenji and Banerjee, Sanjay K. and LeRoy, Brian J. and Tutuc, Emanuel},
month = mar,
year = {2016},
pages = {1989--1995}
}
@article{kummel_invited_2016,
title = {({Invited}) {Phthalocyanine} {Monolayer} {Nucleation} of {Gate} {Oxide} {ALD} on {Single} {Layer} {Graphene} and {TMD} {Surfaces}},
volume = {MA2016-01},
issn = {2151-2041, 2151-2043},
url = {http://ma.ecsdl.org/content/MA2016-01/13/844},
language = {en},
number = {13},
urldate = {2016-08-02},
journal = {ECS Meeting Abstracts},
author = {Kummel, Andrew and Park, Jun Hong and Kwak, Iljo and Chagarov, Evgeniy and Movva, Hema and Chou, Harry and Banerjee, Sanjay K. and Fathipour, Sara and Seabaugh, Alan and Fullerton, Susan and Vishwanath, Suresh and Xing, Huili Grace and Choudhury, Pabitra},
month = apr,
year = {2016},
pages = {844--844}
}
@article{majumder_large_2016,
title = {Large {Magnetoresistance} at {Room} {Temperature} in {Ferromagnet} - {Topological} {Insulator} {Contacts}},
volume = {15},
issn = {1536-125X},
doi = {10.1109/TNANO.2016.2572003},
abstract = {We report magnetoresistance for current flow through iron/topological insulator (Fe/TI) and Fe/evaporated-oxide/TI contacts when a magnetic field is used to initially orient the magnetic alignment of the incorporated ferromagnetic Fe bar, at temperatures ranging from 100 K to room temperature. This magnetoresistance is associated with the relative orientation of the Fe bar magnetization and spin-polarization of electrons moving on the surface of the TI with helical spin-momentum locking. The magnitude of the observed magnetoresistance is relatively large compared to that observed in prior work.},
number = {4},
journal = {IEEE Transactions on Nanotechnology},
author = {Majumder, S. and Guchhait, S. and Dey, R. and Register, L. F. and Banerjee, S. K.},
month = jul,
year = {2016},
keywords = {Current measurement, Gold, Iron, Magnetization, Magnetoresistance, room temperature, spin, Temperature distribution, Temperature measurement, topological insulator},
pages = {671--674}
}
@article{mccreary_effects_2016,
title = {Effects of {Uniaxial} and {Biaxial} {Strain} on {Few}-{Layered} {Terrace} {Structures} of {MoS}2 {Grown} by {Vapor} {Transport}},
volume = {10},
issn = {1936-0851},
url = {http://dx.doi.org/10.1021/acsnano.5b04550},
doi = {10.1021/acsnano.5b04550},
abstract = {One of the most fascinating properties of molybdenum disulfide (MoS2) is its ability to be subjected to large amounts of strain without experiencing degradation. The potential of MoS2 mono- and few-layers in electronics, optoelectronics, and flexible devices requires the fundamental understanding of their properties as a function of strain. While previous reports have studied mechanically exfoliated flakes, tensile strain experiments on chemical vapor deposition (CVD)-grown few-layered MoS2 have not been examined hitherto, although CVD is a state of the art synthesis technique with clear potential for scale-up processes. In this report, we used CVD-grown terrace MoS2 layers to study how the number and size of the layers affected the physical properties under uniaxial and biaxial tensile strain. Interestingly, we observed significant shifts in both the Raman in-plane mode (as high as ?5.2 cm?1) and photoluminescence (PL) energy (as high as ?88 meV) for the few-layered MoS2 under ?1.5\% applied uniaxial tensile strain when compared to monolayers and few-layers of MoS2 studied previously. We also observed slippage between the layers which resulted in a hysteresis of the Raman and PL spectra during further applications of strain. Through DFT calculations, we contended that this random layer slippage was due to defects present in CVD-grown materials. This work demonstrates that CVD-grown few-layered MoS2 is a realistic, exciting material for tuning its properties under tensile strain.},
number = {3},
urldate = {2016-03-21},
journal = {ACS Nano},
author = {McCreary, Amber and Ghosh, Rudresh and Amani, Matin and Wang, Jin and Duerloo, Karel-Alexander N. and Sharma, Ankit and Jarvis, Karalee and Reed, Evan J. and Dongare, Avinash M. and Banerjee, Sanjay K. and Terrones, Mauricio and Namburu, Raju R. and Dubey, Madan},
month = feb,
year = {2016},
pages = {3186--3197}
}
@inproceedings{movva_room_2016,
title = {Room temperature gate-tunable negative differential resistance in {MoS}2/{hBN}/{WSe}2 heterostructures},
