Emerging Memories

With the advent of new material systems and the ease of fabrication of heterostructure devices, novel memory devices based on emergent physical phenomena are an intense focus of current research. Our research explores emerging memories based on spin-transfer torque (STT-RAM) and resistive switching (RRAM). Both conventional STT-RAM devices using magnetic metals and tunnel oxides, as well as novel topological-insulator (TI) based devices are being investigated. Cerium and Hafnium oxide based RRAM devices are also being explored for non-volative memory applications, and for potential in neuromorphic computing.

Recent Publications:

• Tanmoy Pramanik, Anupam Roy, Rik Dey, Amritesh Rai, Samaresh Guchhait, Hema C.P. Movva, Cheng-Chih Hsieh, and Sanjay K. Banerjee. Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy. Journal of Magnetism and Magnetic Materials, 437:72--77, September 2017. [DOI | http ]
• Bahniman Ghosh, Rik Dey, Leonard F. Register, and Sanjay K. Banerjee. A simulation study of voltage-assisted low-energy switching of a perpendicular anisotropy ferromagnet on a topological insulator. Journal of Computational Electronics, 16(1):120--126, March 2017. [DOI | http ]
• Cheng-Chih Hsieh, Anupam Roy, Yao-Feng Chang, Davood Shahrjerdi, and Sanjay K. Banerjee. A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems. Applied Physics Letters, 109(22):223501, November 2016. [DOI | http ]
• Bahniman Ghosh, Rik Dey, Leonard F. Register, and Sanjay K. Banerjee. Voltage-controlled low-energy switching of nanomagnets through Ruderman-Kittel-Kasuya-Yosida interactions for magnetoelectric device applications. Journal of Applied Physics, 120(3):034303, July 2016. [DOI | http ]
• Aqyan A. Bhatti, Cheng-Chih Hsieh, Anupam Roy, Leonard F. Register, and Sanjay K. Banerjee. First-principles simulation of oxygen vacancy migration in HfOx, CeOx, and at their interfaces for applications in resistive random-access memories. Journal of Computational Electronics, pages 1--8, June 2016. [DOI | http ]
• U. Roy, T. Pramanik, L. F. Register, and S. K. Banerjee. Write Error Rate of Spin-Transfer-Torque Random Access Memory Including Micromagnetic Effects Using Rare Event Enhancement. IEEE Transactions on Magnetics, PP(99):1-1, June 2016. [DOI ]
• T. Pramanik, U. Roy, L.F. Register, and S.K. Banerjee. Proposal of a Multistate Memory Using Voltage Controlled Magnetic Anisotropy of a Cross-Shaped Ferromagnet. IEEE Transactions on Nanotechnology, 14(5):883-888, September 2015. [ DOI ]
• Urmimala Roy, Rik Dey, Tanmoy Pramanik, Bahniman Ghosh, Leonard F. Register, and Sanjay K. Banerjee. Magnetization switching of a metallic nanomagnet via current-induced surface spin-polarization of an underlying topological insulator. Journal of Applied Physics, 117(16):163906, April 2015. [ DOI | http ]
• Cheng-Chih Hsieh, Anupam Roy, Amritesh Rai, Yao-Feng Chang, and Sanjay K. Banerjee. Characteristics and mechanism study of cerium oxide based random access memories. Applied Physics Letters, 106(17):173108, April 2015. [ DOI | http ]
• Tanmoy Pramanik, Urmimala Roy, Maxim Tsoi, Leonard F. Register, and Sanjay K. Banerjee. Micromagnetic simulations of spin-wave normal modes and the spin-transfer-torque driven magnetization dynamics of a ferromagnetic cross. Journal of Applied Physics, 115(17):17D123, May 2014. [ DOI | http ]
• Urmimala Roy, Tanmoy Pramanik, Maxim Tsoi, Leonard F. Register, and Sanjay K. Banerjee. Micromagnetic study of spin-transfer-torque switching of a ferromagnetic cross towards multi-state spin-transfer-torque based random access memory. Journal of Applied Physics, 113(22):223904, June 2013. [ DOI | http ]
• Tackhwi Lee and Sanjay K. Banerjee. Device characteristics of HfON charge-trap layer nonvolatile memory. Journal of Vacuum Science & Technology B, 28(5):1005-1010, September 2010. [ DOI | http ]