Intra-domain periodic defects in monolayer MoS2
Graphene-Al2O3-Si heterojunction solar cells on flexible Si substrates
Novel BF+ implantation for high-performance Ge pMOSFETs
Analog memristive synaptic device for energy-efficient spike-based computing
Influence of EBL exposure current on the
transport characteristics of graphene FETs
Structural and electrical properties of
MoTe2, MoSe2 grown by MBE
Doping enhancement of compound
semiconductors (InGaAs) via solid source dopant
Large area CVD growth of monolayer MoSe2
and its controlled sulfurization to MoS2
QW MOSFETs with BeO and BeO/HfO2
as gate dielectric and interfacial layer
van der Waals epitaxy and magnetotransport
in Bi2Te2-xSx topological insulators
Ultrathin ReS2 FETs
Room temperature NDR in encapsulated
Graphene - hBN - Graphene TFETs
p-type Ohmic contacts in
high-mobility dual-gated WSe2 FETs
High performance Ge pMOSFET
using novel BF implantation
CVD growth optimization of MoS2
Perpendicular Magnetic Anisotropy and
Spin Glass-like Behavior in MBE Cr2Te3
Planar chemistry of 2D
heterostructures at the atomic level
MBE and PVD CeOx based resistive
random access memories (RRAM)
Effect of TiOx doping on MoS2 bandstructure
Research @ BanerjeeLab
We conduct research in diverse fields at the intersection of electrical engineering, solid-state devices and nanomaterials. We utilize micro and nanofabrication techniques, along with material growth & synthesis and computational techniques to design novel electronic and spintronic devices with applications in logic, memory, photovoltaics and on-chip electronics. We strive to explore different aspects in our research: fundamental device physics, material growth and properties optimization, novel fabrication technology and device applications. Click on the showcased projects to learn more.