isbn = {978-1-5090-2828-3},
url = {http://ieeexplore.ieee.org/document/7548486/},
doi = {10.1109/DRC.2016.7548486},
urldate = {2016-11-04},
booktitle = {2016 74th {Device} {Research} {Conference} ({DRC})},
publisher = {IEEE},
author = {Movva, Hema C. P. and Kang, Sangwoo and Rai, Amritesh and Kim, Kyounghwan and Fallahazad, Babak and Taniguchi, Takashi and Watanabe, Kenji and Tutuc, Emanuel and Banerjee, Sanjay K.},
month = jun,
year = {2016},
pages = {1--2}
}
@article{roy_structural_2016,
title = {Structural and {Electrical} {Properties} of {MoTe}2 and {MoSe}2 {Grown} by {Molecular} {Beam} {Epitaxy}},
volume = {8},
issn = {1944-8244},
url = {http://dx.doi.org/10.1021/acsami.6b00961},
doi = {10.1021/acsami.6b00961},
abstract = {We demonstrate the growth of thin films of molybdenum ditelluride and molybdenum diselenide on sapphire substrates by molecular beam epitaxy. In situ structural and chemical analyses reveal stoichiometric layered film growth with atomically smooth surface morphologies. Film growth along the (001) direction is confirmed by X-ray diffraction, and the crystalline nature of growth in the 2H phase is evident from Raman spectroscopy. Transmission electron microscopy is used to confirm the layered film structure and hexagonal arrangement of surface atoms. Temperature-dependent electrical measurements show an insulating behavior that agrees well with a two-dimensional variable-range hopping model, suggesting that transport in these films is dominated by localized charge-carrier states.},
number = {11},
urldate = {2016-03-28},
journal = {ACS Applied Materials \& Interfaces},
author = {Roy, Anupam and Movva, Hema C. P. and Satpati, Biswarup and Kim, Kyounghwan and Dey, Rik and Rai, Amritesh and Pramanik, Tanmoy and Guchhait, Samaresh and Tutuc, Emanuel and Banerjee, Sanjay K.},
month = mar,
year = {2016},
pages = {7396--7402}
}
@article{roy_write_2016,
title = {Write {Error} {Rate} of {Spin}-{Transfer}-{Torque} {Random} {Access} {Memory} {Including} {Micromagnetic} {Effects} {Using} {Rare} {Event} {Enhancement}},
volume = {PP},
issn = {0018-9464},
doi = {10.1109/TMAG.2016.2580532},
abstract = {Spin-transfer-torque random access memory (STT-RAM) is a promising candidate for the next-generation of random access memory due to improved scalability, read-write speeds and endurance. However, the write pulse duration must be long enough to ensure a low write error rate (WER), the probability that a bit will remain unswitched after the write pulse is turned off, in the presence of stochastic thermal effects. WERs on the scale of or lower are desired. Within a macrospin approximation, WERs can be calculated analytically using the Fokker-Planck method to this point and beyond. However, dynamic micromagnetic effects within the bit can affect and lead to faster switching. Such micromagnetic effects can be addressed via numerical solution of the stochastic Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation. However, determining WERs approaching would require well over such independent simulations, which is infeasible. In this work, we explore calculation of WER using “rare event enhancement” (REE), an approach that has been used for Monte Carlo simulation of other systems where rare events nevertheless remain important. Using a prototype REE approach tailored to the STT-RAM switching physics, we demonstrate reliable calculation of a WER to with sets of only approximately ongoing stochastic LLGS simulations, and the apparent ability to go further.},
number = {99},
journal = {IEEE Transactions on Magnetics},
author = {Roy, U. and Pramanik, T. and Register, L. F. and Banerjee, S. K.},
year = {2016},
keywords = {Computational modeling, Magnetization, Mathematical model, micromagnetic, micromagnetics, Prototypes, rare event enhancement, Spin-transfer-torque, Switches, Trajectory, write error rate},
pages = {1--1}
}
@article{trivedi_weak_2016,
title = {Weak antilocalization and universal conductance fluctuations in bismuth telluro-sulfide topological insulators},
volume = {119},
issn = {0021-8979, 1089-7550},
url = {http://scitation.aip.org/content/aip/journal/jap/119/5/10.1063/1.4941265},
doi = {10.1063/1.4941265},
abstract = {We report on van der Waals epitaxialgrowth,materials characterization, and magnetotransport experiments in crystalline nanosheets of Bismuth Telluro-Sulfide (BTS). Highly layered, good-quality crystalline nanosheets of BTS are obtained on SiO2 and muscovite mica. Weak-antilocalization (WAL), electron-electron interaction-driven insulating ground state and universal conductance fluctuations are observed in magnetotransport experiments on BTS devices. Temperature, thickness, and magnetic field dependence of the transport data indicate the presence of two-dimensional surface states along with bulk conduction, in agreement with theoretical models. An extended-WAL model is proposed and utilized in conjunction with a two-channel conduction model to analyze the data, revealing a surface component and evidence of multiple conducting channels. A facile growth method and detailed magnetotransport results indicating BTS as an alternative topological insulator material system are presented.},
number = {5},
urldate = {2016-02-12},
journal = {Journal of Applied Physics},
author = {Trivedi, Tanuj and Sonde, Sushant and Movva, Hema C. P. and Banerjee, Sanjay K.},
month = feb,
year = {2016},
keywords = {Computer modeling, Epitaxy, Magnetoresistance, Nanosheets, Surface states},
pages = {055706}
}
@article{valsaraj_dft_2016,
title = {{DFT} simulations of inter-graphene-layer coupling with rotationally misaligned {hBN} tunnel barriers in graphene/{hBN}/graphene tunnel {FETs}},
volume = {120},
issn = {0021-8979, 1089-7550},
url = {http://scitation.aip.org/content/aip/journal/jap/120/13/10.1063/1.4964115},
doi = {10.1063/1.4964115},
abstract = {Van der Waal\'s heterostructures allow for novel devices such as two-dimensional-to-two-dimensional tunnel devices, exemplified by interlayer tunnel FETs. These devices employ channel/tunnel-barrier/channel geometries. However, during layer-by-layer exfoliation of these multi-layer materials, rotational misalignment is the norm and may substantially affect device characteristics. In this work, by using density functional theory methods, we consider a reduction in tunneling due to weakened coupling across the rotationally misaligned interface between the channel layers and the tunnel barrier. As a prototypical system, we simulate the effects of rotational misalignment of the tunnel barrier layer between aligned channel layers in a graphene/hBN/graphene system. We find that the rotational misalignment between the channel layers and the tunnel barrier in this van der Waal\'s heterostructure can significantly reduce coupling between the channels by reducing, specifically, coupling across the interface between the channels and the tunnel barrier. This weakened coupling in graphene/hBN/graphene with hBN misalignment may be relevant to all such van der Waal\'s heterostructures.},
number = {13},
urldate = {2016-11-04},
journal = {Journal of Applied Physics},
author = {Valsaraj, Amithraj and Register, Leonard F. and Tutuc, Emanuel and Banerjee, Sanjay K.},
month = oct,
year = {2016},
keywords = {Band structure, Density functional theory, Dirac equation, graphene, Heterojunctions},
pages = {134310}
}
@inproceedings{wu_full-band_2016,
title = {Full-band simulations of single-particle resonant tunneling in transition metal dichalcogenide-based interlayer tunneling field-effect transistors},
isbn = {978-1-5090-0818-6},
url = {http://ieeexplore.ieee.org/document/7605155/},
doi = {10.1109/SISPAD.2016.7605155},
urldate = {2016-11-04},
booktitle = {2016 {Simulation} of {Semiconductor} {Processes} and {Devices} ({SISPAD})},
publisher = {IEEE},
author = {Wu, Xian and Mou, Xuehao and Register, Leonard F. and Banerjee, Sanjay K.},
month = sep,
year = {2016},
pages = {89--92}
}
@inproceedings{yogeesh_towards_2016,
title = {Towards wafer scale monolayer {MoS}2 based flexible low-power {RF} electronics for {IoT} systems},
isbn = {978-1-5090-2828-3},
url = {http://ieeexplore.ieee.org/document/7548483/},
doi = {10.1109/DRC.2016.7548483},
urldate = {2016-11-04},
booktitle = {2016 74th {Device} {Research} {Conference} ({DRC})},
publisher = {IEEE},
author = {Yogeesh, Maruthi and Chang, Hsiao-Yu and Li, Wei and Rahimi, Somayyeh and Rai, Amritesh and Sanne, Atresh and Ghosh, Rudresh and Banerjee, Sanjay K and Akinwande, Deji},
month = jun,
year = {2016},
pages = {1--2}
}
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